Sensitivity enhancement of amorphous InGaZnO thin film transistor based extended gate field-effect transistors with dual-gate operation

2013 ◽  
Vol 181 ◽  
pp. 880-884 ◽  
Author(s):  
Hyun-June Jang ◽  
Ja-Gyeong Gu ◽  
Won-Ju Cho
Keyword(s):  
Thin Film ◽  
Field Effect ◽  
Field Effect Transistors ◽  
Thin Film Transistor ◽  
Sensitivity Enhancement ◽  
Gate Operation ◽  
Dual Gate ◽  
Amorphous Ingazno

scholarly journals USING PERCOLATIVE CRYSTALLINE 0.3 CUO/PVDF NANOCOMPOSITE GATE DIELECTRIC FOR FABRICATING HIGH-EFFECT MOBILITY THIN FILM TRANSISTOR OPERATING AT LOW VOLTAGE

2021 ◽  
Vol 9 (11) ◽  
pp. 1095-1101
Author(s):  
Debabrata Bhadra ◽  
Keyword(s):  
Thin Film ◽  
Field Effect ◽  
Gate Dielectric ◽  
Low Voltage ◽  
Field Effect Transistors ◽  
Thin Film Transistor ◽  
Dielectric Constants ◽  
Gate Insulator ◽  
Electrical Characteristics ◽  
Capacitance Density

Thin-film transistor (TFT) with various layers of crystalline Poly-vinylidene fluoride (PVDF)/CuO percolative nanocomposites based on Anthracene as a gate dielectric insulator have been fabricated. A device with excellent electrical characteristics at low operating voltages (<1V) has been designed. Different layers (L) of the film were also prepared to achieve the best optimization of ideal gate insulator with various static dielectric constants (εr). Capacitance density, leakage current at 1V gate voltage and electrical characteristics of OFETs with a single and multi layer films have been investigated. This device was showed highest field effect mobility of 2.27 cm2/Vs, a threshold voltage of -1.6V, an exceptionally low sub threshold slope of 380 mV/decade and an on/off ratio of 106. Such a High-ε three layered (3L) PVDF/CuO gate dielectric appears to be highly promising candidates for organic non-volatile memory, sensor and field-effect transistors (FETs).

Extremely Stable Dual Gate Coplanar Amorphous InGaZnO Thin Film Transistor With Split Active Layer by N2O Annealing

2020 ◽  
Vol 41 (12) ◽  
pp. 1782-1785
Author(s):  
Md. Hasnat Rabbi ◽  
Mohammad Masum Billah ◽  
Abu Bakar Siddik ◽  
Suhui Lee ◽  
Jiseob Lee ◽  
...  
Keyword(s):  
Thin Film ◽  
Active Layer ◽  
Thin Film Transistor ◽  
Dual Gate ◽  
Amorphous Ingazno

High-Performance Dual Gate Amorphous InGaZnO Thin Film Transistor with Top Gate to Drain Offset

2021 ◽  
pp. 1-1
Author(s):  
Sunaina Priyadarshi ◽  
Mohammad Masum Billah ◽  
Hyunho Kim ◽  
Md. Hasnat Rabbi ◽  
Sadia Sayed Urmi ◽  
...  
Keyword(s):  
Thin Film ◽  
High Performance ◽  
Thin Film Transistor ◽  
Dual Gate ◽  
Amorphous Ingazno

scholarly journals Influence of Active Channel Layer Thickness on SnO2 Thin-Film Transistor Performance

Electronics ◽  
2021 ◽  
Vol 10 (2) ◽  
pp. 200
Author(s):  
Do Won Kim ◽  
Hyeon Joong Kim ◽  
Changmin Lee ◽  
Kyoungdu Kim ◽  
Jin-Hyuk Bae ◽  
...  
Keyword(s):  
Thin Film ◽  
Field Effect ◽  
Thin Film Transistor ◽  
Sol Gel ◽  
Precursor Concentration ◽  
Sno2 Thin Film ◽  
Field Effect Mobility ◽  
Si Substrates ◽  
Channel Layer ◽  
Active Channel

Sol-gel processed SnO2 thin-film transistors (TFTs) were fabricated on SiO2/p+ Si substrates. The SnO2 active channel layer was deposited by the sol-gel spin coating method. Precursor concentration influenced the film thickness and surface roughness. As the concentration of the precursor was increased, the deposited films were thicker and smoother. The device performance was influenced by the thickness and roughness of the SnO2 active channel layer. Decreased precursor concentration resulted in a fabricated device with lower field-effect mobility, larger subthreshold swing (SS), and increased threshold voltage (Vth), originating from the lower free carrier concentration and increase in trap sites. The fabricated SnO2 TFTs, with an optimized 0.030 M precursor, had a field-effect mobility of 9.38 cm2/Vs, an SS of 1.99, an Ion/Ioff value of ~4.0 × 107, and showed enhancement mode operation and positive Vth, equal to 9.83 V.

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