scholarly journals Comparison of different models of non-local impact ionization for low noise avalanche photodiodes

2011 ◽  
Vol 8 (9) ◽  
pp. 2577-2581
Author(s):  
John S. Marsland
Keyword(s):  
Impact Ionization ◽  
Avalanche Photodiodes ◽  
Low Noise ◽  
Non Local ◽  
Local Impact

High-speed and low-noise SACM avalanche photodiodes with an impact-ionization-engineered multiplication region

2005 ◽  
Vol 17 (8) ◽  
pp. 1719-1721 ◽  
Author(s):  
Ning Duan ◽  
Shuling Wang ◽  
Feng Ma ◽  
Ning Li ◽  
J.C. Campbell ◽  
...  
Keyword(s):  
High Speed ◽  
Impact Ionization ◽  
Avalanche Photodiodes ◽  
Low Noise

Lifetime Calculations of MOSFET’s Using Depth-Dependent Non-Local Impact Ionization

1993 ◽  
pp. 469-472
Author(s):  
M. J. van Dort ◽  
J. W. Slotboom ◽  
G. Streutker ◽  
P. H. Woerlee
Keyword(s):  
Impact Ionization ◽  
Non Local ◽  
Local Impact

HIGH SPEED RESONANT-CAVITY InGaAs/InAlAs AVALANCHE PHOTODIODES

2000 ◽  
Vol 10 (01) ◽  
pp. 327-337
Author(s):  
J. C. CAMPBELL ◽  
H. NIE ◽  
C. LENOX ◽  
G. KINSEY ◽  
P. YUAN ◽  
...  
Keyword(s):  
High Speed ◽  
Impact Ionization ◽  
Avalanche Photodiodes ◽  
Resonant Cavity ◽  
Multiple Quantum Well ◽  
Low Noise ◽  
Excess Noise ◽  
Multiple Quantum ◽  
Gain Bandwidth ◽  
Unity Gain

The evolution of long-haul optical fiber telecommunications systems to bit rates greater than 10 GB/s has created a need for avalanche photodiodes (APDs) with higher bandwidths and higher gain-bandwidth products than are currently available. It is also desirable to maintain good quantum efficiency and low excess noise. At present, the best performance (f3dB ~ 15 GHz at low gain and gain-bandwidth product ~ 150 GHz) has been achieved by AlInAs/InGaAs(P) multiple quantum well (MQW) APDs. In this paper we report a resonant-cavity InAlAs/InGaAs APD that operates near 1.55 μm. These APDs have achieved very low noise (k equivalent to 0.18) as a result of the very thin multiplication regions that were utilized. The low noise is explained in terms of a new model that accounts for the non-local nature of impact ionization. A unity-gain bandwith of 24 GHz and a gain-bandwidth-product of 290 GHz were achieved.

scholarly journals Non-Local Model for the Spatial Distribution of Impact Ionization Events in Avalanche Photodiodes

2014 ◽  
Vol 26 (1) ◽  
pp. 25-28 ◽  
Author(s):  
David A. Ramirez ◽  
Majeed M. Hayat ◽  
Andrew S. Huntington ◽  
George M. Williams
Keyword(s):  
Spatial Distribution ◽  
Impact Ionization ◽  
Avalanche Photodiodes ◽  
Local Model ◽  
Non Local

Low-noise avalanche photodiodes with graded impact-ionization-engineered multiplication region

2001 ◽  
Vol 13 (12) ◽  
pp. 1346-1348 ◽  
Author(s):  
S. Wang ◽  
R. Sidhu ◽  
X.G. Zheng ◽  
X. Li ◽  
X. Sun ◽  
...  
Keyword(s):  
Impact Ionization ◽  
Avalanche Photodiodes ◽  
Low Noise

scholarly journals Non Local Impact Ionization Effects in Semiconductor Devices

VLSI Design ◽  
1998 ◽  
Vol 6 (1-4) ◽  
pp. 291-297 ◽  
Author(s):  
Duilio Meglio ◽  
Corrado Cianci ◽  
Aldo Di Carlo ◽  
Paolo Lugli
Keyword(s):  
Carrier Transport ◽  
Impact Ionization ◽  
Semiconductor Devices ◽  
High Energy ◽  
Drift Diffusion ◽  
Non Local ◽  
Local Impact ◽  
Ionization Coefficients ◽  
The Impact ◽  
Space Effects

Impact ionization processes define the breakdown characteristics of semiconductor devices. An accurate description of such phenomenon, however, is limited to very sophisticated device simulators such as Monte Carlo. A new physical model for the impact ionization process is presented, which accounts for dead space effects and high energy carrier transport at a Drift Diffusion level. Such model allows to define universal impact ionization coefficients which are device-geometry independent. By using available experimental data these parameters have been calculated for In0.53Ga0.47As.

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