Vibration Mode Suppression in Micromechanical Resonators Using Embedded Anti-Resonating Structures

Author(s):  
Jia-Ren Liu ◽  
Chun-Pu Tsai ◽  
Wun-Ruei Du ◽  
Ting-Yi Chen ◽  
Jung-San Chen ◽  
...  
Author(s):  
Ali Kutay ◽  
Kilsoo Kim ◽  
Jonathan Muse ◽  
Anthony Calise ◽  
Rajeev Chandramohan

Materials ◽  
2021 ◽  
Vol 14 (3) ◽  
pp. 567
Author(s):  
Łukasz Żmuda-Trzebiatowski ◽  
Piotr Iwicki

The paper examines effectiveness of the vibration correlation technique which allows determining the buckling or limit loads by means of measured natural frequencies of structures. A steel silo segment with a corrugated wall, stiffened with cold-formed channel section columns was analysed. The investigations included numerical analyses of: linear buckling, dynamic eigenvalue and geometrically static non-linear problems. Both perfect and imperfect geometries were considered. Initial geometrical imperfections included first and second buckling and vibration mode shapes with three amplitudes. The vibration correlation technique proved to be useful in estimating limit or buckling loads. It was very efficient in the case of small and medium imperfection magnitudes. The significant deviations between the predicted and calculated buckling and limit loads occurred when large imperfections were considered.


Frequenz ◽  
2020 ◽  
Vol 74 (7-8) ◽  
pp. 263-270
Author(s):  
Cao Zeng ◽  
Xue Han Hu ◽  
Feng Wei ◽  
Xiao Wei Shi

AbstractIn this paper, a tunable balanced-to-balanced in-phase filtering power divider (FPD) is designed, which can realize a two-way equal power division with high selectivity and isolation. A differential-mode (DM) passband with a steep filtering performance is realized by applying microstrip stub-loaded resonators (SLRs). Meanwhile, six varactors are loaded to the SLRs to achieve the center frequency (CF) and bandwidth adjustment, respectively. U-type microstrip lines integrated with stepped impedance slotline resonators are utilized as the differential feedlines, which suppress the common-mode (CM) intrinsically, making the DM responses independent of the CM ones. A tuning center frequency from 3.2 to 3.75 GHz and a fractional bandwidth (12.1–17.6%) with more than 10 dB return loss and less than 2.3 dB insertion loss can be achieved by changing the voltage across the varactors. A good agreement between the simulated and measured results is observed. To the best of authors' knowledge, the proposed balanced-to-balanced tunable FPD is first ever reported.


2021 ◽  
Author(s):  
Jicheng Zhang ◽  
Lifeng Wang ◽  
Guoan Tai ◽  
Jianxin Zhou ◽  
Wei Sun ◽  
...  

2020 ◽  
Vol 6 (1) ◽  
Author(s):  
Xuefeng Wang ◽  
Xueyong Wei ◽  
Dong Pu ◽  
Ronghua Huan

Abstract Since the discovery of the electron, the accurate detection of electrical charges has been a dream of the scientific community. Owing to some remarkable advantages, micro/nanoelectromechanical system-based resonators have been used to design electrometers with excellent sensitivity and resolution. Here, we demonstrate a novel ultrasensitive charge detection method utilizing nonlinear coupling in two micromechanical resonators. We achieve single-electron charge detection with a high resolution up to 0.197 ± 0.056 $${\mathrm{e}}/\sqrt {{\mathrm{Hz}}}$$ e / Hz at room temperature. Our findings provide a simple strategy for measuring electron charges with extreme accuracy.


1991 ◽  
Vol 239 ◽  
Author(s):  
J.-M. Baribeau ◽  
D. J. Lockwood

ABSTRACTStrain shift coefficient measurements for longitudinal optical phonons in molecular beam epitaxy grown metastable pseudomorphic Si1−xGex layers on (100) Si (0 < x < 0.35) and Ge (0.80 < x < 1) are reported. Strain in partially relaxed annealed specimens was obtained by double-crystal x-ray diffractometry and the corresponding strain phonon shift was measured by Raman scattering spectroscopy. For epilayers grown on Si it was found that the epilayer Si-Si phonon frequency varies linearly with strain. The magnitude of the strain shift coefficient b however showed a small composition dependence varying from b ≈ -700 cm-1 at x = 0 to b ≈ -950 cm-1 at x = 0.35, corresponding to a stress factor τ = 0.40 + 0.57x: + 0.13x2 cm-1/kbar. For the Ge-Ge vibration mode in epilayers grown on Ge, b decreased from ∼-425 cm-1 at x = 1 to ∼-500 cm-1 at x = 0.8, corresponding to a stress factor τ ≈ 0.52 – 0.14x - 0.08x2 cm-1/kbar.


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