The influence of strain on the dielectric behavior of (Ba/sub x/Sr/sub 1-x/)Ti/sub 1+y/O/sub 3+z/ thin films grown by LS-MOCVD on Pt/SiO/sub 2//Si

Author(s):  
S.K. Streiffer ◽  
C. Basceri ◽  
C.B. Parker ◽  
S.E. Lash ◽  
J. Christman ◽  
...  
2007 ◽  
Vol 42 (14) ◽  
pp. 5875-5879 ◽  
Author(s):  
Irine Banu Lucy

2021 ◽  
Vol 11 (04) ◽  
pp. 2150019
Author(s):  
Chenjing Wu ◽  
Manwen Yao

Compositional-gradient [Formula: see text][Formula: see text]O3 thin films on Pt(100)/Ti/SiO2/Si substrates are fabricated with sol–gel using spin coating. All of the structures of the prepared thin films are of single-phase crystalline perovskite with a dense and crack-free surface morphology. BTS10/15/20 thin film exhibits enhanced temperature stability in its dielectric behavior. The temperature coefficient of capacitance [Formula: see text] in the temperature range from [Formula: see text]C to [Formula: see text]C is [Formula: see text]C and that of [Formula: see text] in the temperature range from [Formula: see text]C to [Formula: see text]C is [Formula: see text]C. Furthermore, the thin films show low leakage current density and dielectric loss. High and stable dielectric tunable performances are found in BTS10/15/20 thin films: the dielectric tunability of the thin films is around 20.1% under a bias voltage of 8 V at 1 MHz and the corresponding dielectric constant is in the range between 89 and 111, which is beneficial for impedance matching in circuits. Dielectric tunability can be obtained under a low tuning voltage, which helps ensure safety. The simulated resonant frequency of the compositional-gradient BTS thin films depends on the bias electric field, showing compositional-gradient BTS thin films could be used in electrically tunable components and devices. These properties make compositional-gradient BTS thin films a promising candidate for dielectric tuning.


2001 ◽  
Vol 672 ◽  
Author(s):  
S. Bhaskar ◽  
S. B. Majumder ◽  
P. S. Dobal ◽  
S. B. Krupanidhi ◽  
R. S. Katiyar

ABSTRACTSol-Gel derived Pb0.85La0.15TiO3 PLT15) thin films were deposited on solution derived RuO2/Si, RuO2/Pt/Si and Pt bottom electrodes. Dielectric, tangent loss, hysteresis, J-E, measurements were also carried out on these films. X-ray results established the single phase perovskite formation with no secondary phases of PLT15 thin film on these electrodes. PLT15 thin films on RuO2 bottom electrode showed relatively inferior ferroelectric and dielectric behavior as compared to Pt electrode. Low leakage currents (10-8 A/cm2 at 10 kV/cm) and the observed J-E characteristics have been attributed to poor film-electrode interface. Observed electrical and dielectric properties have been correlated with the film-electrode interface. The interface characteristics were further augmented by depth profile analysis using Auger Electron Spectroscopy.


2011 ◽  
Vol 94 (11) ◽  
pp. 3900-3906 ◽  
Author(s):  
Andreja Eršte ◽  
Barbara Malic̆ ◽  
Brigita Kužnik ◽  
Marija Kosec ◽  
Vid Bobnar

2006 ◽  
Vol 10 (10) ◽  
pp. 1179-1189 ◽  
Author(s):  
Christian Kelting ◽  
Wilfried Michaelis ◽  
Andreas Hirth ◽  
Dieter Wöhrle ◽  
Derck Schlettwein

Films of organic polymers were prepared and investigated as insulating layers in contact with phthalocyanines as organic semiconductors for use in organic field effect transistors. The polymer films were obtained either by a high-vacuum technique based on the thermal decomposition of polymers and polymerization of the fragments on a substrate, by the spin-coating of polymer solutions or by the cross-linking of spin-coated precursors. Poly(vinylchloride), poly(vinylidenefluoride), poly(acrylonitrile), poly(methylmethacrylate), poly( N -vinylpyrrolidone), poly(styrene), poly(4-vinylpyridine), poly( N -vinylcarbazole) and a polyimide were used as polymers. The film growth was studied by mass spectrometry and infrared spectroscopy. Electrochemical measurements by cyclic voltammetry served to analyze the properties of the polymer films. The morphology was determined by atomic force microscopy. Interactions of the films with phthalocyaninatozinc ( PcZn ) was analyzed for co-evaporated PcZn in the polymer films, to probe the chemical compatibility of the methods. Subsequently, evaporated PcZn or hexadecafluorophthalocyaninato-oxo-vanadium ( F 16 PcVO ) thin films were studied in detail by UV-vis spectroscopy and by electrical measurements to investigate interface formation, intermolecular coupling and electrical conduction in such films. The applicability of the different polymers as dielectric layers in organic field effect transistors, with phthalocyanines as the active semiconductor thin films, is discussed, based on their dielectric behavior and observed growth characteristics.


2014 ◽  
Vol 99 ◽  
pp. 149-159 ◽  
Author(s):  
Pradip Thakur ◽  
Arpan Kool ◽  
Biswajoy Bagchi ◽  
Sukhen Das ◽  
Papiya Nandy

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