Focused ION Beam Etching of GaN

AbstractWe have investigated the use of focused ion beam (FIB) etching for the fabrication of GaN-based devices. Although work has shown that conventional reactive ion etching (RME) is in most cases appropriate for the GaN device fabrication, the direct write facility of FIB etching - a well-established technique for optical mask repair and for IC failure analysis and repair - without the requirement for depositing an etch mask is invaluable. A gallium ion beam of about 20nm diameter was used to sputter GaN material. The etching rate depends linearly on the ion dose per area with a slope of 3.5 × 10-4 μm3/pC. At a current of 3nA, for example, this corresponds to an etch rate of 1.05μm3/s. Good etching qualities have been achieved with a side wall roughness significantly below 0.1μm. Changes in the roughness of the etched surface plane stay below 8nm.

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Focused Ion Beam Etching of GaN

MRS Internet Journal of Nitride Semiconductor Research ◽

10.1557/s1092578300003392 ◽

1999 ◽

Vol 4 (S1) ◽

pp. 769-774 ◽

Cited By ~ 1

Author(s):

C. Flierl ◽

I.H. White ◽

M. Kuball ◽

P.J. Heard ◽

G.C. Allen ◽

...

Keyword(s):

Focused Ion Beam ◽

Ion Beam ◽

Etching Rate ◽

Side Wall ◽

Device Fabrication ◽

Direct Write ◽

Ion Beam Etching ◽

Etched Surface ◽

A Current ◽

Established Technique

We have investigated the use of focused ion beam (FIB) etching for the fabrication of GaN-based devices. Although work has shown that conventional reactive ion etching (RIE) is in most cases appropriate for the GaN device fabrication, the direct write facility of FIB etching – a well-established technique for optical mask repair and for IC failure analysis and repair – without the requirement for depositing an etch mask is invaluable. A gallium ion beam of about 20nm diameter was used to sputter GaN material. The etching rate depends linearly on the ion dose per area with a slope of 3.5 × 10−4 μm3/pC. At a current of 3nA, for example, this corresponds to an each rate of 1.05 μm3/s. Good etching qualities have been achieved with a side wall roughness significantly below 0.1 μm. Change in the roughness of the etched surface plane stay below 8nm.

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Electron beam testing of multilevel metal integrated circuits

Proceedings, annual meeting, Electron Microscopy Society of America ◽

10.1017/s0424820100088464 ◽

1991 ◽

Vol 49 ◽

pp. 830-831

Author(s):

P. E. Russell ◽

Z. J. Radzimski ◽

D. A. Ricks ◽

J. P. Vitarelli

Keyword(s):

Electron Beam ◽

Integrated Circuits ◽

Focused Ion Beam ◽

Ion Beam ◽

Measurement Techniques ◽

Ion Beam Etching ◽

Voltage Contrast ◽

Modelling Effort ◽

Established Technique

Fundamentally, voltage contrast is a well established technique for determination of voltages on metal surface which can be directly probed with an electron beam. However, actual integrated circuits (IC) consist of two or more conducting layers (metal and doped polysilicon) separated by dielectrics and covered by a dielectric passivation layer. Our work has addressed: i) the removal of dielectric layers (depassivation) by reactive ion etching (RIE) or selectively by focused ion beam etching to allow access to exposed metal lines; ii) modelling effort to understand how the materials and geometric parameters of multilevel IC's affect voltage contrast measurements, and iii) improvements in retarding field spectrometer based measurement techniques.

