Concurrent reactive ion etching employing micromachined ionic liquid ion source array

2014 ◽  
Author(s):  
Ryo Yoshida ◽  
Motoaki Hara ◽  
Hiroyuki Oguchi ◽  
Tatsuya Suzuki ◽  
Hiroki Kuwano
Keyword(s):  
Ionic Liquid ◽  
Reactive Ion Etching ◽  
Ion Source ◽  
Ion Etching ◽  
Source Array

The Mechanisms of Reactive Ion Etching Of SiOx (x≤2) with Electron Cyclotron Resonance and Kaufman Ion Sources

1991 ◽  
Vol 223 ◽  
Author(s):  
R. A. Kant ◽  
C. R. Eddy ◽  
B. D. Sartwell
Keyword(s):  
Cyclotron Resonance ◽  
Electron Cyclotron Resonance ◽  
Reactive Ion Etching ◽  
Ion Source ◽  
Electron Cyclotron ◽  
Optimum Pressure ◽  
Ion Etching ◽  
Ion Energies ◽  
Microwave Ion Source

ABSTRACTThe dominant factors governing reactive ion etching of Si, SiO, and SiO2 thin films during bombardment with energetic Ar ions in a Cl atmosphere were investigated. Etch rates were determined in-situ by measuring weight loss as a function of ion fluence for films deposited on a quartz micro-balance. Measurements were made as a function of ion energy and Cl pressure using a Kaufman gun for ion energies from 300 to 1500 eV and an electron cyclotron resonance microwave ion source for ion energies from 50 to 600 eV and for Cl pressures ranging from 0.006 to 0.05 Pa. Results were compared to sputtering in Ar alone. The results indicated that the presence of the C1 enhanced the etch rate for all three materials, with the degree of enhancement being inversely proportional to the oxygen content of the film. It was also discovered that there was an optimum pressure for enhancement of the etching and that at the highest pressures, the etching could actually be suppressed. These results are discussed in terms of physisorbed gas layers, the thickness of which depends on the balance between the flux of energetic particles and the gas flux.

Magnetron Reactive Ion Etching of GaAs and AIGaAs in CH4/H2/Ar Plasmas.

1996 ◽  
Author(s):  
George F. McLane ◽  
Paul Cooke ◽  
Robert P. Moerkirk
Keyword(s):  
Reactive Ion Etching ◽  
Ion Etching

Modification of the n-Surface Profile of AlGaInN LEDs by Changing the Gas-Mixture Composition During Reactive Ion Etching

2020 ◽  
Vol 54 (6) ◽  
pp. 672-676
Author(s):  
L. K. Markov ◽  
I. P. Smirnova ◽  
M. V. Kukushkin ◽  
A. S. Pavluchenko
Keyword(s):  
Reactive Ion Etching ◽  
Surface Profile ◽  
Mixture Composition ◽  
Gas Mixture ◽  
Ion Etching

Reactive ion etching of III-V compounds using C2H6/H2

1988 ◽  
Vol 24 (13) ◽  
pp. 798 ◽  
Author(s):  
T. Matsui ◽  
H. Sugimoto ◽  
T. Ohishi ◽  
H. Ogata
Keyword(s):  
Reactive Ion Etching ◽  
Ion Etching

GaInAsP/InP mass transport laser monolithically integrated with photodetector using reactive ion etching

1989 ◽  
Vol 25 (15) ◽  
pp. 954 ◽  
Author(s):  
T. Matsui ◽  
H. Sugimoto ◽  
K. Ohtsuka ◽  
Y. Abe ◽  
H. Ogata
Keyword(s):  
Mass Transport ◽  
Reactive Ion Etching ◽  
Ion Etching ◽  
Monolithically Integrated

scholarly journals An Assessment of Surface Treatments for Adhesion of Polyimide Thin Films

Polymers ◽  
2021 ◽  
Vol 13 (12) ◽  
pp. 1955
Author(s):  
Marco Cen-Puc ◽  
Andreas Schander ◽  
Minerva G. Vargas Gleason ◽  
Walter Lang
Keyword(s):  
Flexible Electronics ◽  
Oxygen Plasma ◽  
Reactive Ion Etching ◽  
Peel Test ◽  
Scratch Test ◽  
Peel Strength ◽  
Surface Treatments ◽  
Oxygen Plasma Treatment ◽  
Polyimide Films ◽  
Ion Etching

Polyimide films are currently of great interest for the development of flexible electronics and sensors. In order to ensure a proper integration with other materials and PI itself, some sort of surface modification is required. In this work, microwave oxygen plasma, reactive ion etching oxygen plasma, combination of KOH and HCl solutions, and polyethylenimine solution were used as surface treatments of PI films. Treatments were compared to find the best method to promote the adhesion between two polyimide films. The first selection of the treatment conditions for each method was based on changes in the contact angle with deionized water. Afterward, further qualitative (scratch test) and a quantitative adhesion assessment (peel test) were performed. Both scratch test and peel strength indicated that oxygen plasma treatment using reactive ion etching equipment is the most promising approach for promoting the adhesion between polyimide films.

scholarly journals Dry Etching Performance and Gas-Phase Parameters of C6F12O + Ar Plasma in Comparison with CF4 + Ar

Materials ◽  
2021 ◽  
Vol 14 (7) ◽  
pp. 1595
Author(s):  
Nomin Lim ◽  
Yeon Sik Choi ◽  
Alexander Efremov ◽  
Kwang-Ho Kwon
Keyword(s):  
Gas Phase ◽  
Photoelectron Spectroscopy ◽  
Reactive Ion Etching ◽  
Research Work ◽  
Optical Emission ◽  
Plasma Parameters ◽  
Ion Etching ◽  
Ar Plasma ◽  
Ar Gas ◽  
Etching Selectivity

This research work deals with the comparative study of C6F12O + Ar and CF4 + Ar gas chemistries in respect to Si and SiO2 reactive-ion etching processes in a low power regime. Despite uncertain applicability of C6F12O as the fluorine-containing etchant gas, it is interesting because of the liquid (at room temperature) nature and weaker environmental impact (lower global warming potential). The combination of several experimental techniques (double Langmuir probe, optical emission spectroscopy, X-ray photoelectron spectroscopy) allowed one (a) to compare performances of given gas systems in respect to the reactive-ion etching of Si and SiO2; and (b) to associate the features of corresponding etching kinetics with those for gas-phase plasma parameters. It was found that both gas systems exhibit (a) similar changes in ion energy flux and F atom flux with variations on input RF power and gas pressure; (b) quite close polymerization abilities; and (c) identical behaviors of Si and SiO2 etching rates, as determined by the neutral-flux-limited regime of ion-assisted chemical reaction. Principal features of C6F12O + Ar plasma are only lower absolute etching rates (mainly due to the lower density and flux of F atoms) as well as some limitations in SiO2/Si etching selectivity.

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