Highly Uniform Photo-Sensitivity of Large-Area Planar InGaAs p-i-n Photodiodes With Low Specific Contact Resistance of Gallium Zinc Oxide

2015 ◽  
Vol 36 (10) ◽  
pp. 1066-1068 ◽  
Author(s):  
Chi-Chen Huang ◽  
Chong-Long Ho ◽  
Meng-Chyi Wu
Keyword(s):  
Zinc Oxide ◽  
Contact Resistance ◽  
Specific Contact Resistance ◽  
Large Area ◽  
Specific Contact ◽  
Highly Uniform

scholarly journals Micro- and nanoscale electrical characterization of large-area graphene transferred to functional substrates

2013 ◽  
Vol 4 ◽  
pp. 234-242 ◽  
Author(s):  
Gabriele Fisichella ◽  
Salvatore Di Franco ◽  
Patrick Fiorenza ◽  
Raffaella Lo Nigro ◽  
Fabrizio Roccaforte ◽  
...  
Keyword(s):  
Electrical Properties ◽  
Contact Resistance ◽  
Sheet Resistance ◽  
Flexible Electronics ◽  
Structural Integrity ◽  
Chemical Vapour ◽  
Specific Contact Resistance ◽  
Large Area ◽  
Conductive Atomic Force Microscopy ◽  
Specific Contact

Chemical vapour deposition (CVD) on catalytic metals is one of main approaches for high-quality graphene growth over large areas. However, a subsequent transfer step to an insulating substrate is required in order to use the graphene for electronic applications. This step can severely affect both the structural integrity and the electronic properties of the graphene membrane. In this paper, we investigated the morphological and electrical properties of CVD graphene transferred onto SiO2 and on a polymeric substrate (poly(ethylene-2,6-naphthalene dicarboxylate), briefly PEN), suitable for microelectronics and flexible electronics applications, respectively. The electrical properties (sheet resistance, mobility, carrier density) of the transferred graphene as well as the specific contact resistance of metal contacts onto graphene were investigated by using properly designed test patterns. While a sheet resistance R sh ≈ 1.7 kΩ/sq and a specific contact resistance ρc ≈ 15 kΩ·μm have been measured for graphene transferred onto SiO2, about 2.3× higher R sh and about 8× higher ρc values were obtained for graphene on PEN. High-resolution current mapping by torsion resonant conductive atomic force microscopy (TRCAFM) provided an insight into the nanoscale mechanisms responsible for the very high ρc in the case of graphene on PEN, showing a ca. 10× smaller “effective” area for current injection than in the case of graphene on SiO2.

High Temperature Characterization Of Ni, W And Al Contacts To 3C-Silicon Carbide Thin Films

1997 ◽  
Vol 483 ◽  
Author(s):  
C Jacob ◽  
P Pirouz ◽  
H-I Kuo ◽  
M Mehregany
Keyword(s):  
Silicon Carbide ◽  
High Temperature ◽  
Contact Resistance ◽  
Room Temperature ◽  
Specific Contact Resistance ◽  
Large Area ◽  
Fermi Level Pinning ◽  
Specific Contact ◽  
Current Availability ◽  
Sic Films

AbstractWith the current availability of large-area 3C-SiC films, it is imperative that stable high temperature contacts be developed for high power devices. By comparing the existing data in the literature, we demonstrate that the contact behavior on each of the different polytypes of SiC will vary significantly. In particular, we demonstrate this for 6H-SiC and 3C-SiC. The interface slope parameter, S, which is a measure of the Fermi-level pinning in each system varies between 0.4–0.5 on 6H-SiC, while it is 0.6 on 3C-SiC. This implies that the barrier heights of contacts to 3C-SiC will vary more significantly with the choice of metal than for 6H-SiC.Aluminum, nickel and tungsten were deposited on 3C-SiC films and their specific contact resistance measured using the circular TLM method. High temperature measurements (up to 400°C) were performed to determine the behavior of these contacts at operational temperatures. Aluminum was used primarily as a baseline for comparison since it melts at 660°C and cannot be used for very high temperature contacts. The specific contact resistance (ρc) for nickel at room temperature was 5 × 10−4 Ω-cm2, but increased with temperature to a value of 1.5 × 10−3 Ω-cm2 at 400°C. Tungsten had a higher room temperature × 10−3 Ω-cm2, which remained relatively constant with increasing temperature up to 400°C. This is related to the fact that there is hardly any reaction between tungsten and silicon carbide even up to 900°C, whereas nickel almost completely reacts with SiC by that temperature. Contact resistance measurements were also performed on samples that were annealed at 500°C.