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Side-wall damage in a transmission electron microscopy specimen of crystalline Si prepared by focused ion beam etching

Journal of Vacuum Science & Technology A Vacuum Surfaces and Films ◽

10.1116/1.581795 ◽

1999 ◽

Vol 17 (4) ◽

pp. 1201-1204 ◽

Cited By ~ 69

Author(s):

N. I. Kato ◽

Y. Kohno ◽

H. Saka

Keyword(s):

Electron Microscopy ◽

Transmission Electron Microscopy ◽

Focused Ion Beam ◽

Ion Beam ◽

Side Wall ◽

Transmission Electron Microscopy Specimen ◽

Ion Beam Etching ◽

Transmission Electron

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FIB Micromachining and Nano-Structure Fabrication

ISTFA 1999: Conference Proceedings from the 25th International Symposium for Testing and Failure Analysis ◽

10.31399/asm.cp.istfa1999p0327 ◽

1999 ◽

Author(s):

Raymond A. Lee ◽

Patrick J. Wolpert

Keyword(s):

High Precision ◽

Focused Ion Beam ◽

Ion Beam ◽

Biological Applications ◽

Optical Lens ◽

Nano Structure ◽

Beam System ◽

Afm Tips ◽

Established Technique ◽

Made In

Abstract FIB Micromachining has long been an established technique, but until recently it has been overshadowed by the more mainstream semiconductor application of the Focused Ion Beam system. Nano- Structure fabrication using the FIB system has become more popular recently due to several factors. The need for sub-micron structures have grown significantly due to a need for enhanced optical and biological applications. Another reason for the growth in micromachining is the improvement made in the ability of FIB systems to produce geometric shapes with high precision. With the latest high-end FIB systems, it is possible to produce microstructures with tens of nano-meters of precision. Optical lens, AFM tips, and nano-apertures are all part of the growing application for FIB Micromachining. This paper will discuss the ability and limitations of the FIB system and some possible application for FIB Micromachining.

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Direct-write, focused ion beam-deposited, 7 K superconducting C–Ga–O nanowire

Applied Physics Letters ◽

10.1063/1.3458863 ◽

2010 ◽

Vol 96 (26) ◽

pp. 262511 ◽

Cited By ~ 11

Author(s):

Pashupati Dhakal ◽

G. McMahon ◽

S. Shepard ◽

T. Kirkpatrick ◽

J. I. Oh ◽

...

Keyword(s):

Focused Ion Beam ◽

Ion Beam ◽

Direct Write

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Maskless fabrication of nanogap electrodes by using Ga-focused ion beam etching

Journal of Micro/Nanolithography MEMS and MOEMS ◽

10.1117/1.2172614 ◽

2006 ◽

Vol 5 (1) ◽

pp. 011006 ◽

Cited By ~ 6

Author(s):

Takashi Nagase

Keyword(s):

Focused Ion Beam ◽

Ion Beam ◽

Ion Beam Etching ◽

Nanogap Electrodes

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Hydrogen Ion Beam Processing of Single Crystal Diamond Chips

MRS Proceedings ◽

10.1557/proc-354-717 ◽

1994 ◽

Vol 354 ◽

Author(s):

Shuji Kiyohara ◽

Iwao Miyamoto

Keyword(s):

Surface Roughness ◽

Single Crystal ◽

Incidence Angle ◽

Ion Beam ◽

Etching Rate ◽

Hydrogen Ion ◽

Hydrogen Ions ◽

Ion Beam Etching ◽

Single Crystal Diamond ◽

Before And After

AbstractIn order to apply ion beam etching with hydrogen ions to the ultra-precision processing of diamond tools, hydrogen ion beam etching characteristics of single crystal diamond chips with (100) face were investigated. The etching rate of diamond for 500 eV and 1000 eV hydrogen ions increases with the increase of the ion incidence angle, and eventually reaches a maximum at the ion incidence angle of approximately 50°, then may decrease with the increase of the ion incidence angle. The dependence of the etching rate on the ion incidence angle of hydrogen ions is fairly similar to that obtained with argon ions. Furthermore, the surface roughness of diamond chips before and after hydrogen ion beam etching was evaluated using an atomic force microscope. Consequently, the surface roughness after hydrogen ion beam etching decreases with the increase of the ion incidence angle within range of the ion incidence angle of 60°.

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