Simulation study on a new dual-material nanowire MOS surrounding-gate transistor

2010 3rd International Nanoelectronics Conference (INEC) ◽

10.1109/inec.2010.5424621 ◽

2010 ◽

Author(s):

Wang Zhou ◽

Lining Zhang ◽

Yiwen Xu ◽

Lin Chen ◽

F. He

Keyword(s):

Simulation Study ◽

Surrounding Gate ◽

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Simulation Study on a New Dual-Material Nanowire MOS Surrounding-Gate Transistor

Journal of Nanoscience and Nanotechnology ◽

10.1166/jnn.2011.3962 ◽

2011 ◽

Vol 11 (12) ◽

pp. 11006-11010 ◽

Author(s):

Wang Zhou ◽

Lining Zhang ◽

Lin Chen ◽

Yiwen Xu ◽

Wen Wu ◽

...

Keyword(s):

Simulation Study ◽

Surrounding Gate ◽

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A new compact subthreshold behavior model for dual-material surrounding gate (DMSG) MOSFETs

Solid-State Electronics ◽

10.1016/j.sse.2009.02.007 ◽

2009 ◽

Vol 53 (5) ◽

pp. 490-496 ◽

Author(s):

T.K. Chiang

Keyword(s):

Behavior Model ◽

Surrounding Gate ◽

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Quantum simulation study of dual-material double gate (DMDG) MOSFET: NEGF approach

2008 IEEE Silicon Nanoelectronics Workshop ◽

10.1109/snw.2008.5418485 ◽

2008 ◽

Author(s):

Zahra Arefinia ◽

Ali A. Orouji

Keyword(s):

Simulation Study ◽

Quantum Simulation ◽

Double Gate ◽

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A In-depth Simulation Study of CMOS Inverters Based on the Novel Surrounding Gate Transistors

10.1109/enics.2008.8 ◽

2008 ◽

Author(s):

J.B. Roldan ◽

F. Gomiz

Keyword(s):

Simulation Study ◽

The Novel ◽

Surrounding Gate

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Suppression of Short Channel Effects(SCEs) by Dual Material Gate Vertical Surrounding Gate(DMGVSG) MOSFET: 3-D TCAD Simulation

Procedia Engineering ◽

10.1016/j.proeng.2013.09.083 ◽

2013 ◽

Vol 64 ◽

pp. 125-132 ◽

Author(s):

D. Bhanu Chandar ◽

Narendar Vadthiya ◽

Alok Kumar ◽

R.A. Mishra

Keyword(s):

Short Channel Effects ◽

Short Channel ◽

Surrounding Gate ◽

Channel Effects ◽

Tcad Simulation ◽

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Simulation study for Dual Material Gate Hetero-Dielectric TFET: Static performance analysis for analog applications

2013 Annual IEEE India Conference (INDICON) ◽

10.1109/indcon.2013.6725867 ◽

2013 ◽

Author(s):

Upasana ◽

Rakhi Narang ◽

Mridula Gupta ◽

Manoj Saxena

Keyword(s):

Performance Analysis ◽

Simulation Study ◽

Static Performance ◽

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Simulation Study of Dielectric Modulated Dual Material Gate TFET Based Biosensor by Considering Ambipolar Conduction

Silicon ◽

10.1007/s12633-020-00784-9 ◽

2020 ◽

Author(s):

N. Nagendra Reddy ◽

Deepak Kumar Panda

Keyword(s):

Simulation Study ◽

Dual Material ◽

Ambipolar Conduction

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Analytical Modeling of Electric Field Distribution in Dual Material Junctionless Surrounding Gate MOSFETs

International Journal of VLSI Design & Communication Systems ◽

10.5121/vlsic.2014.5308 ◽

2014 ◽

Vol 5 (3) ◽

pp. 83-92

Author(s):

P. Suveetha Dhanaselvam ◽

A. Nithya Ananthi

Keyword(s):

Electric Field ◽

Field Distribution ◽

Analytical Modeling ◽

Electric Field Distribution ◽

Surrounding Gate ◽

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Analytical model including the fringing-induced barrier lowering effect for a dual-material surrounding-gate MOSFET with a high-κ gate dielectric

Chinese Physics B ◽

10.1088/1674-1056/21/4/048501 ◽

2012 ◽

Vol 21 (4) ◽

pp. 048501 ◽

Author(s):

Cong Li ◽

Yi-Qi Zhuang ◽

Li Zhang ◽

Jun-Lin Bao

Keyword(s):

Analytical Model ◽

Gate Dielectric ◽

Lowering Effect ◽

Surrounding Gate ◽

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Performance evaluation of junctionless double surrounding gate In0.53Ga0.47As nanotube MOSFET using dual material gate engineering

Journal of Materials Science Materials in Electronics ◽

10.1007/s10854-021-05583-5 ◽

2021 ◽

Vol 32 (7) ◽

pp. 9171-9182

Author(s):

Sanjay ◽

B. Prasad ◽

Anil Vohra

Keyword(s):

Performance Evaluation ◽

Surrounding Gate ◽

Gate Engineering ◽

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