Resistive Switching Mechanism in $\hbox{Zn}_{x}\hbox{Cd}_{1 - x}\hbox{S}$ Nonvolatile Memory Devices

2007 ◽  
Vol 28 (1) ◽  
pp. 14-16 ◽  
Author(s):  
Zheng Wang ◽  
Peter B. Griffin ◽  
Jim McVittie ◽  
Simon Wong ◽  
Paul C. McIntyre ◽  
...  
Keyword(s):  
Resistive Switching ◽  
Nonvolatile Memory ◽  
Memory Devices ◽  
Switching Mechanism ◽  
Nonvolatile Memory Devices ◽  
Resistive Switching Mechanism

Effect of Top Electrode Material on Resistive Switching Characteristics in MnO2 Nonvolatile Memory Devices

2019 ◽  
Vol 41 (3) ◽  
pp. 475-482 ◽  
Author(s):  
Yu-Ting Tsai ◽  
Ting-Chang Chang ◽  
Chao-Cheng Lin ◽  
Lan-Shin Chiang ◽  
Shih-Cheng Chen ◽  
...  
Keyword(s):  
Resistive Switching ◽  
Electrode Material ◽  
Nonvolatile Memory ◽  
Memory Devices ◽  
Nonvolatile Memory Devices ◽  
Switching Characteristics

Improved Resistive Switching Reliability in Graded NiO Multilayer for Resistive Nonvolatile Memory Devices

2010 ◽  
Vol 31 (7) ◽  
pp. 725-727 ◽  
Author(s):  
Myoung-Jae Lee ◽  
Chang Bum Lee ◽  
Dongsoo Lee ◽  
Seung Ryul Lee ◽  
Jihyun Hur ◽  
...  
Keyword(s):  
Resistive Switching ◽  
Nonvolatile Memory ◽  
Memory Devices ◽  
Nonvolatile Memory Devices

Resistive switching memory devices based on electrical conductance tuning in poly(4-vinyl phenol)–oxadiazole composites

2015 ◽  
Vol 17 (44) ◽  
pp. 29978-29984 ◽  
Author(s):  
Yanmei Sun ◽  
Fengjuan Miao ◽  
Rui Li ◽  
Dianzhong Wen
Keyword(s):  
Thin Films ◽  
Resistive Switching ◽  
Nonvolatile Memory ◽  
Electrical Conductance ◽  
Memory Devices ◽  
Resistive Switching Memory ◽  
Nonvolatile Memory Devices ◽  
Vinyl Phenol ◽  
Switching Memory

Nonvolatile memory devices, based on electrical conductance tuning in thin films of poly(4-vinyl phenol) (PVP) and 2-(4-tert-butylphenyl)-5-(4-biphenylyl)-1,3,4-oxadiazole (PBD) composites, are fabricated.

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