Focused Ion Beam Nanopatterning for Optoelectronic Device Fabrication

ABSTRACTFocused-ion-beam (FIB) technology has been applied during the past decade to a wide variety of device and circuit fabrication procedures. The ability to perform maskless implantation, selective sputtering and deposition, and high resolution lithography with a single system has allowed FIB researchers to explore a large number of unique fabrication processes for silicon, GaAs, and heterojunction devices. Currently, exploratory studies in advanced optoelectronic device fabrication employ the largest number of diverse FIB techniques. In this paper, the major application areas of FIB technology to optoelectronic research are reviewed, and possible uses of ultrasmall (≤500 Å) ion beams in the fabrication of optoelectronic device structures with novel properties are described.

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Exploring cryogenic focused ion beam milling as a Group III–V device fabrication tool

Nuclear Instruments and Methods in Physics Research Section B Beam Interactions with Materials and Atoms ◽

10.1016/j.nimb.2014.02.126 ◽

2014 ◽

Vol 328 ◽

pp. 33-41 ◽

Cited By ~ 6

Author(s):

Melissa Commisso Dolph ◽

Christopher Santeufemio

Keyword(s):

Focused Ion Beam ◽

Ion Beam ◽

Device Fabrication ◽

Group Iii ◽

Focused Ion Beam Milling

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Focused Ion Beam Etching of GaN

MRS Internet Journal of Nitride Semiconductor Research ◽

10.1557/s1092578300003392 ◽

1999 ◽

Vol 4 (S1) ◽

pp. 769-774 ◽

Cited By ~ 1

Author(s):

C. Flierl ◽

I.H. White ◽

M. Kuball ◽

P.J. Heard ◽

G.C. Allen ◽

...

Keyword(s):

Focused Ion Beam ◽

Ion Beam ◽

Etching Rate ◽

Side Wall ◽

Device Fabrication ◽

Direct Write ◽

Ion Beam Etching ◽

Etched Surface ◽

A Current ◽

Established Technique

We have investigated the use of focused ion beam (FIB) etching for the fabrication of GaN-based devices. Although work has shown that conventional reactive ion etching (RIE) is in most cases appropriate for the GaN device fabrication, the direct write facility of FIB etching – a well-established technique for optical mask repair and for IC failure analysis and repair – without the requirement for depositing an etch mask is invaluable. A gallium ion beam of about 20nm diameter was used to sputter GaN material. The etching rate depends linearly on the ion dose per area with a slope of 3.5 × 10−4 μm3/pC. At a current of 3nA, for example, this corresponds to an each rate of 1.05 μm3/s. Good etching qualities have been achieved with a side wall roughness significantly below 0.1 μm. Change in the roughness of the etched surface plane stay below 8nm.

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Identification and Characterization of Submicron Defects for Semiconductor Processing

MRS Proceedings ◽

10.1557/proc-864-e9.35 ◽

2005 ◽

Vol 864 ◽

Author(s):

Wei Liu ◽

Aime Fausz ◽

John Svoboda ◽

Brian Butcher ◽

Rick Williams ◽

...

Keyword(s):

Focused Ion Beam ◽

Ion Beam ◽

Device Fabrication ◽

Accurate Identification ◽

Auger Analysis ◽

Analytical Technique ◽

Surface Sensitivity ◽

Processing Steps ◽

Identification And Characterization

AbstractAuger Electron Spectroscopy (AES) is one of the few techniques that has surface sensitivity and small analysis volume to make it the ideal analytical technique for the compositional characterization of submicron defects. However, the integration of defect inspections at only a few processing steps during device fabrication results in the detection of many buried defects. In order to identify these defects, it is necessary to determine their composition. Combined with Focused Ion Beam (FIB) technique to expose the cross section of the buried defect, Auger analysis provides accurate identification of buried defects that are critical for quickly ramping to higher yields and recovering from yield excursions. This paper reports two examples of the use of AES combined with FIB to diagnose processing problems.

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VIA-1 focused-ion-beam processes for device fabrication

IEEE Transactions on Electron Devices ◽

10.1109/t-ed.1981.20582 ◽

1981 ◽

Vol 28 (10) ◽

pp. 1253-1253

Author(s):

R.L. Kubena ◽

C.L. Anderson ◽

R.L. Seliger ◽

R.G. Brault ◽

L.J. Miller

Keyword(s):

Focused Ion Beam ◽

Ion Beam ◽

Device Fabrication

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Focused ION Beam Etching of GaN

MRS Proceedings ◽

10.1557/proc-537-g6.57 ◽

1998 ◽

Vol 537 ◽

Cited By ~ 1

Author(s):

C. Flierl ◽

I.H. White ◽

M. Kuball ◽

P.J. Heard ◽

G.C. Allen ◽

...

