Research of mechanism on the improvement of silicon carbide ohmic contact property influenced by nanometer metal particles

2008 ◽  
Author(s):  
Jiang Yanfeng ◽  
Yang Bing ◽  
Zhang Xiaobo ◽  
Ju Jiaxin
Keyword(s):  
Silicon Carbide ◽  
Ohmic Contact ◽  
Metal Particles ◽  
Contact Property

Enhanced Ohmic contact via graphitization of polycrystalline silicon carbide

2010 ◽  
Vol 97 (26) ◽  
pp. 262107 ◽  
Author(s):  
F. Liu ◽  
B. Hsia ◽  
C. Carraro ◽  
A. P. Pisano ◽  
R. Maboudian
Keyword(s):  
Silicon Carbide ◽  
Ohmic Contact ◽  
Polycrystalline Silicon ◽  
Polycrystalline Silicon Carbide

Analysis of Forward Surge Performance of SiC Schottky Diodes

2018 ◽  
Vol 924 ◽  
pp. 621-624 ◽  
Author(s):  
Rahul Radhakrishnan ◽  
Nathanael Cueva ◽  
Tony Witt ◽  
Richard L. Woodin
Keyword(s):  
Silicon Carbide ◽  
Failure Analysis ◽  
Ohmic Contact ◽  
Schottky Diodes ◽  
Forward Bias ◽  
Device Failure ◽  
Electrical Failure ◽  
The Impact ◽  
Surge Current

Silicon Carbide JBS diodes are capable, in forward bias, of carrying surge current of magnitude significantly higher than their rated current, for short periods. In this work, we examine the mechanisms of device failure due to excess surge current by analyzing variation of failure current with device current and voltage ratings, as well as duration of current surge. Physical failure analysis is carried out to correlate to electrical failure signature. We also quantify the impact, on surge current capability, of the resistance of the anode ohmic contact to the p-shielding region.

Effects of Surface and Interlayer Processing Conditions on Selected Ohmic Contact Metallizations for p-type Silicon Carbide

2000 ◽  
Vol 640 ◽  
Author(s):  
L. M. Porter ◽  
T. Jang ◽  
T. Worren ◽  
K. C. Chang ◽  
N. A. Papanicolaou ◽  
...  
Keyword(s):  
Silicon Carbide ◽  
Surface Morphology ◽  
Ohmic Contact ◽  
Deposition Temperature ◽  
Doping Concentration ◽  
Processing Conditions ◽  
Dopant Incorporation ◽  
Specific Contact ◽  
Specific Contact Resistivity ◽  
P Type

ABSTRACTA comparative study of Pt and Pt/Si contacts to p-type 6H-SiC in terms of various processing conditions and interlayer specifications was performed. Deposition temperature, the thickness of the Si layer, and B-dopant incorporation in the Si were found to significantly affect the specific contact resistivity (SCR) values. In addition, pre-etching of the SiC surface in SF6 + Ar was found to consistently reduce the SCR's. The lowest average SCR values were 3 × 10−5 Ωcm2 for Pt/Si/SiC contacts deposited on pre-etched SiC surfaces (7.0 × 1018 cm−3 doping concentration) and annealed at 1100 °C for 5 min.Aluminum-titanium contacts also showed dependence on the thicknesses of the Al and Ti layers and on the locations of the layers. Differences in both the SCRs and surface morphology are presented.

Effect of oxygen incorporation ina-plane GaN on p-type ohmic contact property

2014 ◽  
Vol 53 (9) ◽  
pp. 090307 ◽  
Author(s):  
Ki-Chang Jung ◽  
Inwoo Lee ◽  
Jaehyoung Park ◽  
Hyojung Bae ◽  
Chung Yi Kim ◽  
...  
Keyword(s):  
Ohmic Contact ◽  
Oxygen Incorporation ◽  
Contact Property ◽  
Effect Of Oxygen ◽  
P Type

Fabrication of ohmic contact on the carbon-terminated surface of n-type silicon carbide

2013 ◽  
Vol 550 ◽  
pp. 46-49 ◽  
Author(s):  
Mingsheng Xu ◽  
Xiaobo Hu ◽  
Yan Peng ◽  
Kun Yang ◽  
Wei Xia ◽  
...  
Keyword(s):  
Silicon Carbide ◽  
Ohmic Contact ◽  
Type Silicon

Formation of the intermediate semiconductor layer for the Ohmic contact to silicon carbide using Germanium implantation

2009 ◽  
Vol 18 (10) ◽  
pp. 4470-4473 ◽  
Author(s):  
Guo Hui ◽  
Wang Yue-Hu ◽  
Zhang Yu-Ming ◽  
Qiao Da-Yong ◽  
Zhang Yi-Men
Keyword(s):  
Silicon Carbide ◽  
Ohmic Contact ◽  
Semiconductor Layer

Effects of Annealing and Different Substrate Materials on Ohmic Contact Property of IGZO Films

2013 ◽  
Vol 423-426 ◽  
pp. 846-851
Author(s):  
Ji Feng Shi
Keyword(s):  
Electrical Properties ◽  
Ohmic Contact ◽  
Annealing Temperature ◽  
Optical And Electrical Properties ◽  
Glass Substrates ◽  
Contact Property ◽  
Suitable Temperature ◽  
Contact Characteristic ◽  
Amorphous Ingazno ◽  
Better Than

Amorphous InGaZnO(a-IGZO) films were deposited on the glass substrates with Al/Mo/ITO films separately using magnetron sputtering and photograph methods,to form resistance structures between a-IGZO films and Al/Mo/ITO films.These samples were annealed in the air and N2 ambience in a series of temperature separately.The results show that regardless of N2 or air ambience,samples annealing at 250 degrade,IGZO films show a good ohmic contact characteristic withAl/Mo/ITOmaterials.And,IGZO films have a better ohmic contact characteristic with ITO/Al than Mo. The transmittance of the IGZO films annealed is better than the transmittance of samples without annealing.And ,the transmittance of samples annealed is rising with the increasing of annealing temperature. Considering the optical and electrical properties of IGZO films, we suggest that 250 centi degrades is a suitable temperature for annealing.

Silicon carbide Schottky and ohmic contact process dependence

2002 ◽  
Vol 11 (3-6) ◽  
pp. 1258-1262 ◽  
Author(s):  
M. Badila ◽  
G. Brezeanu ◽  
J. Millan ◽  
P. Godignon ◽  
V. Banu
Keyword(s):  
Silicon Carbide ◽  
Ohmic Contact ◽  
Contact Process
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