High-mobility, low voltage organic thin film transistors

The primary driver for the development of organic thin-film transistors (TFTs) over the past few decades has been the prospect of electronics applications on unconventional substrates requiring low-temperature processing. A key requirement for many such applications is high-frequency switching or amplification at the low operating voltages provided by lithium-ion batteries (~3 V). To date, however, most organic-TFT technologies show limited dynamic performance unless high operating voltages are applied to mitigate high contact resistances and large parasitic capacitances. Here, we present flexible low-voltage organic TFTs with record static and dynamic performance, including contact resistance as small as 10 Ω·cm, on/off current ratios as large as 1010, subthreshold swing as small as 59 mV/decade, signal delays below 80 ns in inverters and ring oscillators, and transit frequencies as high as 21 MHz, all while using an inverted coplanar TFT structure that can be readily adapted to industry-standard lithographic techniques.

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Five-ring-fused asymmetric thienoacenes for high mobility organic thin-film transistors: the influence of the position of the S atom in the terminal thiophene ring

Journal of Materials Chemistry C ◽

10.1039/c9tc00552h ◽

2019 ◽

Vol 7 (12) ◽

pp. 3656-3664 ◽

Cited By ~ 7

Author(s):

Keqiang He ◽

Shujun Zhou ◽

Weili Li ◽

Hongkun Tian ◽

Qingxin Tang ◽

...

Keyword(s):

Thin Film ◽

Thin Film Transistors ◽

Thiophene Ring ◽

High Mobility ◽

Organic Thin Film Transistors ◽

Organic Thin Film

Two isomeric asymmetric thienoacenes are designed and synthesized; the syn-isomer demonstrates both μsat and μlin above 10 cm2 V−1 s−1.

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Atomic layer deposited HfO2 gate dielectrics for low-voltage operating, high-performance poly-(3-hexythiophene) organic thin-film transistors

Organic Electronics ◽

10.1016/j.orgel.2010.07.026 ◽

2010 ◽

Vol 11 (11) ◽

pp. 1719-1722 ◽

Cited By ~ 27

Author(s):

Woo-Jun Yoon ◽

Paul R. Berger

Keyword(s):

Thin Film ◽

Thin Film Transistors ◽

High Performance ◽

Low Voltage ◽

Gate Dielectrics ◽

Atomic Layer ◽

Organic Thin Film Transistors ◽

Organic Thin Film

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High-mobility organic thin-film transistors based on a small-molecule semiconductor deposited in vacuum and by solution shearing

Organic Electronics ◽

10.1016/j.orgel.2013.09.003 ◽

2013 ◽

Vol 14 (12) ◽

pp. 3213-3221 ◽

Cited By ~ 69

Author(s):

Robert Hofmockel ◽

Ute Zschieschang ◽

Ulrike Kraft ◽

Reinhold Rödel ◽

Nis Hauke Hansen ◽

...

Keyword(s):

Thin Film ◽

Small Molecule ◽

Thin Film Transistors ◽

High Mobility ◽

Organic Thin Film Transistors ◽

Organic Thin Film

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SuPR-NaP Technique for Printing Ultrafine Silver Electrodes and its Use for Low-Voltage Operation of Organic Thin-Film Transistors

MRS Advances ◽

10.1557/adv.2018.423 ◽

2018 ◽

Vol 3 (49) ◽

pp. 2931-2936

Author(s):

G. Kitahara ◽

K. Aoshima ◽

J. Tsutsumi ◽

H. Minemawari ◽

S. Arai ◽

...

Keyword(s):

Thin Film ◽

Dielectric Layer ◽

Thin Film Transistors ◽

Gate Dielectric ◽

Low Voltage ◽

Organic Thin Film Transistors ◽

Base Layer ◽

Organic Thin Film ◽

Low Voltage Operation ◽

Silver Electrodes

ABSTRACTRecently, an epoch-making printing technology called “SuPR-NaP (Surface Photo-Reactive Nanometal Printing)” that allows easy, high-speed, and large-area manufacturing of ultrafine silver wiring patterns has been developed. Here we demonstrate low-voltage operation of organic thin-film transistors (OTFTs) composed of printed source/drain electrodes that are produced by the SuPR-NaP technique. We utilize an ultrathin layer of perfluoropolymer, Cytop, that functions not only as a base layer for producing patterned reactive surface in the SuPR-NaP technique but also as an ultrathin gate dielectric layer of OTFTs. By the use of 22 nm-thick Cytop gate dielectric layer, we successfully operate polycrystalline pentacene OTFTs below 2 V with negligible hysteresis. We also observe the improvement of carrier injection by the surface modification of printed silver electrodes. We discuss that the SuPR-NaP technique allows the production of high-capacitance gate dielectric layers as well as high-resolution printed silver electrodes, which provides promising bases for producing practical active-matrix OTFT backplanes.

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