scholarly journals Surfactant enhanced solid phase epitaxy of Ge/CaF2/Si(111): Synchrotron x-ray characterization of structure and morphology

2011 ◽  
Vol 110 (10) ◽  
pp. 102205 ◽  
Author(s):  
J. Wollschläger ◽  
C. Deiter ◽  
C. R. Wang ◽  
B. H. Müller ◽  
K. R. Hofmann
Keyword(s):  
Solid Phase ◽  
Solid Phase Epitaxy ◽  
X Ray ◽  
Structure And Morphology

Synthesis and Characterization of Multiferroic NiFe2O4/BiFeO3 Nanocomposites by Modified Pechini Method

2011 ◽  
Vol 197-198 ◽  
pp. 456-459
Author(s):  
Xian Ming Liu ◽  
Wen Liang Gao
Keyword(s):  
Pechini Method ◽  
Synthesis And Characterization ◽  
X Ray Diffraction ◽  
Magnetic Bias ◽  
Field Frequency ◽  
Magnetic Field Frequency ◽  
X Ray ◽  
Structure And Morphology ◽  
Modified Pechini Method

Spinel-perovskite multiferroics of NiFe2O4/BiFeO3 nanoparticles were prepared by modified Pechini method. The structure and morphology of the composites were examined by means of X-ray diffraction (XRD) and scanning electron microscopy (SEM). The results showed that the composites consisted of spinel NiFe2O4 and perovskite BiFeO3 after annealed at 700°C for 2h, and the particle size ranges from 40 to 100nm. VSM and ME results indicated that the nanocomposites exhibited both tuning magnetic properties and a ME effect. The ME effect of the nanocomposites strongly depended on the magnetic bias and magnetic field frequency.

GROWTH AND CHARACTERIZATION OF EPITAXIAL Si/CoSi2 AND Si/CoSi2/Si HETEROSTRUCTURES

1985 ◽  
Vol 56 ◽  
Author(s):  
B.D. HUNT ◽  
N. LEWIS ◽  
E.L. HALL ◽  
L.G. JTURNER ◽  
L.J. SCHOWALTER ◽  
...  
Keyword(s):  
Surface Roughness ◽  
Growth Temperature ◽  
Molecular Beam ◽  
Solid Phase ◽  
Solid Phase Epitaxy ◽  
Cross Sectional ◽  
Reactive Deposition ◽  
Ion Channeling ◽  
Formation Method

AbstractThin (<200Å), epitaxial CoSi2 films have been grown on (111) Siwafers in a UHV system using a variety of growth techniques including solid phase epitaxy (SPE), reactive deposition epitaxy (RDE), and molecular beam epitaxy (MBE). SEN and TEN studies reveal significant variations in the epitaxial silicide surface morphology as a function of the sillciqd formation method. Pinhole densities are generally greater than 107 cm-2, although some reduction can be achieved by utilizing proper growth techniques. Si epilayers were deposited over the CoSi2 films inthe temperature range from 550ºC to 800ºC, and the reesuulttinng structures have been characterized using SEM, cross—sectional TEN, and ion channeling measurements. These measurements show that the Si epitaxial quality increases with growth temperature, although the average Si surface roughness and the CoSi2 pinhole density also increase as the growth temperature is raised.

Optimising the Growth of Few-Layer Graphene on Silicon Carbide by Nickel Silicidation

2013 ◽  
Vol 740-742 ◽  
pp. 121-124 ◽  
Author(s):  
Enrique Escobedo-Cousin ◽  
Konstantin Vassilevski ◽  
Toby Hopf ◽  
Nick G. Wright ◽  
Anthony O’Neill ◽  
...  
Keyword(s):  
Photoelectron Spectroscopy ◽  
Solid Phase ◽  
Sample Surface ◽  
Device Fabrication ◽  
Solid Phase Epitaxy ◽  
X Ray ◽  
Graphene Films ◽  
Few Layer Graphene ◽  
The Impact

Few-layers graphene films (FLG) were grown by local solid phase epitaxy on a semi-insulating 6H-SiC substrate by annealing Ni films deposited on the Si and C-terminated faces of the SiC. The impact of the annealing process on the final quality of the FLG films is studied using Raman spectroscopy. X-ray photoelectron spectroscopy was used to verify the presence of graphene on the sample surface. We also demonstrate that further device fabrication steps such as dielectric deposition can be carried out without compromising the FLG films integrity.

Synthesis and characterization of the solid uranium(VI) dioxo-diacetohydroxamate complex

2007 ◽  
Vol 95 (8) ◽  
Author(s):  
Cynthia-May S. Gong ◽  
Frédéric Poineau ◽  
Kenneth R. Czerwinski
Keyword(s):  
Solid Phase ◽  
Uranyl Acetate ◽  
Proton Nuclear Magnetic Resonance ◽  
Acetohydroxamic Acid ◽  
Acetate Dihydrate ◽  
Reaction Conditions ◽  
X Ray ◽  
Ft Ir ◽  
X Ray Absorption

A novel dry synthesis for the uranium(VI) dioxo-diacetohydroxamate (UAHA) complex has been developed. The complex was generated in >80% yield by mechanically grinding solid uranyl acetate dihydrate (UAc) with solid acetohydroxamic acid in stoichiometric amounts. The resulting UOThe UAHA solid was extensively characterized by ultraviolet-visible (UV-vis), Fourier-transform infrared (FT-IR), and extended X-ray absorption fine structure (EXAFS) spectroscopies. The compound did not fluoresce after laser excitation. Proton nuclear magnetic resonance (NMR) spectra were obtained of the complex in DThe easy synthesis and purification of UAHA enables researchers to strictly control reaction conditions; to eliminate interfering salts and water; and to study the complex in the solid-phase.

