scholarly journals An 8-20-GHz wide-band LNA design and the analysis of its input matching mechanism

2004 ◽  
Vol 14 (11) ◽  
pp. 528-530 ◽  
Author(s):  
R. Hu
Keyword(s):  
Wide Band ◽  
Input Matching ◽  
Matching Mechanism ◽  
Lna Design

Design of 3.1-10.6GHz CMOS LNA Based on Input Matching Technique of Common-Gate Topology

2013 ◽  
Vol 479-480 ◽  
pp. 1014-1017
Author(s):  
Yi Cheng Chang ◽  
Meng Ting Hsu ◽  
Yu Chang Hsieh
Keyword(s):  
Noise Figure ◽  
Supply Voltage ◽  
Average Power ◽  
Wide Band ◽  
Low Noise ◽  
Input Matching ◽  
Common Gate ◽  
Cmos Lna ◽  
Noise Amplifier ◽  
Is Design

In this study, three stage ultra-wide-band CMOS low-noise amplifier (LNA) is presented. The UWB LNA is design in 0.18μm TSMC CMOS technique. The LNA input and output return loss are both less than-10dB, and achieved 10dB of average power gain, the minimum noise figure is 6.55dB, IIP3 is about-9.5dBm. It consumes 11mW from a 1.0-V supply voltage.

Simultaneous noise and input matched ultra wide band LNA design

2007 ◽  
Vol 49 (9) ◽  
pp. 2275-2279 ◽  
Author(s):  
Yuna Shim ◽  
Chang-Wan Kim ◽  
Sang-Gug Lee
Keyword(s):  
Wide Band ◽  
Ultra Wide Band ◽  
Lna Design

A 1.8V wide-band LNA design in 0.18-µm triple-well CMOS

2012 ◽  
Author(s):  
Hyeonseok Hwang ◽  
Chan-Hui Jeong ◽  
Chankeun Kwon ◽  
Hoonki Kim ◽  
Youngmok Jeong ◽  
...  
Keyword(s):  
Wide Band ◽  
Lna Design

Multiband Multi-Standard LNA with CPW Transmission Line Inductor

2012 ◽  
pp. 48-68
Author(s):  
M. Ben Amor ◽  
M. Loulou ◽  
S. Quintanel ◽  
D. Pasquet
Keyword(s):  
Transmission Line ◽  
Frequency Band ◽  
Noise Figure ◽  
Characteristic Impedance ◽  
Wide Band ◽  
Input Output ◽  
Frequency Bands ◽  
Rf Receiver ◽  
Reflexion Coefficient ◽  
Lna Design

LNA is one very essential bloc in the RF receiver. Due to the growth of the standard evolution, this component must handle several frequency bands with the best performances. This chapter presents a wide band LNA design for IEEE802.16 standard with the CMOS 0.35µm technology. In this LNA, we use a CPW transmission line to design the inductive degeneration inductor of 0.38nH. This circuit has a S21 of 12dB, a noise figure less than 3dB and an input/output reflexion coefficient less than -10dB between 2 and 6GHz. The CPW line presents a characteristic impedance of 120O, an inductance of 0.38nH, a capacitance of few fF and a resistance less than 2O on the desired frequency band.

A FULLY INTEGRATED MULTIBAND CMOS 0.35 μM LNA FOR IEEE802.16 STANDARD

2013 ◽  
Vol 22 (02) ◽  
pp. 1250088 ◽  
Author(s):  
MERIAM BEN AMOR ◽  
MOURAD LOULOU ◽  
SEBASTIEN QUINTANEL ◽  
DANIEL PASQUET
Keyword(s):  
Noise Figure ◽  
Supply Voltage ◽  
Wide Band ◽  
Low Noise ◽  
Cmos Process ◽  
Frequency Range ◽  
Fully Integrated ◽  
Input Matching ◽  
Noise Amplifier ◽  
Chebyshev Filter

In this paper we present the design of a fully integrated low noise amplifier for WiMAX standard with AMS 0.35 μm CMOS process. This LNA is designed to cover the frequency range for licensed and unlicensed bands of the WiMAX 2.3–5.9 GHz. The proposed amplifier achieves a wide band input and output matching with S11 and S22 lower than -10 dB, a flat gain of 12 dB and a noise figure around 3.5 dB for the entire band and from the upper to the higher frequencies. The presented wide band LNA employs a Chebyshev filter for input matching and an inductive shunt feedback for output matching with a bias current of 15 mA and a supply voltage of 2.5 V.

D-mode pHEMT 0.5 um Process Characterization to Wide-Band LNA Design

2019 ◽  
Author(s):  
D. I. Sotskov ◽  
N. A. Usachev ◽  
V. V. Elesin ◽  
A. G. Kuznetsov ◽  
K. M. Amburkin ◽  
...  
Keyword(s):  
Wide Band ◽  
Process Characterization ◽  
Lna Design
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