Modelling and simulation of high speed, high voltage bipolar SOI transistor with fully depleted collector

Author(s):  
T. Arnborg
2017 ◽  
Vol 10 (3) ◽  
pp. 122
Author(s):  
Flur Ismagilov ◽  
Nikita Uzhegov ◽  
Vyacheslav Vavilov ◽  
Denis Gusakov

2018 ◽  
Vol 4 (4) ◽  
pp. 4-13
Author(s):  
Vladimir A. SIDOROV ◽  
◽  
Gennady D. DOMASHENKO ◽  
Marat R. AKHMETGAREYEV ◽  
Yurii V. SHCHERBAKOV ◽  
...  

Polymers ◽  
2021 ◽  
Vol 13 (13) ◽  
pp. 2098
Author(s):  
Tomas Kalous ◽  
Pavel Holec ◽  
Jakub Erben ◽  
Martin Bilek ◽  
Ondrej Batka ◽  
...  

The electrospinning process that produces fine nanofibrous materials have a major disadvantage in the area of productivity. However, alternating current (AC) electrospinning might help to solve the problem via the modification of high voltage signal. The aforementioned productivity aspect can be observed via a camera system that focuses on the jet creation area and that measures the average lifespan. The paper describes the optimization of polyamide 6 (PA 6) solutions and demonstrates the change in the behavior of the process following the addition of a minor dose of oxoacid. This addition served to convert the previously unspinnable (using AC) solution to a high-quality electrospinning solution. The visual analysis of the AC electrospinning of polymeric solutions using a high-speed camera and a programmable power source was chosen as the method for the evaluation of the quality of the process. The solutions were exposed to high voltage applying two types of AC signal, i.e., the sine wave and the step change. All the recordings presented in the paper contained two sets of data: firstly, camera recordings that showed the visual expression of electrospinning and, secondly, signal recordings that provided information on the data position in the signal function.


2014 ◽  
Vol 778-780 ◽  
pp. 841-844 ◽  
Author(s):  
Koji Nakayama ◽  
Shuji Ogata ◽  
Toshihiko Hayashi ◽  
Tetsuro Hemmi ◽  
Atsushi Tanaka ◽  
...  

The reverse recovery characteristics of a 4H-SiC PiN diode under higher voltage and faster switching are investigated. In a high-voltage 4H-SiC PiN diode, owing to an increased thickness, the drift region does not become fully depleted at a relatively low voltage Furthermore, an electron–hole recombination must be taken into account when the carrier lifetime is equal to or shorter than the reverse recovery time. High voltage and fast switching are therefore needed for accurate analysis of the reverse recovery characteristics. The current reduction rate increases up to 2 kA/μs because of low stray inductance. The maximum reverse voltage during the reverse recovery time reaches 8 kV, at which point the drift layer is fully depleted. The carrier lifetime at the high level injection is 0.086 μs at room temperature and reaches 0.53 μs at 250 °C.


2008 ◽  
Author(s):  
Luigi Battistelli ◽  
Mario Pagano ◽  
Daniela Proto ◽  
Arturo Amendola ◽  
Luigi Candurro ◽  
...  

Sign in / Sign up

Export Citation Format

Share Document