Resistive-Gate Field-Effect Transistor: A Novel Steep-Slope Device Based on a Metal—Insulator—Metal—Oxide Gate Stack
2014 ◽
Vol 35
(8)
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pp. 877-879
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Keyword(s):
2010 ◽
Vol 13
(10)
◽
pp. H336
◽
2010 ◽
Vol 49
(12)
◽
pp. 124202
◽
2017 ◽
Vol 70
◽
pp. 246-253
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Keyword(s):
2021 ◽
Vol 134
◽
pp. 106046
Keyword(s):