Applications of Focused Ion Beams to Optoelectronic Device Fabrication - An Overview

1988 ◽  
Vol 126 ◽  
Author(s):  
Randall L. Kubena
Keyword(s):  
Focused Ion Beam ◽  
Ion Beam ◽  
Optoelectronic Device ◽  
Ion Beams ◽  
Device Fabrication ◽  
Focused Ion Beams ◽  
The Past ◽  
Device Structures ◽  
Circuit Fabrication ◽  
Major Application

ABSTRACTFocused-ion-beam (FIB) technology has been applied during the past decade to a wide variety of device and circuit fabrication procedures. The ability to perform maskless implantation, selective sputtering and deposition, and high resolution lithography with a single system has allowed FIB researchers to explore a large number of unique fabrication processes for silicon, GaAs, and heterojunction devices. Currently, exploratory studies in advanced optoelectronic device fabrication employ the largest number of diverse FIB techniques. In this paper, the major application areas of FIB technology to optoelectronic research are reviewed, and possible uses of ultrasmall (≤500 Å) ion beams in the fabrication of optoelectronic device structures with novel properties are described.

Recent Advances in The Application of Focused Ion Beams

1985 ◽  
Vol 45 ◽  
Author(s):  
Kenji Gamo ◽  
Susumu Namba
Keyword(s):  
Ion Implantation ◽  
Focused Ion Beam ◽  
Ion Beam ◽  
Ion Beams ◽  
Focused Ion Beams ◽  
Ion Beam Modification ◽  
Chemical Effects ◽  
Recent Advances ◽  
Maskless Patterning

Recent advances of focused ion beam systems and their applications are presented. The applications include maskless ion implantation and various maskless patterning techniques which make use of ion induced chemical effects. These are ion beam assisted etching, deposition and ion beam modification techniques and are promising to improve patterning speed and extend applications of focused ion beams.

Nanoscale patterning by focused ion beam enhanced etching for optoelectronic device fabrication

2001 ◽  
Vol 57-58 ◽  
pp. 891-896 ◽  
Author(s):  
S. Rennon ◽  
L. Bach ◽  
H. König ◽  
J.P. Reithmaier ◽  
A. Forchel ◽  
...  
Keyword(s):  
Focused Ion Beam ◽  
Ion Beam ◽  
Optoelectronic Device ◽  
Device Fabrication ◽  
Nanoscale Patterning

Focused Ion Beam Nanopatterning for Optoelectronic Device Fabrication

2005 ◽  
Vol 11 (6) ◽  
pp. 1292-1298 ◽  
Author(s):  
Y.K. Kim ◽  
A.J. Danner ◽  
J.J. Raftery ◽  
K.D. Choquette
Keyword(s):  
Focused Ion Beam ◽  
Ion Beam ◽  
Optoelectronic Device ◽  
Device Fabrication

Electron and Focused Ion Beams in Thermal Science and Engineering

2008 ◽  
Author(s):  
Tae-Youl Choi ◽  
Dimos Poulikakos
Keyword(s):  
Electron Beam ◽  
Heavy Ions ◽  
Focused Ion Beam ◽  
Ion Beam ◽  
High Energy ◽  
Ion Beams ◽  
Focused Ion Beams ◽  
Deposition Method ◽  
Science And Engineering ◽  
Nanoscale Structures

Focused-ion-beam (FIB) is a useful tool for defining nanoscale structures. High energy heavy ions inherently exhibit destructive nature. A less destructive tool has been devised by using electron beam. FIB is mainly considered as an etching tool, while electron beam can be used for deposition purpose. In this paper, both etching and deposition method are demonstrated for applications in thermal science. Thermal conductivity of nanostructures (such as carbon nanotubes) was measured by using the FIB (and electron beam) nanolithography technique. Boiling characteristics was studied in a submicron heater that could be fabricated by using FIB.

scholarly journals Focused Ion Beams. Thin Film Growth by Low Energy Focused Ion Beam.

