Surface-Tension Driven Heterogeneous Integration of Thin Film Photonic Devices Using Micro-Contact Printing for Multi-Material Photonic Integrated Circuits

2011 ◽  
Vol 29 (10) ◽  
pp. 1578-1582 ◽  
Author(s):  
Jing Xiao ◽  
Fuchuan Song ◽  
Sang-Woo Seo
Optica ◽  
2016 ◽  
Vol 3 (5) ◽  
pp. 531 ◽  
Author(s):  
Lin Chang ◽  
Yifei Li ◽  
Nicolas Volet ◽  
Leiran Wang ◽  
Jon Peters ◽  
...  

1994 ◽  
Vol 358 ◽  
Author(s):  
G.S. Tompa ◽  
D.C. Morton ◽  
B.S. Sywe ◽  
Y. Lu ◽  
E.W. Forsythe ◽  
...  

ABSTRACTThe demonstration of photoluminescence (PL) and electroluminescence (EL) in nanostructures of Si or Ge, such as those found in porous silicon, has significantly improved the prospects of all Si based photonic devices. While the physical mechanisms at work are still a subject of much study, it is clear that the luminescence is associated with the formation of nanometer or “quantum” sized particles. Further, it is clear that prototype NanoCrystal Displays (NCDs) and communication devices are being fabricated in these material systems. We report here on the electroluminescent properties of nanometer sized particles in an SiO2 host matrix, which were fabricated by LPCVD techniques. The films have demonstrated reproducible emission from well below 400 nm to well above 800 nm. We believe that dispersion effects of the nanocrystals can account for "white" light emission. The films have been characterized using PL, Raman, XRD, TEM, and SIMS. The nanocrystals are primarily in the 2-7 nm range although larger crystal clusters are also observed. The development of stable and efficient Si or Ge nanocrystalline EL based devices could find applications in lamps/LEDs, photonic integrated circuits, and displays.


Author(s):  
Hyundai Park ◽  
Brian R. Koch ◽  
Erik J. Norberg ◽  
Jonathon E. Roth ◽  
Byungchae Kim ◽  
...  

2017 ◽  
Vol 42 (4) ◽  
pp. 803 ◽  
Author(s):  
Lin Chang ◽  
Martin H. P. Pfeiffer ◽  
Nicolas Volet ◽  
Michael Zervas ◽  
Jon D. Peters ◽  
...  

2012 ◽  
Vol 60 (4) ◽  
pp. 683-689
Author(s):  
R. Piramidowicz ◽  
S. Stopiński ◽  
K. Ławniczuk ◽  
K. Welikow ◽  
P. Szczepański ◽  
...  

Abstract In this work a brief review on photonic integrated circuits (PICs) is presented with a specific focus on integrated lasers and amplifiers. The work presents the history of development of the integration technology in photonics and its comparison to microelectronics. The major part of the review is focused on InP-based photonic integrated circuits, with a short description of the potential of the silicon technology. A completely new way of fabrication of PICs, called generic integration technology, is presented and discussed. The basic assumption of this approach is the very same as in the case of electronic circuits and states that a limited set of standard components, both active and passive, enables designing of a complex, multifunctional PIC of every type. As a result, functionally advanced, compact, energy efficient and cost-optimized photonic devices can be fabricated. The work presents also selected examples of active PICs like multiwavelength laser sources, discretely tunable lasers, WDM transmitters, ring lasers etc.


2011 ◽  
Vol 19 (27) ◽  
pp. 26936 ◽  
Author(s):  
Gyungock Kim ◽  
Jeong Woo Park ◽  
In Gyoo Kim ◽  
Sanghoon Kim ◽  
Sanggi Kim ◽  
...  

Sign in / Sign up

Export Citation Format

Share Document