Design and Validation of A 250-kW All-Silicon Carbide High-Density Three-Level T-Type Inverter

2020 ◽  
Vol 8 (1) ◽  
pp. 578-588 ◽  
Author(s):  
Zhongjing Wang ◽  
Yuheng Wu ◽  
Mohammad Hazzaz Mahmud ◽  
Zhe Zhao ◽  
Yue Zhao ◽  
...  
Keyword(s):  
Silicon Carbide ◽  
High Density

Performance of high-density cast silicon carbide in the extreme ultraviolet

1997 ◽  
Vol 36 (19) ◽  
pp. 4409 ◽  
Author(s):  
Ritva A. M. Keski-Kuha ◽  
Charles M. Fleetwood ◽  
Joseph Robichaud
Keyword(s):  
Silicon Carbide ◽  
Extreme Ultraviolet ◽  
High Density

Evaluation of Yttria Coated High Density Graphite with Silicon Carbide Interlayer for Uranium Melting Applications

2019 ◽  
Vol 45 (9) ◽  
pp. 11694-11702 ◽  
Author(s):  
B. Madhura ◽  
E. Vetrivendan ◽  
Ch. Jagadeeswara Rao ◽  
P. Venkatesh ◽  
S. Ningshen
Keyword(s):  
Silicon Carbide ◽  
High Density ◽  
Density Graphite

X-ray topographic dislocation contrast visible in reflections orthogonal to the Burgers vectors of axial screw dislocations in hexagonal silicon carbide

2001 ◽  
Vol 34 (1) ◽  
pp. 20-26 ◽  
Author(s):  
W. M. Vetter ◽  
M. Dudley
Keyword(s):  
Silicon Carbide ◽  
Electron Microscope ◽  
Basal Plane ◽  
High Density ◽  
Screw Dislocations ◽  
X Ray ◽  
Apparent Violation ◽  
Light Contrast

Contrast is associated with micropipes in X-ray topographs of SiC crystals obtained with prismatic reflections, representing an apparent violation of theg·b= 0 invisibility criterion. This is explained as a population of basal-plane dislocations with Burgers vectors of the setb= {\textstyle{1 \over 3}}〈11{\bar{2}}0〉 that occur in a high density within a few micrometers of the micropipes, below the resolution of X-ray topography. These basal-plane dislocations could be observed under an electron microscope. The presence of the surfaces of the micropipes influences the dislocation images in the topographs taken with prismatic reflections, often resulting in a band of light contrast along the axes of the micropipes.

Formation of high-density structure of self-bonded silicon carbide

2009 ◽  
Vol 31 (1) ◽  
pp. 12-23 ◽  
Author(s):  
A. L. Maystrenko ◽  
V. G. Kulich ◽  
V. N. Tkach
Keyword(s):  
Silicon Carbide ◽  
High Density ◽  
Density Structure

High-density amorphous phase of silicon carbide obtained under large plastic shear and high pressure

2012 ◽  
Vol 85 (5) ◽  
Author(s):  
Valery I. Levitas ◽  
Yanzhang Ma ◽  
Emre Selvi ◽  
Jianzhe Wu ◽  
John A. Patten
Keyword(s):  
Silicon Carbide ◽  
High Pressure ◽  
Amorphous Phase ◽  
High Density ◽  
Plastic Shear

High-Density Ceramic Materials on the Basis of Silicon Carbide

2013 ◽  
Vol 592-593 ◽  
pp. 397-400
Author(s):  
Dinara Sultanovna Dallaeva ◽  
Gulnara Darvinovna Kardashova ◽  
Gadjimet Kerimovich Safaraliev ◽  
Pavel Tománek
Keyword(s):  
Solid Solution ◽  
Silicon Carbide ◽  
Electron Microscope ◽  
Scanning Electron Microscope ◽  
Aluminum Nitride ◽  
Hot Pressing ◽  
Manufacturing Process ◽  
Ceramic Materials ◽  
High Density ◽  
Scanning Electron

This study describes the principles of synthesis and technological features of composition ceramics formation on the basis of silicon carbide and aluminum nitride by hot-pressing. The structural properties and composition of the ceramics were investigated by scanning electron microscope and the formation of the solid solution is confirmed. The elements distribution on the surface of failure pattern is shown. The results of the study are useful for optimization of manufacturing process of structural and functional high-density ceramics.

Sign in / Sign up

Export Citation Format

Share Document