Low-noise InP-based avalanche photodiodes with an impact-ionization-engineered multiplication region
2005 ◽
Vol 17
(8)
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pp. 1719-1721
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2000 ◽
Vol 10
(01)
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pp. 327-337
Keyword(s):
2001 ◽
Vol 13
(12)
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pp. 1346-1348
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Keyword(s):
2002 ◽
Vol 14
(12)
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pp. 1722-1724
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2005 ◽
Vol 41
(4)
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pp. 568-572
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Keyword(s):
2003 ◽
Vol 50
(2)
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pp. 347-351
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