TCAD-based failure analysis and modeling of pit formation in GaN HEMTs

2011 ◽  
Author(s):  
T. Seigenthaler ◽  
T. Weatherford ◽  
M. Porter
Keyword(s):  
Failure Analysis ◽  
Pit Formation ◽  
Gan Hemts

Infrared and Visible—Near Infrared Electroluminescence Developments for FA in AlGaN/GaN HEMTS on SiC

2010 ◽  
Author(s):  
M. Bouya ◽  
D. Carisetti ◽  
J.C. Clement ◽  
N. Malbert ◽  
N. Labat ◽  
...  
Keyword(s):  
Failure Analysis ◽  
Near Infrared ◽  
High Electron Mobility Transistor ◽  
Low Noise ◽  
Civil Defense ◽  
Base Stations ◽  
Infrared Range ◽  
High Electron ◽  
Radar Applications ◽  
Gan Hemts

Abstract HEMT (High Electron Mobility Transistor) are playing a key role for power and RF low noise applications. They are crucial components for the development of base stations in the telecommunications networks and for civil, defense and space radar applications. As well as the improvement of the MMIC performances, the localization of the defects and the failure analysis of these devices are very challenging. To face these challenges, we have developed a complete approach, without degrading the component, based on front side failure analysis by standard (Visible-NIR) and Infrared (range of wavelength: 3-5 µm) electroluminescence techniques. Its complementarities and efficiency have been demonstrated through two case studies.

Recent progress of physical failure analysis of GaN HEMTs

2021 ◽  
Vol 42 (5) ◽  
pp. 051801
Author(s):  
Xiaolong Cai ◽  
Chenglin Du ◽  
Zixuan Sun ◽  
Ran Ye ◽  
Haijun Liu ◽  
...  
Keyword(s):  
Failure Analysis ◽  
Recent Progress ◽  
Gan Hemts

Reliability and failure analysis in power GaN-HEMTs during S-band pulsed-RF operating

2021 ◽  
pp. 114295
Author(s):  
N. Moultif ◽  
S. Duguay ◽  
O. Latry ◽  
M. Ndiaye ◽  
E. Joubert
Keyword(s):  
Failure Analysis ◽  
Gan Hemts ◽  
Pulsed Rf

Failure Analysis of 100 nm AlGaN/GaN HEMTs Stressed under On- and Off-State Stress

2020 ◽  
Author(s):  
Tobias Kemmer ◽  
Michael Dammann ◽  
Martina Baeumler ◽  
Vladimir Polyakov ◽  
Peter Bruckner ◽  
...  
Keyword(s):  
Failure Analysis ◽  
Gan Hemts ◽  
State Stress

Reliability and Failure Analysis of 100 nm AlGaN/GaN HEMTs under DC and RF Stress

2021 ◽  
Author(s):  
M. Dammann ◽  
M. Baeumler ◽  
T. Kemmer ◽  
H. Konstanzer ◽  
P. Bruckner ◽  
...  
Keyword(s):  
Failure Analysis ◽  
Gan Hemts

Failure analysis of normally-off GaN HEMTs under avalanche conditions

2020 ◽  
Vol 35 (3) ◽  
pp. 035007 ◽  
Author(s):  
P J Martínez ◽  
S Letz ◽  
E Maset ◽  
D Zhao
Keyword(s):  
Failure Analysis ◽  
Gan Hemts

Reliability and failure analysis in power GaN-HEMTs: An overview

2017 ◽  
Author(s):  
Matteo Meneghini ◽  
Isabella Rossetto ◽  
Carlo De Santi ◽  
Fabiana Rampazzo ◽  
Alaleh Tajalli ◽  
...  
Keyword(s):  
Failure Analysis ◽  
Gan Hemts

Failure Analysis With the Scanning Electron Microscope

1972 ◽  
Vol 30 ◽  
pp. 482-483
Author(s):  
John R. Devaney
Keyword(s):  
Electron Microscope ◽  
Scanning Electron Microscope ◽  
Integrated Circuits ◽  
Failure Analysis ◽  
High Reliability ◽  
Military Applications ◽  
Small Structure ◽  
Useful Life ◽  
Insight Into ◽  
Scanning Electron

Occasionally in history, an event may occur which has a profound influence on a technology. Such an event occurred when the scanning electron microscope became commercially available to industry in the mid 60's. Semiconductors were being increasingly used in high-reliability space and military applications both because of their small volume but, also, because of their inherent reliability. However, they did fail, both early in life and sometimes in middle or old age. Why they failed and how to prevent failure or prolong “useful life” was a worry which resulted in a blossoming of sophisticated failure analysis laboratories across the country. By 1966, the ability to build small structure integrated circuits was forging well ahead of techniques available to dissect and analyze these same failures. The arrival of the scanning electron microscope gave these analysts a new insight into failure mechanisms.

Using the scanning electron microscope for failure analysis of high density magnetic media

1987 ◽  
Vol 45 ◽  
pp. 392-393
Author(s):  
Evelyn R. Ackerman ◽  
Gary D. Burnett
Keyword(s):  
Electron Microscope ◽  
Scanning Electron Microscope ◽  
Failure Analysis ◽  
High Density ◽  
Magnetic Media ◽  
Specific Data ◽  
Retrieval Systems ◽  
Operating Environments ◽  
The Media ◽  
Scanning Electron

Advancements in state of the art high density Head/Disk retrieval systems has increased the demand for sophisticated failure analysis methods. From 1968 to 1974 the emphasis was on the number of tracks per inch. (TPI) ranging from 100 to 400 as summarized in Table 1. This emphasis shifted with the increase in densities to include the number of bits per inch (BPI). A bit is formed by magnetizing the Fe203 particles of the media in one direction and allowing magnetic heads to recognize specific data patterns. From 1977 to 1986 the tracks per inch increased from 470 to 1400 corresponding to an increase from 6300 to 10,800 bits per inch respectively. Due to the reduction in the bit and track sizes, build and operating environments of systems have become critical factors in media reliability.Using the Ferrofluid pattern developing technique, the scanning electron microscope can be a valuable diagnostic tool in the examination of failure sites on disks.

Sign in / Sign up

Export Citation Format

Share Document