Gate dielectrics for Si, SiC, and GaN as synthesized by jet vapor deposition

2003 ◽  
Vol 34 (5-8) ◽  
pp. 363-370 ◽  
Author(s):  
T.P. Ma
1999 ◽  
Vol 567 ◽  
Author(s):  
T.P. Ma

ABSTRACTThe principle and practice of the Jet-Vapor Deposition (JVD) technique for thin-film deposition will be introduced, followed by a presentation of the properties of ultra-thin JVD silicon nitride (designated SiN in this paper) as advanced MOS gate dielectric. Recent results on the JVD TiO2/SiN gate stack will also be presented


1997 ◽  
Vol 495 ◽  
Author(s):  
J. Veteran ◽  
C. Hobbs ◽  
R. Hegde ◽  
P. Tobin ◽  
V. Wang ◽  
...  

ABSTRACTAs MOSFET dimensions are aggressively scaled, minimizing the thermal budget becomes critical for limiting the diffusion of channel profiles. Unfortunately, high quality dielectrics with low deposition temperatures have not been readily available. Typical room temperature dielectrics are porous and electrically leaky. A promising technique for low temperature dielectric deposition is Jet Vapor Deposition (JVD). [1] Two coaxial quartz nozzles spray the process gases to the substrate surface at super-sonic speeds while a microwave cavity generates a plasma in the nozzle. [2] We have successfully deposited silicon nitride films using SiH4/He and N2/He gas mixtures. These are the first reported JVD results on 200 mm wafers.


1995 ◽  
Vol 382 ◽  
Author(s):  
Rebecca L. Lankey ◽  
L.M. Hsiung ◽  
H.N.G. Wadley ◽  
S.M. Karecki ◽  
D.T. Smith ◽  
...  

ABSTRACTAluminum and copper nanolaminates have been fabricated at Jet Process Corporation using the novel, proprietary Jet Vapor DepositionTM (JVD)TM process. Laminates with a total thickness of 10 μm were made by depositing alternating layers ofapproximately equal thicknesses of copper and aluminum onto preheated silicon wafers at asubstrate temperature of ∼140 °C. The layer thicknesses were systematicallyvaried between 20 nm and 1 μm. The microstructure and properties of the laminates were investigated using transmission electron microscopy (TEM), scanning electron microscopy (SEM), and nanoindentation methods. TEM has shown that the laminates have a strong {111} texture. The hardness results show that above a critical layer thickness of approximately 50 nm, the yield strength of the composites varies inversely with thelayer thickness, while the strength of nanolaminates with layer thicknesses smaller than the critical thickness is better explained by the Koehler model. An alternative model recently proposed by Embury and Hirth fits the data equally well.


1995 ◽  
Vol 31 (6) ◽  
pp. 3853-3855 ◽  
Author(s):  
G.F. Dionne ◽  
Guang-Ji Cui ◽  
D.T. McAvoy ◽  
B.L. Halpern ◽  
J.J. Schmitt

Sign in / Sign up

Export Citation Format

Share Document