Energy-Efficient Carbon Nanotube Field-Effect Phototransistors: Quantum Simulation, Device Physics, and Photosensitivity Analysis

2021 ◽  
pp. 1-1
Author(s):  
Khalil Tamersit
Keyword(s):  
Carbon Nanotube ◽  
Energy Efficient ◽  
Field Effect ◽  
Quantum Simulation ◽  
Device Physics

CARBON NANOTUBE FIELD-EFFECT TRANSISTORS

2006 ◽  
Vol 16 (04) ◽  
pp. 897-912 ◽  
Author(s):  
JING GUO ◽  
SIYURANGA O. KOSWATTA ◽  
NEOPHYTOS NEOPHYTOU ◽  
MARK LUNDSTROM
Keyword(s):  
Carbon Nanotube ◽  
Numerical Simulations ◽  
Field Effect ◽  
Field Effect Transistors ◽  
Device Physics ◽  
Challenges And Opportunities ◽  
The Status ◽  
Similarities And Differences ◽  
Device Technology

This paper discusses the device physics of carbon nanotube field-effect transistors (CNTFETs). After reviewing the status of device technology, we use results of our numerical simulations to discuss the physics of CNTFETs emphasizing the similarities and differences with traditional FETs. The discussion shows that our understanding of CNTFET device physics has matured to the point where experiments can be explained and device designs optimized. The paper concludes with some thoughts on challenges and opportunities for CNTFET electronics.

scholarly journals Temperature Dependence of Electrical Characteristics of Carbon Nanotube Field-Effect Transistors: A Quantum Simulation Study

2012 ◽  
Vol 2012 ◽  
pp. 1-7 ◽  
Author(s):  
Ali Naderi ◽  
S. Mohammad Noorbakhsh ◽  
Hossein Elahipanah
Keyword(s):  
Carbon Nanotube ◽  
Field Effect ◽  
Field Effect Transistors ◽  
Quantum Simulation ◽  
Subthreshold Swing ◽  
Short Channel ◽  
Principal Characteristics ◽  
Channel Effects ◽  
Consistent Solution ◽  
Drain Conductance

By developing a two-dimensional (2D) full quantum simulation, the attributes of carbon nanotube field-effect transistors (CNTFETs) in different temperatures have been comprehensively investigated. Simulations have been performed by employing the self-consistent solution of 2D Poisson-Schrödinger equations within the nonequilibrium Green's function (NEGF) formalism. Principal characteristics of CNTFETs such as current capability, drain conductance, transconductance, and subthreshold swing (SS) have been investigated. Simulation results present that as temperature raises from 250 to 500 K, the drain conductance and on-current of the CNTFET improved; meanwhile the on-/off-current ratio deteriorated due to faster growth in off-current. Also the effects of temperature on short channel effects (SCEs) such as drain-induced barrier lowering (DIBL) and threshold voltage roll-off have been studied. Results show that the subthreshold swing and DIBL parameters are almost linearly correlated, so the degradation of these parameters has the same origin and can be perfectly influenced by the temperature.

Quantum simulation of a junctionless carbon nanotube field-effect transistor under torsional strain

2020 ◽  
Vol 138 ◽  
pp. 106239 ◽  
Author(s):  
Soheila Moghaddam ◽  
Seyed Saleh Ghoreishi ◽  
Reza Yousefi ◽  
Habib Aderang
Keyword(s):  
Carbon Nanotube ◽  
Field Effect ◽  
Field Effect Transistor ◽  
Quantum Simulation ◽  
Torsional Strain ◽  
Effect Transistor
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