Characterization of the Temperature Dependence of the Pressure Coefficients of n- and p-Type Silicon Using Hydrostatic Testing

2008 ◽  
Vol 8 (4) ◽  
pp. 392-400 ◽  
Author(s):  
Chun-Hyung Cho ◽  
R.C. Jaeger ◽  
J.C. Suhling ◽  
Yanling Kang ◽  
A. Mian
Keyword(s):  
Temperature Dependence ◽  
Pressure Coefficients ◽  
Type Silicon ◽  
P Type

Optical characterization of Ba0.5Sr0.5TiO3 material grown on a p-type silicon substrate (111) doped niobium oxide and chlorophyll

2020 ◽  
Vol 568 (1) ◽  
pp. 62-70
Author(s):  
Aep Setiawan ◽  
Endah Kinarya Palupi ◽  
Rofiqul Umam ◽  
Husin Alatas ◽  
Irzaman
Keyword(s):  
Silicon Substrate ◽  
Niobium Oxide ◽  
Optical Characterization ◽  
Type Silicon ◽  
P Type

Electronic Characterization of Defects in Iron-Doped P-Type Silicon

1991 ◽  
Vol 38-41 ◽  
pp. 373-378 ◽  
Author(s):  
W. Gehlhoff ◽  
K. Irmscher ◽  
U. Rehse
Keyword(s):  
Type Silicon ◽  
Iron Doped ◽  
P Type

Characterization of internal gettering of copper in the vertical direction of p-type silicon wafer

2018 ◽  
Vol 148 ◽  
pp. 35-42 ◽  
Author(s):  
Jung Gyu Jung ◽  
Kisang Lee ◽  
Boyoung Lee ◽  
Ho Seong Lee
Keyword(s):  
Silicon Wafer ◽  
Vertical Direction ◽  
Type Silicon ◽  
P Type

Temperature dependence characterization of effective electron and hole mobilities in the accumulation layers of n- and p-type MOSFET's

1999 ◽  
Vol 46 (6) ◽  
pp. 1290-1294 ◽  
Author(s):  
G. Chindalore ◽  
S. Mudanai ◽  
W.-K. Shih ◽  
A.F. Tasch ◽  
C.M. Maziar
Keyword(s):  
Temperature Dependence ◽  
Effective Electron ◽  
P Type

Fabrication and characterization of n-type aluminum-boron co-doped ZnO on p-type silicon (n-AZB/p-Si) heterojunction diodes

2013 ◽  
Vol 48 (11) ◽  
pp. 4596-4600 ◽  
Author(s):  
Vinod Kumar ◽  
Neetu Singh ◽  
Avinashi Kapoor ◽  
Odireleng M. Ntwaeaborwa ◽  
Hendrik C. Swart
Keyword(s):  
Type Silicon ◽  
Doped Zno ◽  
Heterojunction Diodes ◽  
Fabrication And Characterization ◽  
P Type ◽  
Co Doped
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