Split pump region in 1.55 ^|^mu;m InGaAsP/InGaAsP asymmetric active multi-mode interferometer laser diode for improved modulation bandwidth

2014 ◽  
Vol E97.C (7) ◽  
pp. 781-786 ◽  
Author(s):  
Mohammad NASIR UDDIN ◽  
Takaaki KIZU ◽  
Yasuhiro HINOKUMA ◽  
Kazuhiro TANABE ◽  
Akio TAJIMA ◽  
...  
Keyword(s):  
Laser Diode ◽  
Modulation Bandwidth ◽  
Multi Mode

Fast speed switching response and high modulation signal processing bandwidth through LiNbO3 electro-optic modulators

2020 ◽  
Vol 0 (0) ◽  
Author(s):  
Mahmoud M. A. Eid ◽  
Ahmed Nabih Zaki Rashed ◽  
Iraj S. Amiri
Keyword(s):  
Near Infrared ◽  
Infrared Region ◽  
Modulation Bandwidth ◽  
Fast Speed ◽  
Electrooptic Modulators ◽  
High Modulation ◽  
Data Rates ◽  
Electro Optic ◽  
Modulation Signal ◽  
Speed Response

AbstractThis work outlined the fast speed response and high modulation bandwidth through LiNbO3 electro-optic modulators. The refractive index is analyzed to estimate the switching voltage and modulation bandwidth for these modulators. The modulation voltage and data transmission data rates are analyzed and discussed clearly through LiNbO3 electro-optic modulators. The modulator’s performance efficiency is upgraded with the optimum modulator length of 10 mm and its thickness of 2 mm. The proposed modulators are compared with GaAs electrooptic modulators under various electro-optic modulators dimensions at 1300 nm near-infrared region and room temperature.

Effective differential gain and modulation bandwidth reduction in quantum well lasers due to confinement factor modulation

1993 ◽  
Vol 5 (2) ◽  
pp. 145-148 ◽  
Author(s):  
S. Shin ◽  
C.W. Lee ◽  
C.B. Su ◽  
J. LaCourse ◽  
W. Rideout ◽  
...  
Keyword(s):  
Quantum Well ◽  
Quantum Well Lasers ◽  
Modulation Bandwidth ◽  
Bandwidth Reduction ◽  
Differential Gain

Modulation index dependence of intensity modulation bandwidth in visible light communications

2018 ◽  
Vol 43 (19) ◽  
pp. 4570 ◽  
Author(s):  
Zi-Yang Wu ◽  
Xiao-Yu Liu ◽  
Jiang-Shan Wang ◽  
Jiao Wang
Keyword(s):  
Visible Light ◽  
Intensity Modulation ◽  
Modulation Index ◽  
Modulation Bandwidth ◽  
Visible Light Communications

scholarly journals Polymer colour converter with very high modulation bandwidth for visible light communications

2017 ◽  
Vol 5 (35) ◽  
pp. 8916-8920 ◽  
Author(s):  
D. A. Vithanage ◽  
A. L. Kanibolotsky ◽  
S. Rajbhandari ◽  
P. P. Manousiadis ◽  
M. T. Sajjad ◽  
...  
Keyword(s):  
Visible Light ◽  
High Speed ◽  
Visible Light Communication ◽  
Modulation Bandwidth ◽  
Visible Light Communications ◽  
Semiconducting Polymer ◽  
High Modulation ◽  
Very High

We report the synthesis, photophysics and application of a novel semiconducting polymer as a colour converter for high speed visible light communication.

scholarly journals Optimized High Performance Characteristics of a designed 450 nm InGaN/AlGaN True Blue Laser Considering Different Injection Current

2020 ◽  
Vol 16 (2) ◽  
Author(s):  
Sayed Muhammod Baker ◽  
Rinku Basak
Keyword(s):  
High Performance ◽  
Maximum Output Power ◽  
Threshold Current ◽  
Injection Current ◽  
Blue Laser ◽  
Performance Characteristics ◽  
Maximum Output ◽  
Modulation Bandwidth ◽  
True Blue ◽  
Material Gain

In this work, the effects on the performance characteristics of a In0.1558Ga0.8442N / Al0.0416Ga0.9584N 3QW separate confinement heterostrcture 450 nm true blue edgeemitting laser are presented by considering different injection current. At the temperature of 300 K, the threshold current of the laser is 11 mA. The peak material gain for the designed laser is obtained as 1106 cm-1 and further used for the analysis of the performance characteristics of the designed doubleheterostructure laser for the variation of injection current. The injection current can be applied to the device is at around 12 to 15 times of the threshold current. At the value of injection current 152 mA, the maximum output power of the laser is 256.4 mW, the maximum resonance frequency is 14.5 GHz and the corresponding modulation bandwidth is 25.3 GHz at the temperature of 300 K.

1.55 μm High Speed Partly Gain-Coupled DFB Lasers with Periodically Etched Strained-Layer Quantum Wells

1997 ◽  
Vol 08 (03) ◽  
pp. 475-494 ◽  
Author(s):  
Toshihiko Makino
Keyword(s):  
Quantum Wells ◽  
High Speed ◽  
Carrier Transport ◽  
Stop Band ◽  
Longitudinal Distribution ◽  
Modulation Bandwidth ◽  
Carrier Injection ◽  
Strained Layer ◽  
High Modulation ◽  
Dfb Laser

The high speed performance of partly gain-coupled (GC) DFB lasers consisting of periodically etched strained-layer quantum wells (QW's) is reviewed with comparisons to the equivalent index-coupled (IC) DFB lasers with the same active layers. It is shown that the GC DFB laser has a –3 dB modulation bandwidth of 22 GHz at 10 mW with a stable single mode oscillation at the longer side of the Bragg Stop-band due to in-phase gain coupling. A theoretical analysis is also presented based on the local-normal-mode transfer-matrix laser model which takes into account both the longitudinal distribution of laser parameters and carrier transport effects. The mechanism for high modulation bandwidth of the GC DFB laser is attributed to a higher differential gain due to a reduced carrier transport time which is provided by an effecient carrier injection from the longitudinal etched interface of the QW's.

scholarly journals High-speed 405-nm superluminescent diode (SLD) with 807-MHz modulation bandwidth

2016 ◽  
Vol 24 (18) ◽  
pp. 20281 ◽  
Author(s):  
Chao Shen ◽  
Changmin Lee ◽  
Tien Khee Ng ◽  
Shuji Nakamura ◽  
James S. Speck ◽  
...  
Keyword(s):  
High Speed ◽  
Modulation Bandwidth ◽  
Superluminescent Diode
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