Keyword(s):

Focused Ion Beam ◽

Ion Beam ◽

Etching Rate ◽

Side Wall ◽

Device Fabrication ◽

Direct Write ◽

Ion Beam Etching ◽

Etched Surface ◽

A Current ◽

Established Technique

AbstractWe have investigated the use of focused ion beam (FIB) etching for the fabrication of GaN-based devices. Although work has shown that conventional reactive ion etching (RME) is in most cases appropriate for the GaN device fabrication, the direct write facility of FIB etching - a well-established technique for optical mask repair and for IC failure analysis and repair - without the requirement for depositing an etch mask is invaluable. A gallium ion beam of about 20nm diameter was used to sputter GaN material. The etching rate depends linearly on the ion dose per area with a slope of 3.5 × 10-4 μm3/pC. At a current of 3nA, for example, this corresponds to an etch rate of 1.05μm3/s. Good etching qualities have been achieved with a side wall roughness significantly below 0.1μm. Changes in the roughness of the etched surface plane stay below 8nm.

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GaAs/AlGaAs device fabrication using MBE growth and in situ focused ion beam lithography

Physica B Condensed Matter ◽

10.1016/0921-4526(96)00416-4 ◽

1996 ◽

Vol 227 (1-4) ◽

pp. 264-267 ◽

Cited By ~ 2

Author(s):

G.A.C. Jones ◽

P.D. Rose ◽

E.H. Linfield ◽

D.A. Ritchie

Keyword(s):

Focused Ion Beam ◽

Ion Beam ◽

Device Fabrication ◽

Mbe Growth ◽

Ion Beam Lithography

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Cross-sectionnal Electron Microscopy investigation of silicon amorphisation during high temperature zinc-ion bombardment

Proceedings, annual meeting, Electron Microscopy Society of America ◽

10.1017/s0424820100176411 ◽

1990 ◽

Vol 48 (4) ◽

pp. 656-657

Author(s):

J. Faure ◽

S. Simov ◽

G. Balossier ◽

L.M. Bharadwaj ◽

A. Claverie ◽

...

Keyword(s):

Electron Microscopy ◽

High Temperature ◽

Ion Beam ◽

Optoelectronic Device ◽

Zinc Ion ◽

Device Fabrication ◽

Strongly Correlated ◽

Structural Modifications ◽

Implantation Temperature ◽

Microscopy Investigation

In silicon technology, the use of zinc as a dopant reveals a great interest in optoelectronic device fabrication, such as photoresistors, light amplifiers, photodiodes etc. Recently, zinc implantation has received a new attention in thermal oxidation of silicon. Oxidation kinetics are strongly correlated to zinc segregation at the oxide-silicon interface and to the nature of the ion induced damage which is stable at the implantation temperature. We used cross-sectionnal electron microscopy (XTEM) for the characterisation of the structural modifications induced in a monocrystalline silicon substrate during high temperature Zn+implantation. During irradiation, silicon wafers (111 oriented) were heated to 110°C by use of a resistively heated copper block, while the incident ion beam had an energy of 120keV and a current density less than 3μA.cm-2.Figure 1 presents the effect of Zn+ implantation associated with a 1014 ions.cm-2 implanted dose. This 220 DF image reveals, in black, a buried noncrystalline layer lying from about 30 to 85nm from the arrowed silicon surface.

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Graphene crystal growth by thermal precipitation of focused ion beam induced deposition of carbon precursor via patterned-iron thin layers

Nanofabrication ◽

10.2478/nanofab-2014-0001 ◽

2014 ◽

Vol 1 (1) ◽

Author(s):

Gemma Rius ◽

Francesc Perez-Murano ◽

Masamichi Yoshimura

Keyword(s):

Thermal Treatment ◽

Focused Ion Beam ◽

Ion Beam ◽

Single Layer ◽

Device Fabrication ◽

Thin Layers ◽

High Temperature Treatment ◽

Iron Carbides ◽

Complete Wetting ◽

Graphene Growth

AbstractRecently, relevant advances on graphene as a building block of integrated circuits (ICs) have been demonstrated. Graphene growth and device fabrication related processing has been steadily and intensively powered due to commercial interest; however, there are many challenges associated with the incorporation of graphene into commercial applications which includes challenges associated with the synthesis of this material. Specifically, the controlled deposition of single layer large single crystal graphene on arbitrary supports, is particularly challenging. Previously, we have reported the first demonstration of the transformation of focused ion beam induced deposition of carbon (FIBID-C) into patterned graphitic layers by metal-assisted thermal treatment (Ni foils). In this present work, we continue exploiting the FIBID-C approach as a route for graphene deposition. Here, thin patterned Fe layers are used for the catalysis of graphenization and graphitization. We demonstrate the formation of high quality single and few layer graphene, which evidences, the possibility of using Fe as a catalyst for graphene deposition. The mechanism is understood as the minute precipitation of atomic carbon after supersaturation of some iron carbides formed under a high temperature treatment. As a consequence of the complete wetting of FIBID-C and patterned Fe layers, which enable graphene growth, the as-deposited patterns do not preserve their original shape after the thermal treatment

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