Hyomen Kagaku ◽  
1995 ◽  
Vol 16 (12) ◽  
pp. 724-728
Author(s):  
Shinji NAGAMACHI ◽  
Masahiro UEDA ◽  
Junzo ISHIKAWA
Keyword(s):  
Thin Film ◽  
Focused Ion Beam ◽  
Film Growth ◽  
Ion Beam ◽  
Ion Beams ◽  
Low Energy ◽  
Thin Film Growth ◽  
Focused Ion Beams

scholarly journals Material Sputtering with a Multi-Ion Species Plasma Focused Ion Beam

2021 ◽  
Vol 2021 ◽  
pp. 1-9
Author(s):  
Valerie Brogden ◽  
Cameron Johnson ◽  
Chad Rue ◽  
Jeremy Graham ◽  
Kurt Langworthy ◽  
...  
Keyword(s):  
Focused Ion Beam ◽  
Ion Beam ◽  
Ion Beams ◽  
Focused Ion Beams ◽  
Cross Sectional ◽  
Systematic Exploration ◽  
Community Effort ◽  
Beam Currents ◽  
New Applications ◽  
Ion Species

Focused ion beams are an essential tool for cross-sectional material analysis at the microscale, preparing TEM samples, and much more. New plasma ion sources allow for higher beam currents and options to use unconventional ion species, resulting in increased versatility over a broader range of substrate materials. In this paper, we present the results of a four-material study from five different ion species at varying beam energies. This, of course, is a small sampling of the enormous variety of potential specimen and ion species combinations. We show that milling rates and texturing artifacts are quite varied. Therefore, there is a need for a systematic exploration of how different ion species mill different materials. There is so much to be done that it should be a community effort. Here, we present a publicly available automation script used to both measure sputter rates and characterize texturing artifacts as well as a collaborative database to which anyone may contribute. We also put forth some ideas for new applications of focused ion beams with novel ion species.

scholarly journals Focused Ion Beams. Present Status of Focused Ion Beam.

Hyomen Kagaku ◽  
1995 ◽  
Vol 16 (12) ◽  
pp. 729-734
Author(s):  
Masanori KOMURO
Keyword(s):  
Present Status ◽  
Focused Ion Beam ◽  
Ion Beam ◽  
Ion Beams ◽  
Focused Ion Beams

scholarly journals Focused Ion Beams. On the Preparation of TEM Specimens using Focused Ion Beam.

Hyomen Kagaku ◽  
1995 ◽  
Vol 16 (12) ◽  
pp. 755-760
Author(s):  
Masayoshi TARUTANI ◽  
Yoshiyuki KAIHARA ◽  
Yoshizo TAKAI ◽  
Ryuichi SHIMIZU
Keyword(s):  
Focused Ion Beam ◽  
Ion Beam ◽  
Ion Beams ◽  
Focused Ion Beams

Preparation of TEM samples by focused ion beams

1995 ◽  
Vol 53 ◽  
pp. 518-519
Author(s):  
John F. Walker ◽  
J C Reiner ◽  
C Solenthaler
Keyword(s):  
Integrated Circuit ◽  
Polycrystalline Silicon ◽  
Field Effect Transistor ◽  
High Spatial Resolution ◽  
Ion Beam ◽  
Ion Beams ◽  
Focused Ion Beams ◽  
Precise Location ◽  
Effect Transistor ◽  
Circuit Technology

The high spatial resolution available from TEM can be used with great advantage in the field of microelectronics to identify problems associated with the continually shrinking geometries of integrated circuit technology. In many cases the location of the problem can be the most problematic element of sample preparation. Focused ion beams (FIB) have previously been used to prepare TEM specimens, but not including using the ion beam imaging capabilities to locate a buried feature of interest. Here we describe how a defect has been located using the ability of a FIB to both mill a section and to search for a defect whose precise location is unknown. The defect is known from electrical leakage measurements to be a break in the gate oxide of a field effect transistor. The gate is a square of polycrystalline silicon, approximately 1μm×1μm, on a silicon dioxide barrier which is about 17nm thick. The break in the oxide can occur anywhere within that square and is expected to be less than 100nm in diameter.

Automated Diagonal Slice and View Solution for 3D Device Structure Analysis

2018 ◽  
Author(s):  
Sang Hoon Lee ◽  
Jeff Blackwood ◽  
Stacey Stone ◽  
Michael Schmidt ◽  
Mark Williamson ◽  
...  
Keyword(s):  
Cross Section ◽  
Focused Ion Beam ◽  
Ion Beam ◽  
Image Data ◽  
Planar Surface ◽  
Device Structure ◽  
Cross Sectional ◽  
Device Structures ◽  
The Cross ◽  
Planar Analysis

Abstract The cross-sectional and planar analysis of current generation 3D device structures can be analyzed using a single Focused Ion Beam (FIB) mill. This is achieved using a diagonal milling technique that exposes a multilayer planar surface as well as the cross-section. this provides image data allowing for an efficient method to monitor the fabrication process and find device design errors. This process saves tremendous sample-to-data time, decreasing it from days to hours while still providing precise defect and structure data.

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