Electron drift velocities in In0.53Ga0.47As at very high electric fields

1981 ◽  
Author(s):  
T.H. Windhorn ◽  
L.W. Cook ◽  
G.E. Stillman
Keyword(s):  
Electric Fields ◽  
Electron Drift ◽  
High Electric Fields ◽  
Very High

High Field Electron Drift in a-Si:H

1993 ◽  
Vol 297 ◽  
Author(s):  
Qing Gu ◽  
Eric A. Schiff ◽  
Jean Baptiste Chevrier ◽  
Bernard Equer
Keyword(s):  
Electric Fields ◽  
High Field ◽  
Drift Mobility ◽  
Time Range ◽  
Electron Drift ◽  
Parameter Change ◽  
Transient Photocurrent ◽  
Field Mobility ◽  
High Electric Fields ◽  
Electron Drift Mobility

We have measured the electron drift mobility in a-Si:H at high electric fields (E ≤ 3.6 x 105 V%cm). The a-Si:Hpin structure was prepared at Palaiseau, and incorporated a thickp+ layer to retard high field breakdown. The drift mobility was obtained from transient photocurrent measurements from 1 ns - 1 ms following a laser pulse. Mobility increases as large as a factor of 30 were observed; at 77 K the high field mobility de¬pended exponentially upon field (exp(E/Eu), where E u= 1.1 x 105 V%cm). The same field dependence was observed in the time range 10 ns – 1 μs, indicating that the dispersion parameter change with field was negligible. This latter result appears to exclude hopping in the exponential conduction bandtail as the fundamental transport mechanism in a-Si:H above 77 K; alternate models are briefly discussed.

scholarly journals Nanosecond air breakdown parameters for electron and microwave beam propagation

1988 ◽  
Vol 6 (1) ◽  
pp. 105-117 ◽  
Author(s):  
A. W. Ali
Keyword(s):  
Electric Fields ◽  
Drift Velocity ◽  
Collision Frequency ◽  
Short Pulse ◽  
Microwave Beam ◽  
Avalanche Ionization ◽  
Air Breakdown ◽  
High Electric Fields ◽  
Ionization Frequency ◽  
Very High

Air breakdown by avalanche ionization plays an important role in the electron beam and microwave propagations. For high electric fields and short pulse applications one needs avalanche ionization parameters for modeling and scaling of experimental devices. However, the breakdown parameters, i.e., the ionization frequency vs E/p (volt. cm−1. Torr−1) in air is uncertain for very high values of E/P. We review the experimental data for the electron drift velocity, the Townsend ionization coefficient in N2 and O2 and develop the ionization frequency and the collision frequency for momentum transfer in air. We construct the E/p vs Pτ diagram and show that our results are in better agreement with the most recent short pulse air breakdown experiments, compared to those predicted by the expression of Felsenthal & Proud (1965). This is because they extrapolate an expression for the drift velocity, linear in E/p, to high values of E/p. Experimentally the drift velocity varies as (E/p)½ in the region of E/p > 100.

Electron velocity in Si and GaAs at very high electric fields

1980 ◽  
Vol 37 (9) ◽  
pp. 797-798 ◽  
Author(s):  
P. M. Smith ◽  
M. Inoue ◽  
Jeffrey Frey
Keyword(s):  
Electric Fields ◽  
Electron Velocity ◽  
High Electric Fields ◽  
Very High

scholarly journals Reducing leakage current and dielectric losses of electroactive polymers through electro-annealing for high-voltage actuation

RSC Advances ◽  
2019 ◽  
Vol 9 (23) ◽  
pp. 12823-12835 ◽  
Author(s):  
Francesco Pedroli ◽  
Alessio Marrani ◽  
Minh-Quyen Le ◽  
Olivier Sanseau ◽  
Pierre-Jean Cottinet ◽  
...  
Keyword(s):  
Leakage Current ◽  
Electric Fields ◽  
High Voltage ◽  
Electroactive Polymers ◽  
Dielectric Losses ◽  
High Electric Fields ◽  
Very High

The electro-annealed polymer, the E-TH sample, shows a reduction in leakage current of 80% for very high electric fields.

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