Low leakage current and high unipolar current density in a 4H-SiC trench gate MOSFET with integrated Schottky barrier diode
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2009 ◽
Vol 22
(9)
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pp. 751-755
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2012 ◽
Vol 725
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pp. 53-56
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2015 ◽
Vol 54
(7)
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pp. 070302
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2021 ◽
Vol 68
(3)
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pp. 1369-1373
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2020 ◽
Vol 845
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pp. 156287
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