Characterizations of a Proposed 3300-V Press-Pack IGBT Module Using Nanosilver Paste for High-Voltage Applications

2018 ◽  
Vol 6 (4) ◽  
pp. 2245-2253 ◽  
Author(s):  
Jingjing Feng ◽  
Yunhui Mei ◽  
Xianbin Li ◽  
Guo-Quan Lu
Keyword(s):  
High Voltage ◽  
Igbt Module ◽  
Nanosilver Paste

A Multichip Phase-Leg IGBT Module Bonded by Pressureless Sintering of Nanosilver Paste

2017 ◽  
Vol 17 (1) ◽  
pp. 146-156 ◽  
Author(s):  
Shancan Fu ◽  
Yunhui Mei ◽  
Xin Li ◽  
Changsheng Ma ◽  
Guo-Quan Lu
Keyword(s):  
Pressureless Sintering ◽  
Igbt Module ◽  
Nanosilver Paste

scholarly journals Electric Field Analysis of Press-Pack IGBTs

2018 ◽  
Vol 64 ◽  
pp. 04006
Author(s):  
Tang Xinling ◽  
Pan Yan ◽  
Chen Yanfang ◽  
Fu Pengyu ◽  
Zhao Zhibin
Keyword(s):  
Electric Field ◽  
High Voltage ◽  
Failure Modes ◽  
Power Transmission ◽  
Electrical Insulation ◽  
Field Analysis ◽  
Insulation Failure ◽  
Igbt Module ◽  
The Press ◽  
Electric Field Analysis

High voltage IGBT module is the ideal option for the VSC-HVDC power transmission application. At present, wire-bonded technology and press-pack technology are available packaging technologies for high voltage IGBT. The press-pack IGBTs have such advantages as low inductance, low thermal impedance and short circuit failure mode than the wire-bonded IGBT module, which especially suit for high voltage power transmission application by series connection. However, the electrical insulation failure modes of press-pack IGBTs are much less known with limited literature published. In this paper, we presented the electric field analysis of a 3D press-pack IGBT model under DC rating voltage test condition. The electric field distribution of the press-pack IGBT stack was solved as an electrostatic problem by employing the finite element method. The results revealed the potential electrical insulation failure modes of the press-pack IGBTs: corona discharge at the edge of silver plate, partial discharge at the micro gap between die and PEEK frame and creeping discharge at the surface of PEEK frame.

A Novel Half Bridge Drive Circuit Applied in IGBT Module

2014 ◽  
Vol 635-637 ◽  
pp. 1181-1186
Author(s):  
Qiu Yan Wang ◽  
Yan Liu ◽  
Ping Xu ◽  
Da Cheng Luo
Keyword(s):  
Diesel Engine ◽  
High Voltage ◽  
Power Supply ◽  
High Performance ◽  
Practical Application ◽  
Igbt Module ◽  
Driver Circuit ◽  
Protection Circuits ◽  
Drive Circuit ◽  
Special Protection

A high performance and high voltage half-bridge novel IGBT driver circuit is described in this paper. The module integrates dual insulated driving and special protection circuits. It has high push-pull driving capability, bootstrap power supply technology and is easy for inverter miniature design. The paper also introduces the application in portable diesel engine generator and discusses some attention items in practical application. Experimental results show that this driving module has better performance and can reliably drive and protect IGBT.

Characterization of high-voltage IGBT module degradations under PWM power cycling test at high ambient temperature

2010 ◽  
Vol 50 (9-11) ◽  
pp. 1810-1814 ◽  
Author(s):  
M. Tounsi ◽  
A. Oukaour ◽  
B. Tala-Ighil ◽  
H. Gualous ◽  
B. Boudart ◽  
...  
Keyword(s):  
Ambient Temperature ◽  
High Voltage ◽  
High Ambient Temperature ◽  
Cycling Test ◽  
Power Cycling ◽  
Igbt Module
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