Cryogenic etch process development for profile control of high aspect-ratio submicron silicon trenches

2007 ◽  
Vol 25 (1) ◽  
pp. 21 ◽  
Author(s):  
Marcel W. Pruessner ◽  
William S. Rabinovich ◽  
Todd H. Stievater ◽  
Doewon Park ◽  
Jeffrey W. Baldwin
Keyword(s):  
Aspect Ratio ◽  
High Aspect Ratio ◽  
Process Development ◽  
Profile Control ◽  
Silicon Trenches

scholarly journals Etch profile control of high-aspect ratio deep submicrometer α-Si gate etch

2001 ◽  
Vol 14 (3) ◽  
pp. 242-254 ◽  
Author(s):  
Hyun-Mog Park ◽  
D.S. Grimard ◽  
J.W. Grizzle ◽  
F.L. Terry
Keyword(s):  
Aspect Ratio ◽  
High Aspect Ratio ◽  
Profile Control ◽  
Deep Submicrometer ◽  
Etch Profile

A Two-Step Spacer Etch for High-Aspect-Ratio Gate Stack Process

2000 ◽  
Vol 611 ◽  
Author(s):  
Chien Yu ◽  
Rich Wise ◽  
Anthony Domenicucci
Keyword(s):  
Aspect Ratio ◽  
High Aspect Ratio ◽  
Gate Stack ◽  
Methyl Fluoride ◽  
Thermal Oxide ◽  
Profile Control ◽  
The Stability ◽  
Better Than

ABSTRACTA highly selective nitride etch was developed for gate stack spacer process in advanced memory programs. Based on methyl fluoride chemistry with better than 8:1 selectivity of nitride:oxide, this process exhibits minimal erosion to the underlying RTO thermal oxide for consistent diffusion ion-implant control. As the groundrule changed to 0.175um and below, a two-step etch scheme was employed to maintain the profile control in high-aspect-ratio structures. The stability and repeatability of the process is demonstrated in the SPC chart of the post etch FTA site measurement.

Methodologies for Quantifying FIB “Milling Acuity”

2009 ◽  
Author(s):  
Chad Rue
Keyword(s):  
Aspect Ratio ◽  
Real World ◽  
High Aspect Ratio ◽  
Process Development ◽  
Spot Size ◽  
Performance Tests ◽  
Imaging Resolution ◽  
Measuring Scheme ◽  
Column Performance

Abstract FIB column performance can be difficult to evaluate, and the traditional metrics of imaging resolution and minimum spot size give little indication of how a FIB system will perform its intended daily tasks. A series of supplemental FIB performance tests is proposed to quantify “milling acuity” under real-world conditions. A quantitative measuring scheme for evaluating the quality of High Aspect Ratio (HAR) vias is proposed, and an example is shown in which the HAR measuring scheme can be used for process development.

Etching High Aspect Ratio Silicon Trenches

2003 ◽  
Vol 150 (10) ◽  
pp. G612 ◽  
Author(s):  
Siddhartha Panda ◽  
Rajiv Ranade ◽  
G. Swami Mathad
Keyword(s):  
Aspect Ratio ◽  
High Aspect Ratio ◽  
Silicon Trenches
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