SIMULATION OF THE INTERDEVICE LEAKAGE CURRENT UNDERNEATH THICK ISOLATION OXIDES IN CMOS FPGAS
High Temperature Material Processes An International Quarterly of High-Technology Plasma Processes
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2017 ◽
Vol 21
(4)
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pp. 325-331
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2008 ◽
Vol 128
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pp. 885-889
2017 ◽
Vol 137
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pp. 481-486
2010 ◽
Vol 130
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pp. 1037-1041
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Vol 8
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pp. 9487-9492
2017 ◽
Vol 9
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pp. 06009-1-06009-4
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