In-situ thermal deformation measurement of low-k layer using nano-pattern recognition and correlation technique

Author(s):  
Hongbo Bi ◽  
Bongtae Han
Author(s):  
Hongbo Bi ◽  
Chris Hartsough ◽  
Bongtae Han

The foundation and technical procedure of Nano-Pattern Recognition and Correlation Technique (N-PRCT) is described. The proposed technique is an in-plane displacement measurement technique that is based on regularly oriented structures. Displacement is obtained by tracking the movement of each single pattern in the images taken before and after loading (deformation) through techniques of pattern recognition and correlation. The proposed technique is insensitive to the noise involved in the digital images which comes inherently from the SEM imaging process; this results in high measurement accuracy. The technique provides the spatial resolution of less than 5 nm/pixel and displacement measurement accuracy of approximately 0.1 nm, which will be suited ideally for thermal deformation measurements of Low-K layer.


2021 ◽  
Vol 9 ◽  
Author(s):  
R. He ◽  
L. He ◽  
B. Guan ◽  
C. M. Yuan ◽  
J. Xie ◽  
...  

Insight into the difference between the mechanical properties of rocks at low and in situ deep reservoir temperatures is vital for achieving a better understanding of fracking technologies with supercritical CO2 and liquid nitrogen. To address this issue, the fracking-related mechanical properties of the Shaximiao Formation sandstone (SS) were investigated through direct tension, uniaxial compression, and three-point bending fracture tests at a typical low temperature (Tlow) of −10°C and a reservoir temperature (Tin situ) of 70°C. The results showed that the tensile strength σt, compressive strength σc, and fracture toughness KIC of the SS were all higher at Tlow than at Tin situ, although to different extents. The KIC of the SS increased slightly more than σt at the lower temperature, while both σt and KIC of the SS increased significantly more than σc at the lower temperature. In addition to the strength, the stiffness (particularly the tensile stiffness) and the brittleness indices of SS were similarly higher at Tlow than at Tin situ. In situ monitoring using the digital image correlation technique revealed that a highly strained band (HSB) always appeared at the crack front. However, because of the inhomogeneous microstructure of the SS, the HSB did not always develop along the line connecting the notch tip to the loading point. This was a possible cause of the highly dispersed KIC values of the SS. The HSB at the crack front was notably narrower at Tlow than at Tin situ, suggesting that low temperatures suppress the plastic deformation of rocks and are therefore beneficial to reservoir stimulation.


2006 ◽  
Vol 914 ◽  
Author(s):  
Mikhail Baklanov ◽  
David O'Dwyer ◽  
Adam M Urbanowicz ◽  
Quoc Toan Le ◽  
Steven Demuynck ◽  
...  

AbstractInteraction of moisture with porous low-k films is evaluated by using in situ ellipsometry setup. The adsorbed water amount is calculated from change of refractive index measured during the adsorption. Pristine low-k films reversibly adsorb 2 - 5% of water that reflects presence of constitutive hydrophilic centrums. Plasma and thermal treatments increase the number of hydrophilic centrums. Once the amount of these centrums has reached a certain critical value sufficient to form a continuous water film, bulk water condensation is observed. Change of properties during the water adsorption in the damaged films is not fully reversible. Each additional adsorption cycle increases the dielectric function of the film because of decreasing porosity, increasing skeleton density and shrinkage. The pressure corresponding to the bulk condensation allows us to calculate internal contact angle (internal surface energy) of low-k materials. The water molecules adsorbed on separate OH groups play the role of a catalyst that hydrolyses the siloxane bridges initially present on hydrophobic surface.


2011 ◽  
Vol 31 (6) ◽  
pp. 0612005 ◽  
Author(s):  
潘兵 Pan Bing ◽  
吴大方 Wu Dafang ◽  
谢惠民 Xie Huimin ◽  
胡振兴 Hu Zhenxing

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