High-Speed InGaAs Photodetectors by Selective-Area MOCVD Toward Optoelectronic Integrated Circuits

2014 ◽  
Vol 20 (6) ◽  
pp. 36-42 ◽  
Author(s):  
Yu Geng ◽  
Shaoqi Feng ◽  
Andrew W. O. Poon ◽  
Kei May Lau
Keyword(s):  
Integrated Circuits ◽  
High Speed ◽  
Optoelectronic Integrated Circuits ◽  
Selective Area

scholarly journals In-Plane Detection of Guided Surface Plasmons for High-Speed Optoelectronic Integrated Circuits

2017 ◽  
Vol 3 (1) ◽  
pp. 1700196 ◽  
Author(s):  
Evgeniy Panchenko ◽  
Jasper J. Cadusch ◽  
Ori Avayu ◽  
Tal Ellenbogen ◽  
Timothy D. James ◽  
...  
Keyword(s):  
Integrated Circuits ◽  
Surface Plasmons ◽  
High Speed ◽  
Optoelectronic Integrated Circuits

Selective Area Epitaxy for Optoelectronic Devices

1993 ◽  
Vol 300 ◽  
Author(s):  
H. Temkin ◽  
R. A. Hamm ◽  
A. Feygenson ◽  
M. A. Cotta ◽  
L. R. Harriott ◽  
...  
Keyword(s):  
Integrated Circuits ◽  
High Performance ◽  
Optoelectronic Devices ◽  
Bipolar Transistors ◽  
Powerful Method ◽  
Selective Area Epitaxy ◽  
Optoelectronic Integrated Circuits ◽  
Selective Area

ABSTRACTWe discuss the characteristics of MOMBE based selective area epitaxy useful in the preparation of optoelectronic devices. Selective area epitaxy, a process in which epitaxy is restricted only to the areas opened in a suitably prepared dielectric mask, offers a powerful method of preparing high performance devices, varying the thickness and composition of the grown layers simply by controlling the width of the open areas and monolithically integrating different device types on common substrates. Lasers, heterostructure bipolar transistors, and optoelectronic integrated circuits based on InGaAs/InP system and relying on selective area epitaxy are described.

InP-HBT ICs FOR 40 Gb/s OPTICAL LINKS

1998 ◽  
Vol 09 (02) ◽  
pp. 595-630
Author(s):  
MEHRAN MOKHTARI ◽  
URBAN WESTERGREN ◽  
BO WILLÉN ◽  
THOMAS SWAHN ◽  
ROBERT WALDEN
Keyword(s):  
Integrated Circuits ◽  
High Speed ◽  
Optical Transmission ◽  
Supply Voltage ◽  
Measurement Equipment ◽  
Optical Links ◽  
Optoelectronic Integrated Circuits ◽  
Fiber Optical ◽  
Strong Candidate ◽  
Electronic Parts

InP-based HBT technology has proven to be a strong candidate for ultra high speed electronic as well as optoelectronic integrated circuits. The cut-offs frequencies of the available devices exceed 100 GHz. To challenge the technology, a variety of circuits, suitable for a demonstrator for the 40 Gb/s fiber optical transmission system have been designed, fabricated, and tested. All the circuits show potential for 40 Gb/s applications. The electrical parts have been implemented in MSI/LSI AlInAs/InGaAs-HBT technology, while the monolithic optoelectronic receivers were realized in SSI- InP/InGaAs HBT technology. The verification of performance of the circuits have been mainly limited by available measurement equipment. All the electronic parts were operational with 3 volt supply voltage. All the circuits were fully functional after the first processing round. No redesign was necessary.

Optoelectronic Integrated Circuits For High Speed Signal Processing

1986 ◽  
Vol 25 (10) ◽  
Author(s):  
M. K. Kilcoyne ◽  
S. Beccue ◽  
K. D. Pedrotti ◽  
R. Asatourian ◽  
R. Anderson
Keyword(s):  
Signal Processing ◽  
Integrated Circuits ◽  
High Speed ◽  
Optoelectronic Integrated Circuits

AlGaInAs MOVPE selective area growth for photonic integrated circuits

2015 ◽  
Vol 4 (2) ◽  
Author(s):  
Jean Decobert ◽  
Guillaume Binet ◽  
Alvaro D. B. Maia ◽  
Pierre-Yves Lagrée ◽  
Christophe Kazmierski
Keyword(s):  
Integrated Circuits ◽  
Band Gap ◽  
Vapor Phase ◽  
High Speed ◽  
Photonic Integrated Circuits ◽  
Effective Diffusion ◽  
Selective Area Growth ◽  
Multiple Quantum ◽  
Selective Area ◽  
Area Growth

AbstractWe developed a generic photonic integration platform based on selective area growth (SAG) by metal organic vapor-phase epitaxy (MOVPE) of AlGaInAs/InP multiple quantum well (MQW) material. For efficient and predictive band gap engineering of photonic integrated circuits, different SAG zones of active and passive function heterostructures are precisely modeled and characterized. With the vapor-phase diffusion model, using numerical simulations of finite volumes, we extracted the three effective diffusion lengths of Al, Ga, and In species. In our growth conditions, these lengths were 32, 65, and 14 μm, respectively. The Kardar-Parisi-Zhang (KPZ) equation, a classic approach to describe the growing interface profile, is used. AlGaInAs MQW properties are then simulated in terms of thickness, composition, band gap, and biaxial strain variations. Highly resolved μ-photoluminescence and optical interferometer microscopy measurements confirm the validity of the band gap and thickness variations for both bulk and MQW layers. A new diffractometer, with a submillimeter X-ray spot, was used to study the structural properties of the MQW in the center of the SAG area. As an application, we present the realization and operation of full-monolithic high-speed advanced modulation format transmitters based on novel prefixed optical phase switching by fast electro-absorption modulators.

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