Failure Analysis of 100 nm AlGaN/GaN HEMTs Stressed under On- and Off-State Stress

Abstract HEMT (High Electron Mobility Transistor) are playing a key role for power and RF low noise applications. They are crucial components for the development of base stations in the telecommunications networks and for civil, defense and space radar applications. As well as the improvement of the MMIC performances, the localization of the defects and the failure analysis of these devices are very challenging. To face these challenges, we have developed a complete approach, without degrading the component, based on front side failure analysis by standard (Visible-NIR) and Infrared (range of wavelength: 3-5 µm) electroluminescence techniques. Its complementarities and efficiency have been demonstrated through two case studies.

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Recent progress of physical failure analysis of GaN HEMTs

Journal of Semiconductors ◽

10.1088/1674-4926/42/5/051801 ◽

2021 ◽

Vol 42 (5) ◽

pp. 051801

Author(s):

Xiaolong Cai ◽

Chenglin Du ◽

Zixuan Sun ◽

Ran Ye ◽

Haijun Liu ◽

...

Keyword(s):

Failure Analysis ◽

Recent Progress ◽

Gan Hemts

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TCAD-based failure analysis and modeling of pit formation in GaN HEMTs

2011 IEEE International Integrated Reliability Workshop Final Report ◽

10.1109/iirw.2011.6142601 ◽

2011 ◽

Author(s):

T. Seigenthaler ◽

T. Weatherford ◽

M. Porter

Keyword(s):

Failure Analysis ◽

Pit Formation ◽

Gan Hemts

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Understanding the Threshold Voltage Instability During OFF-State Stress in p-GaN HEMTs

IEEE Electron Device Letters ◽

10.1109/led.2019.2925776 ◽

2019 ◽

Vol 40 (8) ◽

pp. 1253-1256 ◽

Cited By ~ 8

Author(s):

Loizos Efthymiou ◽

Karthick Murukesan ◽

Giorgia Longobardi ◽

Florin Udrea ◽

Ayman Shibib ◽

...

Keyword(s):

Threshold Voltage ◽

Voltage Instability ◽

Gan Hemts ◽

State Stress

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Extensive Investigation of Time-Dependent Breakdown of GaN-HEMTs Submitted to OFF-State Stress

IEEE Transactions on Electron Devices ◽

10.1109/ted.2015.2446032 ◽

2015 ◽

Vol 62 (8) ◽

pp. 2549-2554 ◽

Cited By ~ 28

Author(s):

Matteo Meneghini ◽

Isabella Rossetto ◽

Fred Hurkx ◽

Jan Sonsky ◽

Jeroen A. Croon ◽

...

Keyword(s):

Time Dependent ◽

Extensive Investigation ◽

Gan Hemts ◽

State Stress

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Reliability and failure analysis in power GaN-HEMTs during S-band pulsed-RF operating

Microelectronics Reliability ◽

10.1016/j.microrel.2021.114295 ◽

2021 ◽

pp. 114295

Author(s):

N. Moultif ◽

S. Duguay ◽

O. Latry ◽

M. Ndiaye ◽

E. Joubert

Keyword(s):

Failure Analysis ◽

Gan Hemts ◽

Pulsed Rf

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Experimental and numerical investigation of Poole-Frenkel effect on dynamic R ON transients in C-doped p-GaN HEMTs

Semiconductor Science and Technology ◽

10.1088/1361-6641/ac4113 ◽

2021 ◽

Author(s):

Nicolò Zagni ◽

Marcello Cioni ◽

Ferdinando Iucolano ◽

Maurizio Moschetti ◽

Giovanni Verzellesi ◽

...

Keyword(s):

Numerical Simulations ◽

Room Temperature ◽

Arrhenius Plot ◽

Exponential Dependence ◽

Frenkel Effect ◽

Simultaneous Decrease ◽

Gan Hemts ◽

Dominant Acceptor ◽

State Stress

Abstract In this paper, we investigate the influence of Poole-Frenkel Effect (PFE) on the dynamic R ON transients in C-doped p-GaN HEMTs. To this aim, we perform a characterization of the dynamic R ON transients acquired during OFF-state stress (i.e., V GS,STR = 0 V < V T, V DS,STR = 25–125 V and we interpret the results with the aid of numerical simulations. We find that dynamic R ON transients at room temperature accelerate with V DS,STR 1/2, which is signature of PFE, as further confirmed by the simultaneous decrease of the activation energy (E A) extracted from the Arrhenius plot of the dynamic R ON transients at V DS,STR = 50 V and T = 30–110 °C. Results obtained by means of calibrated numerical simulations reproduce the exponential dependence of transients time constants (τ) on V DS,STR 1/2 and consequent E A reduction only when including PFE enhancement of hole emission from dominant acceptor traps in the buffer related to C doping. This result is consistent with the model that considers hole emission from acceptor traps (rather than electron capture) as the mechanism underlying dynamic R ON increase during OFF-state stress.

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Geo-Membrane Strength and Failure Analysis of Dumping Large Geo-Container

Key Engineering Materials ◽

10.4028/www.scientific.net/kem.480-481.899 ◽

2011 ◽

Vol 480-481 ◽

pp. 899-903

Author(s):

Ying Tie ◽

Cheng Li ◽

Bao Sen Zhang

Keyword(s):

Finite Element ◽

Failure Analysis ◽

Element Model ◽

Fem Model ◽

Dynamics Calculation ◽

Dynamic Meshing ◽

Mesh Technique ◽

The Finite Element Model ◽

State Stress ◽

Membrane Strength

Kinetic equation of dumping geo-container is considered, ALE dynamic mesh technique of finite element is applied, and strength and failure problem in the process of geo-container hitting the bottom is discussed. The finite element model of dynamic meshing is established, and the motion state, stress and strain of the geo-membrane of the large geo-container during the process of dumping are analyzed and calculated. By comparing with the results of the flume model experiment and dynamics calculation, the results verify the FEM model of fluid-structure coupled dumping geo-container; during the dumping, the tensile stress on the geo-membrane is the largest at the first 0.24 seconds after the geo-container hitting the bottom, and the maximum is 6.936 MPa at node 397 in the geo-container; after the failure analysis of the geo-membrane, the breaking strength is 27.050 MPa, which is less than the allowable strength, and meets with the strength requirements.

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