Measurement of the zinc oxide–molybdenum specific contact resistance for applications in Cu(In,Ga)Se2-technology

2011 ◽  
Vol 519 (21) ◽  
pp. 7545-7548 ◽  
Author(s):  
M. Oertel ◽  
S. Götz ◽  
J. Cieslak ◽  
J. Haarstrich ◽  
H. Metzner ◽  
...  
Keyword(s):  
Zinc Oxide ◽  
Contact Resistance ◽  
Specific Contact Resistance ◽  
Specific Contact

Improvement of the Specific Contact Resistance on P-Type 4H-SiC by Using a Highly P-Typed Doped 4H-SiC Layer Selectively Grown by VLS Transport

2014 ◽  
Vol 806 ◽  
pp. 57-60
Author(s):  
Nicolas Thierry-Jebali ◽  
Arthur Vo-Ha ◽  
Davy Carole ◽  
Mihai Lazar ◽  
Gabriel Ferro ◽  
...  
Keyword(s):  
Contact Resistance ◽  
Ohmic Contacts ◽  
Schottky Barrier Height ◽  
Annealing Temperature ◽  
Process Condition ◽  
Specific Contact Resistance ◽  
High Doping Level ◽  
Annealing Temperatures ◽  
Specific Contact ◽  
P Type

This work reports on the improvement of ohmic contacts made on heavily p-type doped 4H-SiC epitaxial layer selectively grown by Vapor-Liquid-Solid (VLS) transport. Even before any annealing process, the contact is ohmic. This behavior can be explained by the high doping level of the VLS layer (Al concentration > 1020 cm-3) as characterized by SIMS profiling. Upon variation of annealing temperatures, a minimum value of the Specific Contact Resistance (SCR) down to 1.3x10-6 Ω.cm2 has been obtained for both 500 °C and 800 °C annealing temperature. However, a large variation of the SCR was observed for a same process condition. This variation is mainly attributed to a variation of the Schottky Barrier Height.

Current Transport in Ti/Al/Ni/Au Ohmic Contacts to GaN and AlGaN

2007 ◽  
Vol 556-557 ◽  
pp. 1027-1030 ◽  
Author(s):  
Ferdinando Iucolano ◽  
Fabrizio Roccaforte ◽  
Filippo Giannazzo ◽  
A. Alberti ◽  
Vito Raineri
Keyword(s):  
Contact Resistance ◽  
Field Emission ◽  
Ohmic Contacts ◽  
Theoretical Models ◽  
Specific Contact Resistance ◽  
Strong Increase ◽  
Current Transport ◽  
Electrical Characteristics ◽  
Structural And Electrical Properties ◽  
Specific Contact

In this work, the structural and electrical properties of Ti/Al/Ni/Au contacts on n-type Gallium Nitride were studied. An ohmic behaviour was observed after annealing above 700°C. The structural analysis showed the formation of an interfacial TiN layer and different phases in the reacted layer (AlNi, AlAu4, Al2Au) upon annealing. The temperature dependence of the specific contact resistance demonstrated that the current transport occurs through thermoionic field emission in the contacts annealed at 600°C, and field emission after annealing at higher temperatures. By fitting the data with theoretical models, a reduction of the Schottky barrier from 1.21eV after annealing at 600°C to 0.81eV at 800°C was demonstrated, together with a strong increase of the carrier concentration at the interface. The reduction of the contact resistance upon annealing was discussed by correlating the structural and electrical characteristics of the contacts.

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