A rapid evaluation method for degradation activation energy of n-GaAs ohmic contacts with and without TiN diffusion barrier layers

2002 ◽  
Author(s):  
Zhang Wan-rong ◽  
Li Zhi-guo ◽  
Mu Fu-chen ◽  
Wang Li-xin ◽  
Sun Ying-hua ◽  
...  
Keyword(s):  
Activation Energy ◽  
Diffusion Barrier ◽  
Ohmic Contacts ◽  
Evaluation Method ◽  
Rapid Evaluation ◽  
Barrier Layers ◽  
Degradation Activation Energy ◽  
Tin Diffusion Barrier

Rapid evaluation degradation activation energy of n-GaAs ohmic contacts with and without TiN diffusion barrier layers

2001 ◽  
Vol 45 (7) ◽  
pp. 1183-1187
Author(s):  
Wan-rong Zhang ◽  
Zhi-guo Li ◽  
Fu-chen Mu ◽  
Ying-hua Sun ◽  
Yao-hai Cheng ◽  
...  
Keyword(s):  
Activation Energy ◽  
Diffusion Barrier ◽  
Ohmic Contacts ◽  
Rapid Evaluation ◽  
Barrier Layers ◽  
Degradation Activation Energy ◽  
Tin Diffusion Barrier

Dual Role of Tin Reaction Barrier in Gold-Based Metallization to GaAs

1993 ◽  
Vol 300 ◽  
Author(s):  
A. Piotrowska ◽  
E. Kaminska ◽  
M. Guziewicz ◽  
S. Kwiatkowski ◽  
A. Turos
Keyword(s):  
Magnetron Sputtering ◽  
Contact Resistance ◽  
Ohmic Contact ◽  
Diffusion Barrier ◽  
Ohmic Contacts ◽  
Specific Contact Resistance ◽  
Tin Films ◽  
Specific Contact ◽  
Tin Diffusion Barrier

ABSTRACTThe formation of ohmic contacts to p-GaAs based on Au-Zn system comprising a TiN diffusion barrier has been investigated using 2 MeV He+ RBS and the specific contact resistance measurements. It has been proved that TiN films deposited by reactive RF bias magnetron sputtering serves two purposes. First it suppresses the arsenic evaporation and thus confines the reaction between AuZn and GaAs. Second, it prevents intermixing between p-GaAs/Au(Zn) ohmic contact and an overlayer of Au.

Ohmic Contact to n-GaN with TiN Diffusion Barrier

1996 ◽  
Vol 449 ◽  
Author(s):  
E. Kamińska ◽  
A. Piotrowska ◽  
M. Guziewicz ◽  
S. Kasjaniuk ◽  
A. Barcz ◽  
...  
Keyword(s):  
Phase Transformation ◽  
Ohmic Contact ◽  
Diffusion Barrier ◽  
Ohmic Contacts ◽  
Diffusion Barriers ◽  
X Ray Diffraction ◽  
Electrical Measurements ◽  
Thermally Induced ◽  
X Ray ◽  
Tin Diffusion Barrier

ABSTRACTThe formation of n-GaN/Ti ohmic contacts with TiN diffusion barriers has been investigated by electrical measurements, x-ray diffraction and SIMS. It has been shown that the onset of the ohmic behaviour is associated with the thermally induced phase transformation of Ti into TiN at the GaN/Ti interface. It is suggested that the process is accompanied by an increase in the doping level in the semiconductor subcontact region. The presence of a TiN barrier is found to inhibit excessive decomposition of GaN and to confine the reaction between n-GaN and Ti.

Electrical characterization of reactively sputtered TiN diffusion barrier layers for copper metallization

1995 ◽  
Vol 91 (1-4) ◽  
pp. 291-294 ◽  
Author(s):  
C. Kaufmann ◽  
J. Baumann ◽  
T. Gessner ◽  
T. Raschke ◽  
M. Rennau ◽  
...  
Keyword(s):  
Diffusion Barrier ◽  
Electrical Characterization ◽  
Copper Metallization ◽  
Barrier Layers ◽  
Tin Diffusion Barrier

scholarly journals DIFFUSION BARRIER LAYERS FOR OHMIC CONTACTS TO GaAs

1988 ◽  
Vol 49 (C4) ◽  
pp. C4-427-C4-430 ◽  
Author(s):  
D. A. ALLAN ◽  
J. HERNIMAN ◽  
M. J. GILBERT ◽  
P. J. O'SULLIVAN ◽  
M. P. GRIMSHAW ◽  
...  
Keyword(s):  
Diffusion Barrier ◽  
Ohmic Contacts ◽  
Barrier Layers

Limitation of Ti/TiN diffusion barrier layers in silicon technology

Vacuum ◽  
1985 ◽  
Vol 35 (12) ◽  
pp. 547-553 ◽  
Author(s):  
H. Norström ◽  
S. Nygren ◽  
P. Wiklund ◽  
M. Östling ◽  
R. Buchta ◽  
...  
Keyword(s):  
Diffusion Barrier ◽  
Barrier Layers ◽  
Silicon Technology ◽  
Tin Diffusion Barrier

An Imaging-Based Rapid Evaluation Method for Complement-Dependent Cytotoxicity Discriminated Clinical Response to Rituximab-Containing Chemotherapy

2009 ◽  
Vol 15 (10) ◽  
pp. 3624-3632 ◽  
Author(s):  
Yuji Mishima ◽  
Natsuhiko Sugimura ◽  
Yuko Matsumoto-Mishima ◽  
Yasuhito Terui ◽  
Kengo Takeuchi ◽  
...  
Keyword(s):  
Clinical Response ◽  
Evaluation Method ◽  
Rapid Evaluation ◽  
Complement Dependent Cytotoxicity
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