Dilute-As InGaNAs/GaN Quantum Wells for High-Efficiency Red Emitters

Author(s):  
Wei Sun ◽  
Hanlin Fu ◽  
Damir Borovac ◽  
Justin C. Goodrich ◽  
Chee-Keong Tan ◽  
...  
2018 ◽  
Vol 11 (9) ◽  
pp. 091003 ◽  
Author(s):  
Valentin N. Jmerik ◽  
Dmitrii V. Nechaev ◽  
Alexey A. Toropov ◽  
Evgenii A. Evropeitsev ◽  
Vladimir I. Kozlovsky ◽  
...  

2019 ◽  
Author(s):  
Baiquan Liu ◽  
Yemliha Altintas ◽  
Lin Wang ◽  
Sushant Shendre ◽  
Manoj Sharma ◽  
...  

<p> Colloidal quantum wells (CQWs) are regarded as a new, highly promising class of optoelectronic materials thanks to their unique excitonic characteristics of high extinction coefficient and ultranarrow emission bandwidth. Although the exploration of CQWs in light-emitting diodes (LEDs) is impressive, the performance of CQW-LEDs lags far behind compared with other types of LEDs (e.g., organic LEDs, colloidal quantum-dot LEDs, and perovskite LEDs). Herein, for the first time, the authors show high-efficiency CQW-LEDs reaching close to the theoretical limit. A key factor for this high performance is the exploitation of hot-injection shell (HIS) growth of CQWs, which enables a near-unity photoluminescence quantum yield (PLQY), reduces nonradiative channels, ensures smooth films and enhances the stability. Remarkably, the PLQY remains 95% in solution and 87% in film despite rigorous cleaning. Through systematically understanding their shape-, composition- and device- engineering, the CQW-LEDs using CdSe/Cd<sub>0.25</sub>Zn<sub>0.75</sub>S core/HIS CQWs exhibit a maximum external quantum efficiency of 19.2%. Additionally, a high luminance of 23,490 cd m<sup>-2</sup>, extremely saturated red color with the Commission Internationale de L’Eclairage coordinates of (0.715, 0.283) and stable emission are obtained. The findings indicate that HIS grown CQWs enable high-performance solution-processed LEDs, which may pave the path for CQW-based display and lighting technologies.</p>


2020 ◽  
Vol 8 (3) ◽  
pp. 883-888 ◽  
Author(s):  
Yuan Li ◽  
Zhiheng Xing ◽  
Yulin Zheng ◽  
Xin Tang ◽  
Wentong Xie ◽  
...  

High quantum efficiency LEDs with InGaN/GaN/AlGaN/GaN MQWs have been demonstrated. The proposed GaN interlayer barrier can not only increase the concentration and the spatial overlap of carriers, but also improve the quality of the MQWs.


CrystEngComm ◽  
2020 ◽  
Author(s):  
Yuanhao Sun ◽  
Fujun Xu ◽  
Na Zhang ◽  
Jing Lang ◽  
Jiaming Wang ◽  
...  

Growth of AlGaN-based multiple quantum wells (MQWs) has been attempted on nano-patterned sapphire substrates (NPSSs). By adopting a critical-temperature approach and optimizing the growth conditions of V/III ratio and Si...


2016 ◽  
Author(s):  
Diego Alonso-Álvarez ◽  
Nicholas Ekins-Daukes

NANO ◽  
2009 ◽  
Vol 04 (05) ◽  
pp. 289-297
Author(s):  
MONICA GAMBHIR ◽  
SIDDHARTHA LAHON ◽  
PRADEEP KUMAR JHA ◽  
MAN MOHAN

The basic technique of stimulated Raman adiabatic passage for laser-induced adiabatic population transfer between discrete quantum states of an asymmetric double quantum well has been used in our study. The results show that the proper time-delay, overlap, and detuning of two pulses allows the coherent transfer between the states of a double quantum well system, leading to the possibility of implementation of semiconductor–based quantum logic gates and high efficiency optical switches. The impact of phase relaxation on the population transfer efficiency is also studied.


2005 ◽  
Vol 85 (2) ◽  
pp. 143-152 ◽  
Author(s):  
Yoshitaka Okada ◽  
Naoyuki Shiotsuka ◽  
Toru Takeda

Author(s):  
Masakazu Sugiyama ◽  
Hirofumi Cho ◽  
Toprasertpong Kasidit ◽  
Hassanet Sodabanlu ◽  
Kentaroh Watanabe ◽  
...  

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