Parametric Variation Analysis of Symmetric Double Gate Charge Plasma JLTFET for Biosensor Application

IEEE Sensors Journal ◽

10.1109/jsen.2018.2846409 ◽

2018 ◽

Vol 18 (15) ◽

pp. 6070-6077 ◽

Author(s):

Girish Wadhwa ◽

Balwinder Raj

Keyword(s):

Double Gate ◽

Variation Analysis ◽

Charge Plasma ◽

Parametric Variation ◽

Biosensor Application ◽

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Parametric variation analysis on time corresponding to initiation and ending of evaporation during laser heating

International Communications in Heat and Mass Transfer ◽

10.1016/s0735-1933(02)00315-9 ◽

2002 ◽

Vol 29 (2) ◽

pp. 243-254 ◽

Author(s):

B.S. Yilbas ◽

M. Kalyon ◽

S.Z. Shuja

Keyword(s):

Laser Heating ◽

Variation Analysis ◽

Parametric Variation

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High-performance dual-gate-charge-plasma-AlGaN/GaN MIS-HEMT

Applied Physics A ◽

10.1007/s00339-020-3342-x ◽

2020 ◽

Vol 126 (3) ◽

Author(s):

Ravi Ranjan ◽

Nitesh Kashyap ◽

Ashish Raman

Keyword(s):

High Performance ◽

Charge Plasma ◽

Dual Gate ◽

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Modelling and Analysis of Dual Material Gate Charge Plasma Based Vertical t-shaped TFET

Silicon ◽

10.1007/s12633-021-01518-1 ◽

2021 ◽

Author(s):

Prabin Kumar Bera ◽

Rajib Kar ◽

Durbadal Mandal

Keyword(s):

Charge Plasma ◽

Dual Material ◽

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A SiGe-Source Doping-Less Double-Gate Tunnel FET: Design and Analysis Based on Charge Plasma Technique with Enhanced Performance

Silicon ◽

10.1007/s12633-021-01030-6 ◽

2021 ◽

Author(s):

Varun Mishra ◽

Yogesh Kumar Verma ◽

Santosh Kumar Gupta ◽

Vikas Rathi

Keyword(s):

Double Gate ◽

Charge Plasma ◽

Plasma Technique ◽

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Optimization of the geometry of a charge plasma double-gate junctionless transistor for improved RF stability

Journal of Computational Electronics ◽

10.1007/s10825-019-01340-4 ◽

2019 ◽

Vol 18 (3) ◽

pp. 906-917

Author(s):

Adhithan Pon ◽

Arkaprava Bhattacharyya ◽

B. Padmanaban ◽

R. Ramesh

Keyword(s):

Double Gate ◽

Charge Plasma ◽

Junctionless Transistor ◽

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Advantages of Charge Plasma Based Double Gate Junctionless MOSFET Over Bulk MOSFET for Label Free Biosensing

2020 IEEE VLSI DEVICE CIRCUIT AND SYSTEM (VLSI DCS) ◽

10.1109/vlsidcs47293.2020.9179747 ◽

2020 ◽

Author(s):

Amit Bhattacharyya ◽

Adrija Mukherjee ◽

Manash Chanda ◽

Debashis De

Keyword(s):

Double Gate ◽

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CMOS-MEMS resonator parametric variation analysis through equivalent circuit modeling

2016 6th International Conference on Intelligent and Advanced Systems (ICIAS) ◽

10.1109/icias.2016.7824056 ◽

2016 ◽

Author(s):

Muhammad Umer Mian ◽

John Ojur Dennis ◽

M. Haris M. Khir ◽

Nebyu Yonas Sutri ◽

Abdelaziz Yousif Ahmed ◽

...

Keyword(s):

Equivalent Circuit ◽

Circuit Modeling ◽

Variation Analysis ◽

Parametric Variation ◽

Mems Resonator ◽

Equivalent Circuit Modeling ◽

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Work-function modulated hetero gate charge plasma TFET to enhance the device performance

2019 Devices for Integrated Circuit (DevIC) ◽

10.1109/devic.2019.8783943 ◽

2019 ◽

Author(s):

Sasmita Sahoo ◽

Sidhartha Dash ◽

Guru Prasad Mishra

Keyword(s):

Work Function ◽

Device Performance ◽

Charge Plasma ◽

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A Charge Plasma Based Label Free Biomolecule Detector Using SiGe-Heterojunction Double Gate Tunnel FET

Silicon ◽

10.1007/s12633-021-00969-w ◽

2021 ◽

Author(s):

Basudha Dewan ◽

Shalini Chaudhary ◽

Menka Yadav

Keyword(s):

Double Gate ◽

Charge Plasma ◽

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A Nano junctionless Double-Gate MOSFET by Using the Charge Plasma Concept to Improve Short-Channel Effects and Frequency Characteristics

Journal of Electronic Materials ◽

10.1007/s11664-019-07559-y ◽

2019 ◽

Vol 48 (11) ◽

pp. 7487-7494 ◽

Author(s):

Zeinab Ramezani ◽

Ali A. Orouji ◽

S. Amir Ghoreishi ◽

I. S. Amiri

Keyword(s):

Frequency Characteristics ◽

Double Gate ◽

Short Channel Effects ◽

Short Channel ◽

Charge Plasma ◽

Double Gate Mosfet ◽

Channel Effects

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