scholarly journals Passivated, Highly Reflecting, Laser Contacted Ge Rear Side for III-V Multi-Junction Solar Cells

Author(s):  
Charlotte Weiss ◽  
Jonas Schon ◽  
Oliver Hohn ◽  
Bianca Fuhrmann ◽  
Frank Dimroth ◽  
...  
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2019 ◽  
Vol 13 (9) ◽  
pp. 1900163 ◽  
Author(s):  
Kai Sporleder ◽  
Volker Naumann ◽  
Jan Bauer ◽  
Susanne Richter ◽  
Angelika Hähnel ◽  
...  

2019 ◽  
Vol 216 (17) ◽  
pp. 1970056 ◽  
Author(s):  
Kai Sporleder ◽  
Volker Naumann ◽  
Jan Bauer ◽  
Susanne Richter ◽  
Angelika Hähnel ◽  
...  

2013 ◽  
Vol 7 (8) ◽  
pp. 530-533 ◽  
Author(s):  
James Bullock ◽  
Andrew Thomson ◽  
Andrés Cuevas ◽  
Boris Veith ◽  
Jan Schmidt ◽  
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2015 ◽  
Vol 137 ◽  
pp. 280-286 ◽  
Author(s):  
M. Weizman ◽  
H. Rhein ◽  
K. Bhatti ◽  
R. Duman ◽  
C. Schultz ◽  
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2017 ◽  
Vol 124 ◽  
pp. 680-690 ◽  
Author(s):  
Andreas Lorenz ◽  
Anna Münzer ◽  
Martin Lehner ◽  
Roland Greutmann ◽  
Heinz Brocker ◽  
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2012 ◽  
Vol 195 ◽  
pp. 310-313 ◽  
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Abdelazize Laades ◽  
Heike Angermann ◽  
Hans Peter Sperlich ◽  
Uta Stürzebecher ◽  
Carlos Alberto Díaz Álvarez ◽  
...  

Aluminum oxide (AlOx) is currently under intensive investigation for use in surface passivation schemes in solar cells. AlOx films contain negative charges and therefore generate an accumulation layer on p-type silicon surfaces, which is very favorable for the rear side of p-type silicon solar cells as well as the p+-emitter at the front side of n-type silicon solar cells. However, it has been reported that quality of an interfacial silicon sub-oxide layer (SiOx), which is usually observed during deposition of AlOx on Silicon, strongly impacts the silicon/AlOx interface passivation properties [1]. The present work demonstrates that a convenient way to control the interface is to form thin wet chemical oxides of high quality prior to the deposition of AlOx/a-SiNx:H stacks by the plasma enhanced chemical vapor deposition (PECVD).


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