Fabrication and characterization of a GaAs field emission triode for low voltage operation at atmospheric pressure

Author(s):  
D. Arslan ◽  
A. DasGupta ◽  
M. Flath ◽  
H.L. Hartnagel
1997 ◽  
Vol 71 (21) ◽  
pp. 3159-3161 ◽  
Author(s):  
A. A. G. Driskill-Smith ◽  
D. G. Hasko ◽  
H. Ahmed

1996 ◽  
Vol 424 ◽  
Author(s):  
A. G Chakhovskoi ◽  
M. E Malinowski ◽  
A. A Talin ◽  
T. E Felter ◽  
J. T. Trujillo ◽  
...  

ABSTRACTThe spectral response and outgassing characteristics of the three new, low-voltage phosphors combustion synthesized and electrophoretically deposited for application in field-emission flatpanel displays, are presented. The phosphors, forming a candidate Red-Blue-Green (RGB) triplet are YAG:Eu, YAG:Tb and Y2SiO5:Ce. These cathodoluminescent materials are tested with electron-beam excitation at currents up to 50 x03BC;A within the 200-2000V (eg. "low-voltage") and 3000-8000V (eg. "medium voltage") ranges. The spectral coordinates, as compared with industrially-manufactured P22 phosphors in low voltage operation, are reasonable; however, there is considerable difference in the green coordinates, and the red and green materials show significant satellite intensities. Phosphor outgassing, as a function of time, is measured by a residual gas analyzer at fixed 50 gA beam current in the low-voltage range. We find that after two hours of excitation, levels of outgassed CO, CO2 and H2 stabilize to low values.


2006 ◽  
Vol 88 (10) ◽  
pp. 103109 ◽  
Author(s):  
Hung Chang ◽  
Samir M. Iqbal ◽  
Eric A. Stach ◽  
Alexander H. King ◽  
Nestor J. Zaluzec ◽  
...  

2001 ◽  
Vol 685 ◽  
Author(s):  
M. Hajra ◽  
N.N. Chubun ◽  
A.G. Chakhovskoi ◽  
C.E. Hunt ◽  
K. Liu ◽  
...  

AbstractArrays of p-type silicon micro-emitters have been formed using a subtractive tip fabrication technique. Following fabrication, the emitter surface was coated with GaN nanoparticles and nanocrystalline diamond by a dielectrophoresis deposition technique. The emitters were evaluated and compared before and after the surface treatment using I-V measurements in the diode configuration. The phosphor screen, used as the anode, was spaced nominally about 70 µm from the cathode. The field emission characteristics were measured in a high vacuum chamber at a pressure range between 10−5and 10−8Torr. The results suggest that the emitters benefit from coating the surface with nanocrystalline diamond in terms of reduction in the turn on voltage, GaN coating increase the turn on voltage. Both diamond and GaN improved the emission uniformity in the region of the low voltage operation.


2015 ◽  
Vol 379 ◽  
pp. 187-193
Author(s):  
Matthew Redshaw ◽  
Anne L. Benjamin ◽  
Georg Bollen ◽  
Rafael Ferrer ◽  
David L. Lincoln ◽  
...  

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