High-Mobility Single-Crystalline WO3 Epiaxial Films Grown on LSAT Substrates

Author(s):  
Hiroki Mito ◽  
Ryota Nakamura ◽  
Kazuto Koike ◽  
Shizehiko Sasa ◽  
Mitsuaki Yano ◽  
...  
2007 ◽  
Vol 19 (5) ◽  
pp. 678-682 ◽  
Author(s):  
D. H. Kim ◽  
D. Y. Lee ◽  
H. S. Lee ◽  
W. H. Lee ◽  
Y. H. Kim ◽  
...  

2017 ◽  
Vol 5 (31) ◽  
pp. 7919-7926 ◽  
Author(s):  
M. Rathi ◽  
P. Dutta ◽  
N. Zheng ◽  
Y. Yao ◽  
D. Khatiwada ◽  
...  

High mobility n-type GaAs – mobilities greater than 1300 cm2 V−1 s−1, highest achieved among semiconductor films grown directly on Ge template on metal foils.


2008 ◽  
Vol 104 (7) ◽  
pp. 074913 ◽  
Author(s):  
John M. Gregoire ◽  
Steven D. Kirby ◽  
George E. Scopelianos ◽  
Felix H. Lee ◽  
R. Bruce van Dover

2005 ◽  
Vol 44 (No. 38) ◽  
pp. L1193-L1195 ◽  
Author(s):  
Junya Nishii ◽  
Akira Ohtomo ◽  
Keita Ohtani ◽  
Hideo Ohno ◽  
Masashi Kawasaki

2018 ◽  
Vol 6 (10) ◽  
pp. 2419-2423 ◽  
Author(s):  
Longfeng Jiang ◽  
Jie Liu ◽  
Xiuqiang Lu ◽  
Lulu Fu ◽  
Yanjun Shi ◽  
...  

Uniformly aligned single crystal arrays of C8-BTBT were prepared by the LSVC method and their OFETs exhibit high mobility with uniform distribution.


Nano Letters ◽  
2017 ◽  
Vol 17 (10) ◽  
pp. 6248-6257 ◽  
Author(s):  
Reza M. Moghadam ◽  
Zhiyong Xiao ◽  
Kamyar Ahmadi-Majlan ◽  
Everett D. Grimley ◽  
Mark Bowden ◽  
...  

2013 ◽  
Vol 527 ◽  
pp. 9-15 ◽  
Author(s):  
R. Wang ◽  
S.N. Sambandam ◽  
G. Majkic ◽  
E. Galstyan ◽  
V. Selvamanickam

2013 ◽  
Vol 6 (7) ◽  
pp. 076503 ◽  
Author(s):  
Junshi Soeda ◽  
Takafumi Uemura ◽  
Toshihiro Okamoto ◽  
Chikahiko Mitsui ◽  
Masakazu Yamagishi ◽  
...  

AIP Advances ◽  
2017 ◽  
Vol 7 (12) ◽  
pp. 125109 ◽  
Author(s):  
TaeWan Kim ◽  
Hyeji Park ◽  
Hyeoksu Bae ◽  
Minhyuk Jo ◽  
Soo-Hwan Jeong ◽  
...  

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