Preparation and Characterization of PCL/PVP Blend Membrane

2011 ◽  
Vol 311-313 ◽  
pp. 1638-1641
Author(s):  
Jun Hua Wang ◽  
Xiang Biao Cheng ◽  
Gang Huang ◽  
Feng Chun Dong ◽  
Yong Tang Jia
Keyword(s):  
Mechanical Property ◽  
Membrane Structure ◽  
Solution Method ◽  
X Ray Diffraction ◽  
Scanning Calorimetry ◽  
Blend Membrane ◽  
X Ray ◽  
Structure And Morphology ◽  
Xrd Techniques

PCL/PVP blend membrane was prepared by casting solution method. Scanning electron microscopy (SEM), diffraction scanning calorimetry (DSC), and X-ray diffraction (XRD) techniques were employed to characterize membrane structure and morphology. Moreover, the hydrophilicity, mechanical property and biodegradability of membranes were investigated. Due to introducing PVP, the crystallinity and mechanical property of PCL altered to some extent. The hydrophilicity of the blend membrane improved remarkably with increasing PVP content, which was expressed by the contact angle declining and the rate of water absorption increasing. Lipase accelerated the degradation rate of PCL/PVP membrane.

Structural Characterization of Ion Beam Enhanced Solid Phase Epitaxial Regrowth by Raman, RBS, and X-Ray Analysis

1988 ◽  
Vol 126 ◽  
Author(s):  
John F. Knudsen ◽  
R. C. Bowman ◽  
P. M. Adams ◽  
R. Newman ◽  
J. P. Hurrell ◽  
...  
Keyword(s):  
Solid Phase ◽  
Ion Beam ◽  
Beam Current ◽  
Crystalline Quality ◽  
X Ray Diffraction ◽  
X Ray ◽  
Epitaxial Regrowth ◽  
High Beam Current

ABSTRACTEpitaxial regrowth of deposited amorphous silicon has been previously described utilizing ion implantation amorphization, ion mixing and thermal anneal. This paper evaluates the effects of these process steps on crystalline quality utilizing Rutherford Backscattering (RBS), x-ray diffraction rocking curves and Raman scattering.In situ (during implantation) regrowth results in defective crystallinity. In contrast, when there is no in situ regrowth, the post anneal crystallinity is equivalent by RBS and x-ray evaluation to virgin single crystal wafers. In situ regrowth is most pronounced during the high beam current ion mixing type implants which produce wafer temperatures of about 250°C. The final crystalline quality which results from different sequences of amorphization and ion mixing implants, is strongly dependent upon the amount of in situ regrowth which has occurred. The greater the in situ regrowth the poorer the final crystalline quality.

scholarly journals Synthesis and Characterization of a New Aluminosilicate Molecular Sieve from Aluminosilica Perhydrate Hydrogel

Materials ◽  
2020 ◽  
Vol 13 (23) ◽  
pp. 5469
Author(s):  
Haiqiang Ma ◽  
Kun Jiao ◽  
Xiangyu Xu ◽  
Jiaqing Song
Keyword(s):  
Molecular Sieves ◽  
Molecular Sieve ◽  
Critical Factor ◽  
Synthesis And Characterization ◽  
X Ray ◽  
Cell Parameters ◽  
Structure And Morphology ◽  
Novel Structure ◽  
Pure Phase

A novel structure aluminosilicate molecular sieve, named BUCT-3, was prepared by dynamic hydrothermal synthesis, and the critical factor to obtain the new structure is using an active silicon and aluminum source, aluminosilica perhydrate hydrogel. Meanwhile, only high content of O-O bonds can ensure the pure phase of BUCT-3. Through the characterization of x-ray powder diffraction (XRD), Fourier transform infrared spectra (FTIR), scanning electron microscopy (SEM), and so on, some structure and morphology information of BUCT-3 molecular sieves as well as the special silicon and aluminum source was obtained. It’s worth noticing that the O-O bonds of reactants can be reserved in the products, and thus, help us to get a new structure with cell parameters a = 8.9645 Å, b = 15.2727 Å, c = 11.3907 Å, α = 90°, β = 93.858°, γ = 90°. The crystal system is monoclinic. Though the thermostability of BUCT-3 is not satisfactory, its potential application derived from O-O bonds cannot be neglected.

Electrical Activation of Heavily Doped Arsenic Implanted Silicon

1988 ◽  
Vol 128 ◽  
Author(s):  
J. Said ◽  
H. Jaouen ◽  
G. Ghibaudo ◽  
I. Stoemenos ◽  
P. Zaumseil
Keyword(s):  
Solid Phase ◽  
Electrical Activation ◽  
Activation Process ◽  
Solid Phase Epitaxy ◽  
X Ray Diffraction ◽  
Electrical Transmission ◽  
X Ray ◽  
Defect Migration ◽  
Transmission Electron ◽  
Heavily Doped

ABSTRACTThe combination of electrical, Transmission Electron Microscopy and Triple Crystal X-ray Diffraction measurements allow us to separate the existence of a local impurity activation process from the amorphous- crystal transformation. The local process occurs in the highly damaged surface layer induced by the arsenic implantation and is efficient well below the Solid Phase Epitaxy transition temperature. It is suggested that point defect migration should play an important role in the electrical impurity activation at low annealing temperatures.

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