Increasing the saturated output RF power for RF amplifiers using a passive technique

2015 ◽  
Author(s):  
Basim ALkhateeb ◽  
Anwar AL-Assaf ◽  
Ahmad ALMousa ◽  
Adnan Ishtay
Keyword(s):  
Rf Power ◽  
Rf Amplifiers ◽  
Passive Technique

Investigation of ultra-thin films of YBa2Cu3O7−δ grown on MgO

1990 ◽  
Vol 48 (4) ◽  
pp. 6-7
Author(s):  
S.K. Streiffer ◽  
C.B. Eom ◽  
J.C. Bravman ◽  
T.H. Geballet
Keyword(s):  
Thin Films ◽  
Room Temperature ◽  
Deposition Process ◽  
Nucleation And Growth ◽  
Multilayer Structures ◽  
Rf Power ◽  
Oxygen Loss ◽  
Transmission Electron ◽  
Single Target ◽  
Mtorr Argon

The study of very thin (<15 nm) YBa2Cu3O7−δ (YBCO) films is necessary both for investigating the nucleation and growth of films of this material and for achieving a better understanding of multilayer structures incorporating such thin YBCO regions. We have used transmission electron microscopy to examine ultra-thin films grown on MgO substrates by single-target, off-axis magnetron sputtering; details of the deposition process have been reported elsewhere. Briefly, polished MgO substrates were attached to a block placed at 90° to the sputtering target and heated to 650 °C. The sputtering was performed in 10 mtorr oxygen and 40 mtorr argon with an rf power of 125 watts. After deposition, the chamber was vented to 500 torr oxygen and allowed to cool to room temperature. Because of YBCO’s susceptibility to environmental degradation and oxygen loss, the technique of Xi, et al. was followed and a protective overlayer of amorphous YBCO was deposited on the just-grown films.

Analysis of Sputtered Zinc Oxide Films

1980 ◽  
Vol 38 ◽  
pp. 416-417
Author(s):  
T. A. Emma ◽  
M. P. Singh
Keyword(s):  
Electron Microscopy ◽  
Zinc Oxide ◽  
Piezoelectric Materials ◽  
Oxide Films ◽  
Optical Quality ◽  
Zno Films ◽  
Rf Power ◽  
X Ray Diffraction ◽  
Sputtered Films ◽  
Zinc Oxide Films

Optical quality zinc oxide films have been characterized using reflection electron diffraction (RED), replication electron microscopy (REM), scanning electron microscopy (SEM), and X-ray diffraction (XRD). Significant microstructural differences were observed between rf sputtered films and planar magnetron rf sputtered films. Piezoelectric materials have been attractive for applications to integrated optics since they provide an active medium for signal processing. Among the desirable physical characteristics of sputtered ZnO films used for this and related applications are a highly preferred crystallographic texture and relatively smooth surfaces. It has been found that these characteristics are very sensitive to the type and condition of the substrate and to the several sputtering parameters: target, rf power, gas composition and substrate temperature.

The Measurements of Natural Radioactivity, (Radon and Gamma concentrations), around the old fertilizer factory in Basrah/Iraq

2015 ◽  
Vol 7 (1) ◽  
pp. 1324-1335
Author(s):  
Jabbar H. Jebur
Keyword(s):  
Effective Dose ◽  
Radon Concentration ◽  
Gamma Ray ◽  
Annual Effective Dose ◽  
Track Detector ◽  
Exhalation Rate ◽  
Hazard Indices ◽  
Radium Equivalent ◽  
Passive Technique ◽  
Radium Activity

Radon concentration, exhalation rate, annual effective dose, radium activity, thorium, uranium potassium and radium equivalent have been measured in the present investigation for soil in the area around the old fertilizer factory in southern of Basrah Governorate. The measurements based on CR39 track detector for passive method, RAD7 for active method and NaI(Tl) for gamma concentration measurements. Average values for radon concentration in soil were 112.04±10.76 Bq/m3 using passive technique and 104.56±6.05 Bq/m3 using RAD7. From the result of the passive technique, area and mass exhalation rates and the annual effective dose were calculated. Gamma ray spectroscopy for the soil samples were performed and found that the average concentrations of 226Ra, 232Th and 40K were 50.89 Bq/kg, 21.74 Bq/kg and 640.4 Bq/kg respectively. Gamma ray hazard indices were calculated and found they are within the world average.

Terahertz Radiators Based on Si~3C-SiC MQW IMPATT Diodes

2020 ◽  
Vol 10 (4) ◽  
pp. 501-506
Author(s):  
Monisha Ghosh ◽  
Arindam Biswas ◽  
Aritra Acharyya
Keyword(s):  
High Frequency ◽  
Multiple Quantum Well ◽  
Multiple Quantum ◽  
Noise Performance ◽  
Rf Power ◽  
Drift Diffusion ◽  
Frequency Bands ◽  
Atmospheric Window ◽  
Lower Noise ◽  
Impatt Diodes

Aims:: The potentiality of Multiple Quantum Well (MQW) Impacts Avalanche Transit Time (IMPATT) diodes based on Si~3C-SiC heterostructures as possible terahertz radiators have been explored in this paper. Objective:: The static, high frequency and noise performance of MQW devices operating at 94, 140, and 220 GHz atmospheric window frequencies, as well as 0.30 and 0.50 THz frequency bands, have been studied in this paper. Methods: The simulation methods based on a Self-Consistent Quantum Drift-Diffusion (SCQDD) model developed by the authors have been used for the above-mentioned studies. Results: Thus the noise performance of MQW DDRs will be obviously better as compared to the flat Si DDRs operating at different mm-wave and THz frequencies. Conclusion:: Simulation results show that Si~3C-SiC MQW IMPATT sources are capable of providing considerably higher RF power output with the significantly lower noise level at both millimeter-wave (mm-wave) and terahertz (THz) frequency bands as compared to conventional flat Si IMPATT sources.

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