Field Emission Characteristic of Silicon Cathodes Coated with GaN Nanoparticles

2001 ◽  
Vol 685 ◽  
Author(s):  
M. Hajra ◽  
N.N. Chubun ◽  
A.G. Chakhovskoi ◽  
C.E. Hunt ◽  
K. Liu ◽  
...  
Keyword(s):  
Field Emission ◽  
Low Voltage ◽  
High Vacuum ◽  
Nanocrystalline Diamond ◽  
Emission Characteristic ◽  
Turn On ◽  
Low Voltage Operation ◽  
Field Emission Characteristic ◽  
Before And After ◽  
P Type

AbstractArrays of p-type silicon micro-emitters have been formed using a subtractive tip fabrication technique. Following fabrication, the emitter surface was coated with GaN nanoparticles and nanocrystalline diamond by a dielectrophoresis deposition technique. The emitters were evaluated and compared before and after the surface treatment using I-V measurements in the diode configuration. The phosphor screen, used as the anode, was spaced nominally about 70 µm from the cathode. The field emission characteristics were measured in a high vacuum chamber at a pressure range between 10−5and 10−8Torr. The results suggest that the emitters benefit from coating the surface with nanocrystalline diamond in terms of reduction in the turn on voltage, GaN coating increase the turn on voltage. Both diamond and GaN improved the emission uniformity in the region of the low voltage operation.

Field Emission of Zinc Oxide Nanostructure

2003 ◽  
Vol 776 ◽  
Author(s):  
Sang Hyun Lee ◽  
SeGi Yu ◽  
Taewon Jeong ◽  
Jungna Heo ◽  
Wonseok Kim ◽  
...  
Keyword(s):  
Zinc Oxide ◽  
Field Emission ◽  
Field Enhancement ◽  
Chemical Vapor ◽  
Chemical Vapor Deposition Method ◽  
Emission Characteristic ◽  
Zinc Oxide Nanostructures ◽  
Turn On ◽  
Field Emission Characteristic ◽  
A Current

AbstractField emission characteristics were investigated for zinc oxide nanostructures which were grown on NiO catalyzed silicon (100) substrate by chemical vapor deposition method. The asgrown zinc oxide showed needle-shaped nanostructures with tip diameters of 20∼40 nm and length of 3∼5 νm. The turn-on field was found to be about 6 V/νm at a current density of 1 νA/cm2. After several field emission measurements, the turn-on field was increased up to 8.5 V/νm and the magnitude of field enhancement factor was decreased from 1190 to 940. According to SEM, the tip diameter increase of the zinc oxide to 60 nm was observed after several emission measurements. Therefore, degradation of the field emission characteristic after measurements is attributed to this deformation of the tip shape.

Energy Filtering of Schottky Field Emission Gun Using Fringe Field Monochromator

1999 ◽  
Vol 5 (S2) ◽  
pp. 646-647
Author(s):  
H.W. Mook ◽  
A.H.V. van Veen ◽  
P. Kruit
Keyword(s):  
Field Emission ◽  
Low Voltage ◽  
High Vacuum ◽  
Ultra High Vacuum ◽  
Electron Gun ◽  
Fringe Field ◽  
Objective Lens ◽  
Electronic Band ◽  
Energy Width ◽  
Energy Filtering

The energy resolution which can be attained in electron energy loss spectroscopy (EELS) is determined by the energy spread of the electron source. The energy width of a high brightness electron gun (typically 0.4 to 0.8 eV) blurs the energy spectrum. A pre-specimen energy filter or monochromator must be used to reduce the energy width of the beam below 0.1 eV to allow detailed EELS analysis of the electronic band structures in materials. The monochromator can not only improve EELS, but it is also capable of improving the spatial resolution in low voltage SEM, which is limited by the chromatic blur of the objective lens. A new type of monochromator the Fringe Field Monochromator has been designed and experiments in an ultra high vacuum setup show the monochromatisation of a Schottky Field Emission Gun.

