A novel silicon-based packaging platform with the electroplated-based reflector and the electrode- guided interconnections is developed for the packaging component of a high-luminosity and high-efficiency multi-chip light-emitting diode (LED) module, which is patterned on a new type of insulating layer that consists of nanoporous anodized aluminum oxide (AAO) layer and plasma- enhanced chemical vapor deposition (PECVD) deposited silicon dioxide (SiO2) on a doped silicon substrate. The reflector and the electrical interconnections are successfully fabricated by using the electroplating method in the same body. In order to obtain the benefits of high efficiency LED modules, the requirements concerning thermal management and photomechanical layout have to be met. In this paper, we will discuss a novel fabrication method in LED module packaging platform, and then describe the thin layer of electroplated Cu/Ni/Au in order to reduce thermal resistance and to increase thermal diffusion efficiency. The heat generated by the LED chips is dissipated directly to the silicon body through the metal-plated platform, and truly excellent heat dissipation characteristics are observed. We demonstrate 987 lm 8 W-level cool-white light (5000 K, 16 V, 110 lm/W, CRI = 77) emission for 570 µm × 230 µm-chip LEDs at 600 mA operation.
