Nanoscale patterning by focused ion beam enhanced etching for optoelectronic device fabrication

ABSTRACTFocused-ion-beam (FIB) technology has been applied during the past decade to a wide variety of device and circuit fabrication procedures. The ability to perform maskless implantation, selective sputtering and deposition, and high resolution lithography with a single system has allowed FIB researchers to explore a large number of unique fabrication processes for silicon, GaAs, and heterojunction devices. Currently, exploratory studies in advanced optoelectronic device fabrication employ the largest number of diverse FIB techniques. In this paper, the major application areas of FIB technology to optoelectronic research are reviewed, and possible uses of ultrasmall (≤500 Å) ion beams in the fabrication of optoelectronic device structures with novel properties are described.

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Exploring cryogenic focused ion beam milling as a Group III–V device fabrication tool

Nuclear Instruments and Methods in Physics Research Section B Beam Interactions with Materials and Atoms ◽

10.1016/j.nimb.2014.02.126 ◽

2014 ◽

Vol 328 ◽

pp. 33-41 ◽

Cited By ~ 6

Author(s):

Melissa Commisso Dolph ◽

Christopher Santeufemio

Keyword(s):

Focused Ion Beam ◽

Ion Beam ◽

Device Fabrication ◽

Group Iii ◽

Focused Ion Beam Milling

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Focused Ion Beam Etching of GaN

MRS Internet Journal of Nitride Semiconductor Research ◽

10.1557/s1092578300003392 ◽

1999 ◽

Vol 4 (S1) ◽

pp. 769-774 ◽

Cited By ~ 1

Author(s):

C. Flierl ◽

I.H. White ◽

M. Kuball ◽

P.J. Heard ◽

G.C. Allen ◽

...

Keyword(s):

Focused Ion Beam ◽

Ion Beam ◽

Etching Rate ◽

Side Wall ◽

Device Fabrication ◽

Direct Write ◽

Ion Beam Etching ◽

Etched Surface ◽

A Current ◽

Established Technique

We have investigated the use of focused ion beam (FIB) etching for the fabrication of GaN-based devices. Although work has shown that conventional reactive ion etching (RIE) is in most cases appropriate for the GaN device fabrication, the direct write facility of FIB etching – a well-established technique for optical mask repair and for IC failure analysis and repair – without the requirement for depositing an etch mask is invaluable. A gallium ion beam of about 20nm diameter was used to sputter GaN material. The etching rate depends linearly on the ion dose per area with a slope of 3.5 × 10−4 μm3/pC. At a current of 3nA, for example, this corresponds to an each rate of 1.05 μm3/s. Good etching qualities have been achieved with a side wall roughness significantly below 0.1 μm. Change in the roughness of the etched surface plane stay below 8nm.

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Nanoscale patterning and welding by solvent-free dry particle spray and focused ion beam

International Journal of Precision Engineering and Manufacturing-Green Technology ◽

10.1007/s40684-014-0032-1 ◽

2014 ◽

Vol 1 (3) ◽

pp. 257-260 ◽

Cited By ~ 5

Author(s):

Jung-Oh Choi ◽

Chung-Soo Kim

Keyword(s):

Focused Ion Beam ◽

Ion Beam ◽

Solvent Free ◽

Nanoscale Patterning

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Focused Ion-Beam (FIB) Nanomachining of Silicon Carbide (SiC) Stencil Masks for Nanoscale Patterning

Materials Science Forum ◽

10.4028/www.scientific.net/msf.717-720.889 ◽

2012 ◽

Vol 717-720 ◽

pp. 889-892 ◽

Cited By ~ 2

Author(s):

Hamidreza Zamani ◽

Seung Wan Lee ◽

Amir Avishai ◽

Christian A. Zorman ◽

R. Mohan Sankaran ◽

...

Keyword(s):

Thin Films ◽

Silicon Carbide ◽

Focused Ion Beam ◽

Ion Beam ◽

High Quality ◽

Nanoscale Patterning ◽

Different Types ◽

Thin Membranes ◽

Amorphous Sic ◽

Nanoscale Features

We report on experimental explorations of using focused ion beam (FIB) nanomachining of different types of silicon carbide (SiC) thin membranes, for making robust, high-quality stencil masks for new emerging options of nanoscale patterning. Using thin films and membranes in polycrystalline SiC (poly-SiC), 3C-SiC, and amorphous SiC (a-SiC) with thicknesses in the range of t~250nm−1.6μm, we have prototyped a series of stencil masks, with nanoscale features routinely down to ~100nm.

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Identification and Characterization of Submicron Defects for Semiconductor Processing

MRS Proceedings ◽

10.1557/proc-864-e9.35 ◽

2005 ◽

Vol 864 ◽

Author(s):

Wei Liu ◽

Aime Fausz ◽

John Svoboda ◽

Brian Butcher ◽

Rick Williams ◽

...

Keyword(s):

Focused Ion Beam ◽

Ion Beam ◽

Device Fabrication ◽

Accurate Identification ◽

Auger Analysis ◽

Analytical Technique ◽

Surface Sensitivity ◽

Processing Steps ◽

Identification And Characterization

AbstractAuger Electron Spectroscopy (AES) is one of the few techniques that has surface sensitivity and small analysis volume to make it the ideal analytical technique for the compositional characterization of submicron defects. However, the integration of defect inspections at only a few processing steps during device fabrication results in the detection of many buried defects. In order to identify these defects, it is necessary to determine their composition. Combined with Focused Ion Beam (FIB) technique to expose the cross section of the buried defect, Auger analysis provides accurate identification of buried defects that are critical for quickly ramping to higher yields and recovering from yield excursions. This paper reports two examples of the use of AES combined with FIB to diagnose processing problems.

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VIA-1 focused-ion-beam processes for device fabrication

IEEE Transactions on Electron Devices ◽

10.1109/t-ed.1981.20582 ◽

1981 ◽

Vol 28 (10) ◽

pp. 1253-1253

Author(s):

R.L. Kubena ◽

C.L. Anderson ◽

R.L. Seliger ◽

R.G. Brault ◽

L.J. Miller

Keyword(s):

Focused Ion Beam ◽

Ion Beam ◽

Device Fabrication

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Focused ION Beam Etching of GaN

MRS Proceedings ◽

10.1557/proc-537-g6.57 ◽

1998 ◽

Vol 537 ◽

Cited By ~ 1

Author(s):

C. Flierl ◽

I.H. White ◽

M. Kuball ◽

P.J. Heard ◽

G.C. Allen ◽

...

Keyword(s):

Focused Ion Beam ◽

Ion Beam ◽

Etching Rate ◽

Side Wall ◽

Device Fabrication ◽

Direct Write ◽

Ion Beam Etching ◽

Etched Surface ◽

A Current ◽

Established Technique

AbstractWe have investigated the use of focused ion beam (FIB) etching for the fabrication of GaN-based devices. Although work has shown that conventional reactive ion etching (RME) is in most cases appropriate for the GaN device fabrication, the direct write facility of FIB etching - a well-established technique for optical mask repair and for IC failure analysis and repair - without the requirement for depositing an etch mask is invaluable. A gallium ion beam of about 20nm diameter was used to sputter GaN material. The etching rate depends linearly on the ion dose per area with a slope of 3.5 × 10-4 μm3/pC. At a current of 3nA, for example, this corresponds to an etch rate of 1.05μm3/s. Good etching qualities have been achieved with a side wall roughness significantly below 0.1μm. Changes in the roughness of the etched surface plane stay below 8nm.

Download Full-text