Low temperature ion beam sputter deposition of amorphous silicon carbide for wafer-level vacuum sealing

Author(s):  
Debbie G. Jones ◽  
Robert G. Azevedo ◽  
Matthew W. Chan ◽  
Albert P. Pisano ◽  
Muthu B. J. Wijesundara
Author(s):  
P. Musumeci ◽  
L. Calcagno ◽  
A. Makhtari ◽  
P. Baeri ◽  
G. Compagnini ◽  
...  

1992 ◽  
Vol 242 ◽  
Author(s):  
Sing-Pin Tay ◽  
J. P. Ellul ◽  
Susan B. Hewitt ◽  
N. G. Tarr ◽  
A. R. Boothroyd

ABSTRACTA low temperature process of silicon carbide deposition using the pyrolysis of di-tert-butylsilane has been explored for formation of emitter structures in silicon heterojunction bipolar transistors. Near stoichiometric amorphous silicon carbide films were achieved at 775°C. Doping and annealing of these films resulted in resistivity as low as 0.02 ohm-cm.


Vacuum ◽  
2005 ◽  
Vol 79 (1-2) ◽  
pp. 100-105 ◽  
Author(s):  
T. Tsvetkova ◽  
S. Takahashi ◽  
A. Zayats ◽  
P. Dawson ◽  
R. Turner ◽  
...  

1986 ◽  
Vol 139 (3) ◽  
pp. 275-285 ◽  
Author(s):  
B. Goranchev ◽  
K. Reichelt ◽  
J. Chevallier ◽  
P. Hornshoj ◽  
H. Dimigen ◽  
...  

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