High Aspect Ratio Contact Profile Control and Cryogenic Etch Process

2021 ◽  
Author(s):  
Jie Luo ◽  
Jingheng Meng ◽  
Baodong Han ◽  
Hongbo Sun ◽  
Deyuan Xiao ◽  
...  
Keyword(s):  
Aspect Ratio ◽  
High Aspect Ratio ◽  
Profile Control

scholarly journals Etch profile control of high-aspect ratio deep submicrometer α-Si gate etch

2001 ◽  
Vol 14 (3) ◽  
pp. 242-254 ◽  
Author(s):  
Hyun-Mog Park ◽  
D.S. Grimard ◽  
J.W. Grizzle ◽  
F.L. Terry
Keyword(s):  
Aspect Ratio ◽  
High Aspect Ratio ◽  
Profile Control ◽  
Deep Submicrometer ◽  
Etch Profile

A Two-Step Spacer Etch for High-Aspect-Ratio Gate Stack Process

2000 ◽  
Vol 611 ◽  
Author(s):  
Chien Yu ◽  
Rich Wise ◽  
Anthony Domenicucci
Keyword(s):  
Aspect Ratio ◽  
High Aspect Ratio ◽  
Gate Stack ◽  
Methyl Fluoride ◽  
Thermal Oxide ◽  
Profile Control ◽  
The Stability ◽  
Better Than

ABSTRACTA highly selective nitride etch was developed for gate stack spacer process in advanced memory programs. Based on methyl fluoride chemistry with better than 8:1 selectivity of nitride:oxide, this process exhibits minimal erosion to the underlying RTO thermal oxide for consistent diffusion ion-implant control. As the groundrule changed to 0.175um and below, a two-step etch scheme was employed to maintain the profile control in high-aspect-ratio structures. The stability and repeatability of the process is demonstrated in the SPC chart of the post etch FTA site measurement.

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