Towards Row Sensitive DRAM Refresh through Retention Awareness

Author(s):  
Tanmay Goel ◽  
Divyansh Maura ◽  
Kaustav Goswami ◽  
Shirshendu Das ◽  
Dip Sankar Banerjee
Keyword(s):  
2016 ◽  
Vol 65 (1) ◽  
pp. 108-121 ◽  
Author(s):  
Ishwar Bhati ◽  
Mu-Tien Chang ◽  
Zeshan Chishti ◽  
Shih-Lien Lu ◽  
Bruce Jacob
Keyword(s):  

2019 ◽  
Vol 66 (8) ◽  
pp. 1391-1395 ◽  
Author(s):  
Wenjie Huang ◽  
Weiguo Tang ◽  
Junlin Chen ◽  
Lei Wang

Micromachines ◽  
2019 ◽  
Vol 10 (9) ◽  
pp. 590
Author(s):  
Wei-Kai Cheng ◽  
Po-Yuan Shen ◽  
Xin-Lun Li

Dynamic random access memory (DRAM) circuits require periodic refresh operations to prevent data loss. As DRAM density increases, DRAM refresh overhead is even worse due to the increase of the refresh cycle time. However, because of few the cells in memory that have lower retention time, DRAM has to raise the refresh frequency to keep the data integrity, and hence produce unnecessary refreshes for the other normal cells, which results in a large refresh energy and performance delay of memory access. In this paper, we propose an integration scheme for DRAM refresh based on the retention-aware auto-refresh (RAAR) method and 2x granularity auto-refresh simultaneously. We also explain the corresponding modification need on memory controllers to support the proposed integration refresh scheme. With the given profile of weak cells distribution in memory banks, our integration scheme can choose the most appropriate refresh technique in each refresh time. Experimental results on different refresh cycle times show that the retention-aware refresh scheme can properly improve the system performance and have a great reduction in refresh energy. Especially when the number of weak cells increased due to the thermal effect of 3D-stacked architecture, our methodology still keeps the same performance and energy efficiency.


Author(s):  
Deepak M. Mathew ◽  
Éder F. Zulian ◽  
Matthias Jung ◽  
Kira Kraft ◽  
Christian Weis ◽  
...  

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