The Effect of Ion Implantation on Field Emission Property of Nanodiamond Films

2008 ◽  
Vol 8 (8) ◽  
pp. 4141-4145 ◽  
Author(s):  
Huang-Chin Chen ◽  
Umesh Palnitkar ◽  
Huan Niu ◽  
Hsiu-Fung Cheng ◽  
I-Nan Lin
Keyword(s):  
Ion Implantation ◽  
Field Emission ◽  
Structural Damage ◽  
Microwave Plasma ◽  
Chemical Vapor ◽  
Nanocrystalline Diamond ◽  
Emission Measurement ◽  
Before And After ◽  
Nitrogen Ions ◽  
Nitrogen Ion

Nanocrystalline diamond films prepared by microwave plasma enhanced chemical vapor deposition (MPECVD) were implanted using 110 keV nitrogen ions under fluence ranging from 1013–1014 ions/cm2. Scanning Electron Microscopy (SEM) and Raman spectroscopy were used to analyze the changes in the surface of the films before and after ion implantation. Results show that with nitrogen ion implantation in nanocrystalline diamond film cause to decrease in diamond crystallinity. The field emission measurement shows a sharp increase in current density with increase in dose. The ion implantation also alters the turn on field. It is observed that the structural damage caused by ion implantation plays a significant role in emission behaviour of nanocrystalline diamonds.

Improved field emission characteristic of carbon nanotubes by an Ag micro-particle intermediation layer

2008 ◽  
Vol 39 (5) ◽  
pp. 782-785 ◽  
Author(s):  
Wenhui Lu ◽  
Hang Song ◽  
Yixin Jin ◽  
Haifeng Zhao ◽  
Zhiming Li ◽  
...  
Keyword(s):  
Carbon Nanotubes ◽  
Field Emission ◽  
Emission Characteristic ◽  
Field Emission Characteristic

The Effect of Field Emission Characteristic on Partial Arc Caused by Pollutant and Water

2014 ◽  
Vol 986-987 ◽  
pp. 114-118
Author(s):  
Dong Ming Liu ◽  
Fu Sheng Guo ◽  
Wen Xia Sima
Keyword(s):  
Flat Plate ◽  
Field Emission ◽  
Copper Electrode ◽  
Emission Characteristic ◽  
Plate Model ◽  
Emission Properties ◽  
Field Emission Properties ◽  
Important Impact ◽  
Field Emission Characteristic ◽  
Development Mechanism

A flat plate model are employed to investigate the development mechanism of the initial electrons along the insulation surface in this paper, and the field emission properties of pollutant (NaCl) and water (H2O) adsorbed on the copper electrode are studied. The voltage when partial arc occurs is computed and a flat plate experiment is carried out to validate the computing results. Results indicate that pollutant and water have an important impact on the field emission, where pollutant is more significant than water. Meanwhile, the pollutant and water can increase the probability to form the partial arc.

Experimental Preparation and Properties of Modified CNT Field Emitters for the Field Emission Display Panel

2010 ◽  
Vol 148-149 ◽  
pp. 1327-1330
Author(s):  
Hui Li ◽  
Xiao Gang Zhou ◽  
Chao Yuan ◽  
Gen Sheng Dou
Keyword(s):  
Field Emission ◽  
Indium Tin Oxide ◽  
Low Cost ◽  
Emission Characteristic ◽  
Display Device ◽  
Field Emission Display ◽  
Image Brightness ◽  
Field Emission Characteristic ◽  
Cnt Field Emitter ◽  
Photolithography Process

Carbon nanotube used as the cathode material, the diode-type field emission display panel was developed with low-cost screen-printing method and precise photolithography process. The modified CNT field emitter was fabricated for improving the field emission characteristic, and the detailed fabrication process was also presented. The indium-tin-oxide film on the cathode back-plane was divided to form the CNT cathode electrode, and the insulation slurry was screen-printed to form the insulation layer. Field emission characteristic of whole display device was measured. The sealed field emission display panel showed good emission properties and high display image brightness.

Sign in / Sign up

Export Citation Format

Share Document