scholarly journals The effects of nonlocal impact ionization on the speed of avalanche photodiodes

2003 ◽  
Vol 50 (2) ◽  
pp. 347-351 ◽  
Author(s):  
P.J. Hambleton ◽  
B.K. Ng ◽  
S.A. Plimmer ◽  
J.P.R. David ◽  
G.J. Rees
Keyword(s):  
Impact Ionization ◽  
Avalanche Photodiodes

High-speed and low-noise SACM avalanche photodiodes with an impact-ionization-engineered multiplication region

2005 ◽  
Vol 17 (8) ◽  
pp. 1719-1721 ◽  
Author(s):  
Ning Duan ◽  
Shuling Wang ◽  
Feng Ma ◽  
Ning Li ◽  
J.C. Campbell ◽  
...  
Keyword(s):  
High Speed ◽  
Impact Ionization ◽  
Avalanche Photodiodes ◽  
Low Noise

Determination of Impact Ionization Coefficients Measured from 4H Silicon Carbide Avalanche Photodiodes

2007 ◽  
Vol 556-557 ◽  
pp. 339-342 ◽  
Author(s):  
W.S. Loh ◽  
C. Mark Johnson ◽  
J.S. Ng ◽  
Peter M. Sandvik ◽  
Steve Arthur ◽  
...  
Keyword(s):  
Impact Ionization ◽  
Avalanche Photodiodes ◽  
Submicron Devices ◽  
Illuminating Light ◽  
Factor Data ◽  
Ionization Coefficients ◽  
P Type ◽  
Dark Currents ◽  
The Impact

Hole initiated avalanche multiplication characteristics of 4H-SiC avalanche photodiodes have been studied. The diodes had n+-n-p SiC epitaxial layers grown on a p-type substrate. These 1 mm2 devices had very low dark currents and exhibited sharp breakdown at voltages of approximately 500V. The diodes multiplication characteristics appeared to be identical when the wavelength of the illuminating light from the top varied from 288 to 325nm, implying that almost pure hole initiated multiplication was occurring. The multiplication factor data were modelled using a local multiplication model with impact ionization coefficients of 4H-SiC reported by various authors. The impact ionization coefficients extracted from submicron devices by Ng et al. were found to give accurate predictions for multiplication factors within the uncertainties of the doping levels. This result suggests that their ionization coefficients can be applied to thicker bulk 4H-SiC structures.

Band Offset Dependance on Impact Ionization Rates in InAlGaAs Staircase Avalanche Photodiodes

1995 ◽  
Vol 34 (Part 2, No. 8B) ◽  
pp. L1048-L1050 ◽  
Author(s):  
Masayoshi Tsuji ◽  
Kikuo Makita ◽  
Isao Watanabe ◽  
Kenko Taguchi
Keyword(s):  
Impact Ionization ◽  
Avalanche Photodiodes ◽  
Band Offset ◽  
Ionization Rates

Characterization of impact ionization engineered InGaAs avalanche photodiodes

2011 ◽  
Author(s):  
H. R. Burris ◽  
L. M. Thomas ◽  
C. I. Moore ◽  
W. R. Smith ◽  
D. S. Rabinovich ◽  
...  
Keyword(s):  
Impact Ionization ◽  
Avalanche Photodiodes
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