High-Performance Dual Gate Amorphous InGaZnO Thin Film Transistor with Top Gate to Drain Offset

2021 ◽  
pp. 1-1
Author(s):  
Sunaina Priyadarshi ◽  
Mohammad Masum Billah ◽  
Hyunho Kim ◽  
Md. Hasnat Rabbi ◽  
Sadia Sayed Urmi ◽  
...  
2012 ◽  
Author(s):  
H. W. Zan ◽  
C. H. Liao ◽  
C. H. Li ◽  
C. C. Tsai ◽  
W. T. Chen ◽  
...  

Author(s):  
Duk Young Jeong ◽  
Mohammad Masum Billah ◽  
Abu Bakar Siddik ◽  
Byungju Han ◽  
Yeoungjin Chang ◽  
...  

2020 ◽  
Vol 41 (12) ◽  
pp. 1782-1785
Author(s):  
Md. Hasnat Rabbi ◽  
Mohammad Masum Billah ◽  
Abu Bakar Siddik ◽  
Suhui Lee ◽  
Jiseob Lee ◽  
...  

RSC Advances ◽  
2015 ◽  
Vol 5 (63) ◽  
pp. 51286-51289 ◽  
Author(s):  
Tung-Ming Pan ◽  
Fa-Hsyang Chen ◽  
Yu-Hsuan Shao

In this paper, a HfO2/Er2O3/HfO2(HEH) stacked structure was developed as a gate dielectric for amorphous InGaZnO (α-IGZO) thin-film transistor (TFT) applications.


2012 ◽  
Author(s):  
F. H. Chen ◽  
M. N. Hung ◽  
H. Y. Chen ◽  
J. H. Liu ◽  
J. L. Her ◽  
...  

Polymer ◽  
2021 ◽  
pp. 123685
Author(s):  
Yanjun Guo ◽  
Mingchao Xiao ◽  
Xi Zhang ◽  
Jiayao Duan ◽  
Shengyu Cong ◽  
...  

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