Wafer-level reliability assessment of SiGe NPN HBTs after high temperature electrical operation

Author(s):  
K. Hofmann ◽  
G. Bruegmann ◽  
A. Lill
2012 ◽  
Vol 2012 (DPC) ◽  
pp. 001253-001283
Author(s):  
Satoshi Okude ◽  
Kazushisa Itoi ◽  
Masahiro Okamoto ◽  
Nobuki Ueta ◽  
Osamu Nakao

We have developed active and passive devices embedded multilayer board utilizing our laminate-based WLCSP embedding technology. The proposed embedded board is realized by laminating plural circuit formed polyimide films together by adhesive with thin devices being arranged in between those polyimide layers. The electrical connection via has a filled via structure composed of the alloy forming conductive paste which ensures high reliable connection. The embedded active device is WLCSP which has no solder bump on its pads therefore the thickness of the die is reduced to 80 microns. The embedded passive device is a chip resistor or capacitor whose thickness is 150 microns with copper electrodes. The electrical connection between components and board's circuits are made by same conductive paste vias. The thin film based structure and low profile devices yields the 260 microns thickness board which is the thinnest embedded of its kind in the world. To confirm the reliability of the embedded board, we have performed several reliability tests on the WLCSP and resistors embedded TEG board of 4 polyimide/5 copper circuit layers. As environmental tests, we performed a moisture reflow test compliant to JEDEC MSL2 followed by a thermal cycling test (−55 deg.C to 125 deg.C, 1000cycles) and a high temperature storage test (150 deg.C). All tested samples passed the moisture reflow test and showed no significant change of circuit resistance after the thermal cycling/high temperature storage tests. Moreover, mechanical durability of the board was also confirmed by bending the devices embedded portion. The embedded device was never broken and the circuit resistance change was also within acceptable range. The proposed embedded board will open up a new field of device packaging. Alan/Rey ok move from Flip Chip and Wafer Level Packaging 1-3-12.


2017 ◽  
Vol 897 ◽  
pp. 743-746 ◽  
Author(s):  
Satoshi Tanimoto ◽  
Tatsuhiro Suzuki ◽  
Sawa Araki ◽  
Toshiharu Makino ◽  
Hiromitsu Kato ◽  
...  

The long-term reliability of Schottky pn diodes (SPNDs) on diamond having widely used Ti/Pt/Au electrodes was investigated at 500°C in order to identify degradation phenomena at higher temperatures. A vital degradation event was observed after the passage of about 100 hours in that both forward and reverse currents were progressively reduced. AES depth profiling and X-STEM-EELS analyses revealed that this occurred because the Ti contact material changed to insulating (or semiconductive) TiO2, causing large series resistance.


2015 ◽  
Vol 46 (11) ◽  
pp. 5266-5274 ◽  
Author(s):  
Thi-Thuy Luu ◽  
Nils Hoivik ◽  
Kaiying Wang ◽  
Knut E. Aasmundtveit ◽  
Astrid-Sofie B. Vardøy

Author(s):  
Thomas Santini ◽  
Morand Sebastien ◽  
Miller Florent ◽  
Luong-Viet Phung ◽  
Bruno Allard

2021 ◽  
Author(s):  
S. W. R. Lee ◽  
J. C. C. Lo ◽  
X. Qiu ◽  
N. Tu

Abstract Re-distribution layer (RDL) is one key enabling technology for advance packaging. RDL is usually fabricated in wafer level by photolithography process. An alternative approach for implementing RDL by additive manufacturing (AM) method is proposed in this study. This allows RDL to be fabricated on singulation chip. Nano-silver (nano-Ag) ink is printed on the silicon chip to form routing traces and bond pads. However, the Ag pad may be consumed by solder quickly if the process is not properly controlled. This paper studied the effect of nano-Ag ink sintering condition on the solderability of Ag pad. The solder joint mechanical integrity was evaluated by solder ball shear test. High temperature storage test was also carried out to evaluate the solder joint reliability. Experiment results showed that Ag pad fabricated by AM is SMT compatible. High temperature storage did not cause early failure to the samples. There was not significant change in the Ag3Sn IMC layer thickness and mechanical strength. The finding of the present study will serve as a very useful reference for future practice of forming solder joints on sintered nano-Ag pads.


2013 ◽  
Vol 106 ◽  
pp. 195-199 ◽  
Author(s):  
F. Bana ◽  
E. Petitprez ◽  
D. Ney ◽  
L. Arnaud ◽  
Y. Wouters

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