Electron transient response and impact-ionized plasma instability in GaAs at very high electric fields

1985 ◽  
Vol 28 (8) ◽  
pp. 799-805 ◽  
Author(s):  
R. Mickevičius ◽  
A. Reklaitis
Keyword(s):  
Electric Fields ◽  
Transient Response ◽  
Plasma Instability ◽  
High Electric Fields ◽  
Very High

scholarly journals Nanosecond air breakdown parameters for electron and microwave beam propagation

1988 ◽  
Vol 6 (1) ◽  
pp. 105-117 ◽  
Author(s):  
A. W. Ali
Keyword(s):  
Electric Fields ◽  
Drift Velocity ◽  
Collision Frequency ◽  
Short Pulse ◽  
Microwave Beam ◽  
Avalanche Ionization ◽  
Air Breakdown ◽  
High Electric Fields ◽  
Ionization Frequency ◽  
Very High

Air breakdown by avalanche ionization plays an important role in the electron beam and microwave propagations. For high electric fields and short pulse applications one needs avalanche ionization parameters for modeling and scaling of experimental devices. However, the breakdown parameters, i.e., the ionization frequency vs E/p (volt. cm−1. Torr−1) in air is uncertain for very high values of E/P. We review the experimental data for the electron drift velocity, the Townsend ionization coefficient in N2 and O2 and develop the ionization frequency and the collision frequency for momentum transfer in air. We construct the E/p vs Pτ diagram and show that our results are in better agreement with the most recent short pulse air breakdown experiments, compared to those predicted by the expression of Felsenthal & Proud (1965). This is because they extrapolate an expression for the drift velocity, linear in E/p, to high values of E/p. Experimentally the drift velocity varies as (E/p)½ in the region of E/p > 100.

Electron velocity in Si and GaAs at very high electric fields

1980 ◽  
Vol 37 (9) ◽  
pp. 797-798 ◽  
Author(s):  
P. M. Smith ◽  
M. Inoue ◽  
Jeffrey Frey
Keyword(s):  
Electric Fields ◽  
Electron Velocity ◽  
High Electric Fields ◽  
Very High

scholarly journals Reducing leakage current and dielectric losses of electroactive polymers through electro-annealing for high-voltage actuation

RSC Advances ◽  
2019 ◽  
Vol 9 (23) ◽  
pp. 12823-12835 ◽  
Author(s):  
Francesco Pedroli ◽  
Alessio Marrani ◽  
Minh-Quyen Le ◽  
Olivier Sanseau ◽  
Pierre-Jean Cottinet ◽  
...  
Keyword(s):  
Leakage Current ◽  
Electric Fields ◽  
High Voltage ◽  
Electroactive Polymers ◽  
Dielectric Losses ◽  
High Electric Fields ◽  
Very High

The electro-annealed polymer, the E-TH sample, shows a reduction in leakage current of 80% for very high electric fields.

Features of carriers at very high electric fields in a-Se and a-Si:H

1987 ◽  
Vol 97-98 ◽  
pp. 559-561 ◽  
Author(s):  
Gytis Juška ◽  
Kȩstutis Arlauskas ◽  
Edmundas Montrimas
Keyword(s):  
Electric Fields ◽  
High Electric Fields ◽  
Very High

Moleküldissoziation durch hohe elektrische Felder

1964 ◽  
Vol 19 (1) ◽  
pp. 71-83 ◽  
Author(s):  
H. D. Beckey
Keyword(s):  
Electric Field ◽  
Electric Fields ◽  
Charge Ratio ◽  
Mass Spectrometers ◽  
Basic Model ◽  
Internal Interaction ◽  
High Electric Fields ◽  
Very High ◽  
Field Dissociation ◽  
Positively Charged

It has been shown by different experiments using field ion mass spectrometers that molecules may be dissociated by very high electric fields (several 107 - 108 V/cm) immediately after field ionization. The large variety of field dissociation processes observed in field ion mass spectrometers is treated systematically. This is done by assuming a basic model underlying the effect of field dissociation. The rules derived from the model are confirmed experimentally by the field ion mass spectra of homologous series of organic substances.After derivation of the model it is shown that field dissociation of organic ions is dependent on factors such as: Charge distribution in the molecule rearranged by the electric field, interaction of the positively charged parts of the molecule with the external electric field, internal interaction of the field dissociating parts of the molecule.Each of these main factors in turn is dependent on further factors which will be discussed, the most important ones being the mass to charge ratio and the electronic structure of both the field ionized molecule and the subsequently formed fragments.

Electrical Behavior of Nano-Scaled Interconnects

2004 ◽  
Vol 812 ◽  
Author(s):  
M. Engelhardt ◽  
G. Schindler ◽  
W. Steinhögl ◽  
G. Steinlesberger ◽  
M. Traving
Keyword(s):  
Electric Fields ◽  
Conduction Mechanism ◽  
Stress Tests ◽  
Electrical Measurements ◽  
Wide Range ◽  
Bias Temperature Stress ◽  
High Electric Fields ◽  
Physical Phenomena ◽  
Intermetal Dielectric ◽  
Very High

AbstractSub-lithographic copper damascene lines were fabricated to investigate already today the physical phenomena and scaling limits of metallic conductors in the metallization systems of chip generations which are believed to be in production 10 years from now and later. Using standard manufacturing processes and state-of-the-art process tools, including standard lithography tools, narrow copper lines were fabricated at the expense of a relaxed pitch by use of a removable spacer technique. These copper nano interconnects were passivated and subjected to electrical measurements. Our results show that continuous down scaling to increase device performance will result in an unfavorable increase of the electrical resistivity of copper in stateof-the-art metallization schemes. Electrical measurements over a wide range of temperatures down to cryogenic temperatures reveal the limited potential of cooling to reduce resistivity of conductors as lateral dimensions will be shrinked down to the sub-100nm regime. By down scaling of copper diffusion barriers in damascene trenches, barrier functionality was demonstrated after high temperature anneals and excessive bias-temperature stress tests for films meeting or even exceeding end-of-roadmap thickness requirements. An analysis of the temperature dependence of the leakage current measured at very high electric fields applied between neighboring damascene lines suggests the conduction mechanism in the SiO2 used as intermetal dielectric to be Frenkel-Poole type rather than Schottky emission. Electromigration life times of sub-100nm copper lines embedded in oxide were found to be comparable with those obtained for similar structures fabricated with today's feature sizes.

Sign in / Sign up

Export Citation Format

Share Document